Low-loss and Broadband Complementary Dual-Output Electro-Optic Modulator Based on Thin-Film Lithium Niobate

Tingan Li,Chenglin Shang,Xuanhao Wang,Weiqiang Lue,Zhiyao Zhang,Cheng Zeng,Yong Liu,Jinsong Xia
DOI: https://doi.org/10.3788/col202422.092201
IF: 2.56
2024-01-01
Chinese Optics Letters
Abstract:Broadband, low-drive voltage electro-optic modulators are crucial optoelectronic components in the new-generation microwave photonic links and broadband optical interconnect network applications. In this paper, we fabricate a low-loss thinfilm lithium niobate complementary dual-output electro-optic modulator chip with a 3 dB electro-optic bandwidth of 59 GHz and a half-wave voltage (V pi) of 2.5 V. The insert-loss of the packaged modulator is 4.2 dB after coupling with polarizationmaintaining fiber. The complementary dual-output modulator also shows a common-mode rejection ratio of 18 dB and a signal enhancement of 6.2 dB when adapted in microwave photonic links, comparable to commercial bulk lithium niobate devices.
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