Abstract:A low voltage, wide bandwidth compact electro-optic modulator is a key building block in the realization of tomorrow's communication and networking needs. Recent advances in the fabrication and application of thin-film lithium niobate, and its integration with photonic integrated circuits based in silicon make it an ideal platform for such a device. In this work, a high-extinction dual-output folded electro-optic Mach Zehnder modulator in the silicon nitride and thin-film lithium niobate material system is presented. This modulator has an interaction region length of 11 mm and a physical length of 7.8 mm. The device demonstrates a fiber-to-fiber loss of roughly 12 dB using on-chip fiber couplers and DC half wave voltage (V$\pi$) of less than 3.0 V, or a modulation efficiency (V$\pi\cdot$L) of 3.3 V$\cdot$cm. The device shows a 3 dB bandwidth of roughly 30 GHz. Notably, the device demonstrates a power extinction ratio over 45 dB at each output port without the use of cascaded directional couplers or additional control circuitry; roughly 31 times better than previously reported devices. Paired with a balanced photo-diode receiver, this modulator can be used in various photonic communication systems. Such a detecting scheme is compatible with complex modulation formats such as differential phase shift keying and differential quadrature phase shift keying, where a dual-output, ultra-high extinction device is fundamentally paramount to low-noise operation of the system.

High-Linearity Dual-Parallel Mach–Zehnder Modulators in Thin-Film Lithium Niobate

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

High-efficiency Thin-Film Lithium Niobate Modulator with Highly Confined Optical Modes

Linearization of Two Cascaded Intensity-Modulator-based Analog Photonic Link

High-Frequency and High-Linearity Lithium Niobate Electro-optic Modulator

High Linearity Silicon Modulator Capable of Actively Compensating Input Distortion.

Silicon Dual-Series Mach-Zehnder Modulator with High Linearity

Linearity Comparison of Silicon Carrier-Depletion-Based Single, Dual-Parallel, and Dual-Series Mach–Zehnder Modulators

110 GHz, 110 mW hybrid silicon-lithium niobate Mach-Zehnder modulator

Highly linear silicon Mach-Zehnder modulators with optimized phase-shifter

Broadband Meandered Thin-Film Lithium Niobate Modulator with Ultra-Low Half-Wave Voltage

Ultra-high extinction dual-output thin-film lithium niobate intensity modulator

High-Performance Thin-Film Lithium Niobate Mach-Zehnder Modulator on 8-Inch Silicon Substrate

Monolithic Thin Film Lithium Niobate Electro-Optic Modulator with over 110 GHz Bandwidth

High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

Ultra-high Efficiency Electro-optic Modulator on Thin-film Lithium Niobate

High-efficiency Electro-Optic Modulators in Lithium Niobate on Insulator

High Performance Thin-Film Lithium Niobate Modulator on a Silicon Substrate Using Periodic Capacitively Loaded Traveling-Wave Electrode

High-speed mid-infrared Mach–Zehnder electro-optical modulators in lithium niobate thin film on sapphire

High-performance Coherent Optical Modulators based on Thin-film Lithium Niobate Platform

110-GHz bandwidth integrated lithium niobate modulator without direct lithium niobate etching