Abstract:An atomically thick AlN layer is typically used as the strain compensation layer (SCL) for InGaN-based-red light-emitting diodes (LEDs). However, its impacts beyond strain control have not been reported, despite its drastically different electronic properties. In this Letter, we describe the fabrication and characterization of InGaN-based red LEDs with a wavelength of 628 nm. A 1-nm AlN layer was inserted between the InGaN quantum well (QW) and the GaN quantum barrier (QB) as the SCL. The output power of the fabricated red LED is greater than 1 mW at 100 mA current, and its peak on-wafer wall plug efficiency (WPE) is approximately 0.3%. Based on the fabricated device, we then used numerical simulation to systematically study the effect of the AlN SCL on the LED emission wavelength and operating voltage. The results show that the AlN SCL enhances the quantum confinement and modulates the polarization charges, modifying the device band bending and the subband energy level in the InGaN QW. Thus, the insertion of the SCL considerably affects the emission wavelength, and the effect on the emission wavelength varies with the SCL thickness and the Ga content introduced into the SCL. In addition, the AlN SCL in this work reduces the LED operating voltage by modulating the polarization electric field and energy band, facilitating carrier transport. This implies that heterojunction polarization and band engineering is an approach that can be extended to optimize the LED operating voltage. We believe our study better identifies the role of the AlN SCL in InGaN-based red LEDs, promoting their development and commercialization.

Influence of Well Position on the Electroluminescence Characteristics of InGaN/GaN Single Quantum Well Red Light-Emitting Diodes

Influence of in Doping in GaN Barriers on Luminescence Properties of InGaN/GaN Multiple Quantum Well LEDs

Effect of Localization States on the Electroluminescence Spectral Width of Blue–green Light Emitting InGaN/GaN Multiple Quantum Wells

Understanding the Luminescence Characteristics of Ultraviolet InGaN/AlGaN Multiple Quantum Wells with Different in Gradients

Effect of P–n Junction Location on Characteristics of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

The Influence of InGaN Interlayer on the Performance of InGaN/GaN Quantum-Well-Based LEDs at High Injections

Evaluation Of Polarization Field In Ingan/Gan Multiple Quantum Well Structures By Using Electroluminescence Spectra Shift

Effects of Photogenerated Carriers in GaN Layers on the Photoluminescence Characteristics of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells

Impact of Localization on the Optical Properties of InGaN-Based Red Light-Emitting Diodes Grown on a Silicon Substrate

Influence of Polarization Effect on Optoelectronic Properties of InGaN/GaN Multiple Quantum Well

Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths

A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells

Effect of Si Doping in Barriers of Ingan/Gan Multiple Quantum Wells on the Performance of Green Light-Emitting Diodes

An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells

Improved carrier transport and photoelectric properties of InGaN/GaN multiple quantum wells with wider well and narrower barrier

Anomalous Electroluminescent Blue-Shift Behavior Induced by Well Widths Variance and Localization Effect in InGaN/GaN Multi-Quantum Wells.

Electroluminescence Property Improvement by Adjusting Quantum Wells’ Position Relative to P-Doped Region in InGaN/GaN Multiple-Quantum-well Light Emitting Diodes

Investigation of Surface Plasmon Coupling with the Quantum Well for Reducing Efficiency Droop in GaN-based Light Emitting Diodes

Effect of the AlN strain compensation layer on InGaN quantum well red-light-emitting diodes beyond epitaxy

Influence of well width and barrier thickness on optoelectronic properties of InGaN/GaN multiple quantum well

Photoluminescence of InGaN-based Red Multiple Quantum Wells.