Influence of well width and barrier thickness on optoelectronic properties of InGaN/GaN multiple quantum well

Huimin Lu,Genxiang Chen

DOI: https://doi.org/10.3969/j.issn.1007-2276.2011.04.024

2011-01-01

Abstract:The band structure and spontaneous emission spectra of the InGaN/GaN multiple quantum well structures with different well width and barrier thickness were systematically analyzed by using a detailed theoretical model based on the k·p theory. The spontaneous emission spectra of different quantum well structures were calculated. Numerical results show that the well width and barrier thickness have a great influence on the electronic and optical properties of InGaN/GaN multiple quantum well structures. With the increase of well width and barrier thickness, the emission peak wavelength shows red shift and emission intensity reduces for the InGaN/GaN multiple quantum well structures. Polarization-induced electrostatic fields in InGaN/GaN multiple quantum well structures decrease the band gap and separate the distribution of electron and hole. Furthermore, the polarization enhances the influence of well width and barrier thickness on the optoelectronic properties of InGaN/GaN multiple quantum well structures.