Abstract:A novel effective reliability improvement technology for gallium nitride (GaN) devices and passivation dielectric stack consisting of a plasma-enhanced atomic layer deposition (PEALD) grown aluminum nitride (AlN, 5 nm) and a low-pressure chemical vapor deposition (LPCVD) grown silicon nitride (SiNx, 30 nm) in normally- OFF GaN metal–insulator–semiconductor field-effect transistors (MIS-FETs) is proposed. This reliability improvement technique features an in situ H2 (15%)/N2 (85%) plasma pretreatment in a PEALD system before the deposition of PEALD AlN. The quality of the AlN/(Al)GaN interface, threshold voltage instability, and dynamic ${R}_{\text {on}}$ in the normally- OFF GaN MIS-FETs with and without the in situ H2 (15%)/N2 (85%) plasma pretreatment was investigated using various methods. The equivalent parallel conductance method, high-frequency capacitance-voltage, time-of-fly (TOF) stress/measures, and quasi-static ${I}_{\text {D}}$ – ${V}_{\text {D}}$ methods were used in the experimental studies. The results showed that the in situ H2 (15%)/N2 (85%) plasma pretreatment technique is effective in improving the quality of the AlN/GaN interface. The devices with the in situ H2 (15%)/N2 (85%) plasma pretreatment had improved ${V}_{\text {th}}$ stability and lower ${R}_{\text {on}, {dynamic}}/{R}_{\text {on}, {static}}$ ratio, which was due to the reduced interface trap densities between the AlN/GaN interface and the improved mobility of 2-D electron gas (2DEG). The time-dependent dielectric breakdown (TDDB) and Weibull performance further verified that the proposed in situ H2 (15%)/N2 (85%) plasma pretreatment techniques were reliable in improving the reliability of GaN power devices.

The Effect of SiN X Film for H Plasma Implantation in P-Gan/algan/gan High Electron Mobility Transistors

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Enhanced Device Performance of GaN High Electron Mobility Transistors with in Situ Crystalline SiN Cap Layer

Characterization of Gate Leakage and Reliability of Normally-OFF GaN MOSFET with LPCVD-SiN<sub><i>x</i></sub>/PEALD-AlN Dual Gate Dielectric and <i>In-Situ</i> H<sub>2</sub>(15%)/N<sub>2</sub>(85%) Plasma Pretreatment

Effects of SiNxon Two-Dimensional Electron Gas and Current Collapse of AlGaN/GaN High Electron Mobility Transistors

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx As a Gate Dielectric

Effects of SiON/III-nitride Interface Properties on Device Performances of GaN-based Power Field-Effect Transistors

Improved Performance of Fully-Recessed Normally-off LPCVD SiN/GaN MISFET Using N2O Plasma Pretreatment

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Investigation of the Trap States and V Th Instability in Normally-Off GaN MIS-FETs with LPCVD SiNx/PEALD AlN Gate Dielectric Stack and in Situ H2/N2 Plasma Pretreatment

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si 3 N 4 Bilayer Passivation

O2 Plasma Alternately Treated ALD-Al2O3 As Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs

Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs

Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer

Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment

Effect of X-Ray Irradiation on Threshold Voltage of AlGaN/GaN HEMTs with pGaN and MIS Gate

Investigating the effect of O2 plasma treatment on the operational characteristics of schottky-gate AlGaN/GaN HEMT

Effect of Double Insulators on the Performance Improvement of 3-MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs

Normally-off GaON/p-GaN gate HEMTs with using selective plasma oxidation: from structural characterization, performance improvement to physical mechanism