Abstract:Here, first-principles calculations were employed to study the properties of the W/Y2O3 interface and its effect on H dissolution and migration. Two W/Y2O3 interface structures were selected to investigate the influence of terminal structures and stacking sequences on the interface properties. The Y4O6-W (bridge) and O-W type A terminal interface exhibited the lowest interface energy at the W (110)/Y2O3 (222) interface with the orientation of W (1-10) (2 root 2x5)/Y2O3 (2-1-1) (root 3/2x root 2) and at the W (200)/Y2O3 (400) interface with the orientation of W (001) (3 x 3)/Y2O3 (001) (1 x 1). The work of adhesion of the O-W type terminal interface is larger than those of the Y-W type and YnOm-W terminal interfaces, indicating that the O-W type A terminal interface has the most stable structure. Atomic-bonding analysis confirmed that the W-O bond plays an essential role in stabilizing the interface structure, and the stability improves as the density of the W-O bonds at the interface increases. These conclusions are further verified by charge-density difference calculations, which revealed that strong ionic bonds are formed between the W and O atoms at the W/Y2O3 interface. With regard to the H behavior at the W (200)/Y2O3 (400) interface, the segregation energy confirmed that the interface plays an important role in the segregation of H. The migration energy barrier of interstitial H along the interface is greater than that in the bulk. This means that the interface retains a significant number of injected H atoms, leading to an increase in the local concentration of H atoms at the interface. These results provide theoretical insights into the profound understanding of the interface properties and its effect on H behavior in Y2O3-dispersion-strengthened W.

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