Abstract:Copper (Cu) has been widely used as interconnect materials in semiconductor industry, due to its advantages of high electrical, thermal conductivities, good electro-migration resistance and low cost. Since Cu is very reactive, contamination like physical diffusion from Cu to silicon (Si) and the chemical combination between Cu and Si is commonly observed and detrimental for Si semiconductor devices. Besides experimental study of the interaction between Cu and Si at macro scale, the physical diffusion and chemical combination also need to be understood at atomic level. Based on density functional theory (DFT), a crystal structure of Cu/Si heterojunction has been established to study the Cu/Si interfacial diffusion mechanism, including the diffusibility of vacancy and interstitial diffusion. No energy barrier exists when vacancy located at the top site, and diffusion from outside to bridge site is also possible by overcoming a relative low energy barrier. The occurrence of interstitial diffusion is also proved, but the energy barrier is higher than that of vacancy diffusion. The deeper of interstitial diffusion, more energy is required to overcome the increased energy barrier. In terms of first-principles study of chemical combination, complexes of Cu and Si have been structuralized in trigonal, hexagonal and tetragonal crystals. Stability of the crystal structures has been investigated from the aspect of mechanical and lattice stability. Tetragonal Cu3Si is proved to be the only crystal structure with both mechanical and lattice stabilities. The elastic constants, electronic structure and thermodynamical properties of the stable Cu3Si are also revealed. The results indicate the tetragonal Cu3Si exhibits metallic behaviors with good thermodynamical properties. The current study could provide meaningful insights on the inhabitation of Cu contamination and performance improvement.

First-principles investigation of hydrogen interaction with Cu/WC interface

First principle study of hydrogen behavior in hexagonal tungsten carbide

Effect of hydrogen-helium interaction on their segregation and desorption at the W/HfC interfaces by first-principles calculations

Solution and solubility of H atoms at the W/Cu interface.

Fundamental Effects of Hydrogen on Cohesion Properties of Cu/W Interfaces

First-principles Calculations on Interface Stability and Migration of H and He in W-ZrC Interfaces

Influence of Cu/W interfacial structure on the resistance against harmful helium atoms: A mechanism analysis

First-principles study of hydrogen in perfect tungsten crystal

Investigation on the WC/Cu interfacial bonding properties: First-principles prediction and experimental verification

Hydrogen Behaviors at the Near-Surface Region of Tungsten: A First-Principles Study

Hydrogen Diffusion on the Tin-Covered Tungsten Surface: A First-Principles Study

Computationally Predicted Fundamental Behaviors of Embedded Hydrogen at TiC/W Interfaces

Fundamental Properties of Hydrogen at PdCu–Mo2C Interfaces from First Principles Calculations

Hydrogen trapping, desorption and clustering in heterophase interfaces of W-ZrC alloy

High-throughput Computing for Hydrogen Transport Properties in Ε-Zrh2

First-principles Study of Copper Contamination in Silicon Semiconductor

Interfacial Reaction of W/Cu Examined by an N-Body Potential Through Molecular Dynamics Simulations

The effects of hydrogen on the bonding properties of SiC/Cu interface via first-principles calculations

First-principles Calculation on the Structure Stability, Hydrogen Trapping Behaviour, and Adhesion Properties of the Zr(0001) ZrC(100) Interface

First-principles Calculations of Hydrogen Solution and Diffusion in Tungsten: Temperature and Defect-Trapping Effects

First Principles Study of the Interfaces Between Tungsten and Transition Metal Carbides: Structures, Energetic and Light Elements Trapping