The Quantizable Contribution of Epdd, Sblc, and Iblc Effects to Colossal Permittivity in La-Doped Batio3 Ceramic

Yingzhi Meng,Kang Liu,Xiuyun Lei,Chunchun Li,Zhao Yang,Dawei Wang,Qi Zhang,Hongfang Zhang,Shiguang Yan,Jun Chen,Laijun Liu

DOI: https://doi.org/10.2139/ssrn.4110712

2022-01-01

Abstract:Colossal permittivity (CP) (> 10 5 ) and low loss (< 0.012) and high temperature stability with Δ ε '/ ε ' 25°C < 15% (Δ ε ' = ε '- ε ' 25°C ) in the temperature range of 25 to 370 °C were simultaneously achieved in La-doped BaTiO 3 ceramics. The existence of [[EQUATION]] and [[EQUATION]] lattice defects was approved by XPS and EPR. An extremely strong electron-pinned defect-dipole (EPDD) effect induced by the lattice defects coupling gives rise to the colossal permittivity response and low dielectric loss due to highly localized free carriers. The permittivity and complex impedance spectra versus frequency under different bias voltages demonstrate the existence of the surface barrier layer capacitance (SBLC) effect and the internal barrier layer capacitance (IBLC) effect. Interestingly, three Cole-Cole formulas and the universal dielectric response law (UDR) were employed to clearly distinguish the contributions of EPDD, SBLC, and IBLC effects to the CP response.