Abstract:The strong piezoelectric field present in InGaN/GaN heterostructure quantum wells severely reduces the light emission efficiency of multiple quantum well (MQW) structures. To address this issue, a strain modulation interlayer is commonly used to mitigate the piezoelectric polarization field and improve the luminescence performance of the devices. To investigate the impact and mechanism of strain modulation in the InGaN/GaN superlattice (SL), epitaxial wafers were fabricated with an n-type InGaN/GaN SL interlayer sample, along with a corresponding control sample. By measuring the temperature-dependent photoluminescence (PL) spectra of the epitaxial wafers, experimental results show that the introduction of an SL interlayer leads to a shorter emission wavelength and an enhanced internal quantum efficiency. As the temperature increases, a blue shift of the PL peak is observed. However, for the sample with an SL interlayer, the blue shift of the PL peak with temperature is relatively small. Electroluminescence (EL) experiments indicate that the introduction of an SL interlayer significantly increases the integrated intensity of the EL peak and reduces its full width at half maximum. These phenomena collectively suggest that the incorporation of a superlattice interlayer can partially suppress the quantum-confined Stark effect (QCSE) that affects the light emission efficiency. Theoretical calculations demonstrated that the introduction of a superlattice strain layer before the growth of the multiple quantum well active region can weaken the polarization-induced built-in electric field, reduce the tilt of the energy bands in the multiple quantum well active region, increase the overlap of electron and hole wave functions, enhance the emission probability, shorten the radiative recombination lifetime, and promote competition between radiative and non-radiative recombination, thereby achieving higher recombination efficiency and improved light emission intensity. This study provides experimental and theoretical evidence that the strain modulation SL interlayer can effectively improve the device performance and offer guidance for optimizing the structural design of devices.

Influence of in volatilization on photoluminescence in InGaN/GaN multiple quantum wells

Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

Temperature Dependence of Photoluminescence Spectra for Green Light Emission from InGaN/GaN Multiple Wells.

Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaN

Photoluminescence Properties of Blue and Green Multiple InGaN/GaN Quantum Wells

Effect of High Temperature and Interface Treatments on Photoluminescence from InGaN/GaN Multiple Quantum Wells with Green Light Emissions

Time-resolved and Temperature-Varied Photoluminescence Studies of InGaN/GaN Multiple Quantum Well Structures

Influence of InGaN Growth Rate on the Localization States and Optical Properties of InGaN/GaN Multiple Quantum Wells

Photoluminescence of Green InGaN/GaN MQWs Grown on Pre-Wells*

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

Investigation of the influence of InGaN underlying layers on the optical properties of InGaN quantum well structures

Structural and Optical Properties of InGaN/GaN Multiple Quantum Wells Structure for Ultraviolet Emission

Localization Effect in Green Light Emitting Ingan/Gan Multiple Quantum Wells with Varying Well Thickness

Effect of Localization States on the Electroluminescence Spectral Width of Blue–green Light Emitting InGaN/GaN Multiple Quantum Wells

Thermionic emission of carriers in InGaN/(In)GaN multiple quantum wells

Study on the strain modulation effect of superlattice interlayer on InGaN/GaN multiple quantum well

Improvement of Structural and Luminescence Properties in InGaN/GaN Multiple Quantum Wells by Symmetrical Thin Low Temperature-Gan Layers

Investigation of Photoluminescence and Photoreflectance in MBE-Grown GaInNAs/GaAs QWs

Optical and Spatial Resolved Cathodoluminescence Study of Phase Separation in Green InGaN Sandwiched Structure Grown on GaN Nanorods by MOCVD

Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells

Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells