Intrinsic Trapping and Recombination Dynamics in Low‐Dimensional Bismuth Sulfide Nanocrystals

Rui Cao,Peng Xiao,Weitao Lian,Lijian Zhang,Yan Wang,Changfei Zhu,Tao Chen
DOI: https://doi.org/10.1002/admi.202200219
IF: 5.4
2022-01-01
Advanced Materials Interfaces
Abstract:Bismuth sulfide (Bi2S3) possesses bandgap of 1.30-1.45 eV, perfectly suitable for light-harvesting materials in solar cells. Carrier dynamics in the Bi2S3 absorber material are determinant for energy conversion performance of solar cells, yet the carrier dynamics and associated recombination mechanism are rarely studied. Taking advantage of spectroscopic study on Bi2S3 nanocrystals, here new findings are uncovered inherent from the unique crystal structure that causes the energy loss in Bi2S3 materials. One is the trap state emission at near-infrared region, the other is the ultrafast intrinsic trapping in picosecond scale without saturation at 10(19) cm(-3) carrier density and various decay rates by adjusting excitation fluence. These observations indicate that photoinduced carriers are likely to be intrinsically trapped due to lattice distortion and display different recombination pathways. This study provides fundamental understanding on the detailed carriers dynamics of Bi2S3 nanocrystals and new insights into the optimization of Bi2S3-based photovoltaic devices.
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