Abstract:By combining the electron-phonon coupling effect and the static coupling formalism, we calculate, through the first-principles methods, the carrier capture cross sections of the three possible nonradiative recombination center (NRRC) defects in Cu2ZnSnS4. These values are currently unavailable but critical for understanding the limiting factors of the minority carrier lifetime and simulating the photovoltaic devices. We show that the cross sections for Sn-Zn(2+) capturing one electron (a (+2/+1) transition) and for [Cu-Zn-Sn-Zn](+) capturing one electron (a (+1/0) transition) are both very large, whereas for Sn-Zn(+) capturing one electron (a (+1/0) transition) is much smaller by several orders of magnitude. The minority carrier lifetime will be limited to below 1 ns if the concentrations of Sn-Zn(2+) and [Cu-Zn-Sn-Zn](+) are higher than 10(15) cm(-3), so they are effective NRRCs, whereas the lifetime can be as long as 10 mu s with the same concentration of Sn-Zn(+), so Sn-Zn(+) is a noneffective NRRC. The phonon mode analysis shows that the cross section is strongly correlated with the vibration mode of Sn-S bonds around the defects and its coupling with the localized wavefunction on the defect state. Sn-Zn(2+) and [Cu-Zn-Sn-Zn](+) have a short and strong Sn-S bond with a high-frequency vibration mode, and these two defects undergo a large structural distortion after capturing an electron, which decreases the barrier for carrier capture and thus produces a large cross section. In contrast, Sn-Zn(+) has a softer Sn-S vibration mode and thus much higher barrier for electron capture. Our calculations not only identify two effective NRRCs, which provide the mechanism behind why the Cu-poor, Zn-rich, Sn-poor growth condition, were widely adopted for fabricating high-efficiency Cu2ZnSnS4 solar cells but also show that a very large difference can exist in the carrier capture cross sections for the same defect in different charge states (Sn-Zn(2+) vs Sn-Zn(+)). We propose that the deep-level defects may have large carrier capture cross sections if they are surrounded by strong bonds and undergo considerable structural relaxations after capturing a carrier, which can be used as an empirical criterion for the quick identification of effective NRRCs.

Elucidating the Influence of Sulfur Vacancies on Nonradiative Recombination Dynamics in Cu2ZnSnS4 Solar Absorbers.

The Examination of Stable Charge States of Vacancies in Cu2ZnSnS4

Blocking Recombination Centers by Controlling the Charge Density of a Sulfur Vacancy in Antimony Trisulfide.

The Suppression of Cu-related Charge Localized Defects in Cu2ZnSnS4 Thin Film Solar Cells

Elucidating Structural Disorder and the Effects of Cu Vacancies on the Electronic Properties of Cu2ZnSnS4

Effective and Noneffective Recombination Center Defects in Cu2ZnSnS4: Significant Difference in Carrier Capture Cross Sections

Crystal Structure and Defect Reactions in the Kesterite Solar Cell Absorber Cu[sub 2]znsns[sub 4] (CZTS): Theoretical Insights

Self-assembled Nanometer-Scale ZnS Structure at the CZTS/ZnCdS Heterointerface for High-Efficiency Wide Band Gap Cu2ZnSnS4 Solar Cells

Defect-assisted nonradiative recombination in Cu 2 ZnSn Se 4 : A comparative study with Cu 2 ZnSn S 4

Defect-assisted Nonradiative Recombination in Cu2ZnSnSe4 : A Comparative Study with Cu2ZnSnS

Nanoscale Microstructure and Chemistry of Cu2znsns4/Cds Interface in Kesterite Cu2znsns4 Solar Cells

Limitation factors for the performance of kesterite Cu2ZnSnS4 thin film solar cells studied by defect characterization

Defect-Mediated Electron-Hole Separation in One-Unit-Cell Znin2s4 Layers for Boosted Solar-Driven Co2 Reduction

Intrinsic Point Defects and Complexes in the Quaternary Kesterite Semiconductorcu2znsns4

Mixed Sulfur/Selenium Anions Weaken Electron-Vibrational Interaction in Cu 2 ZnSn(S,Se) 4 Photoabsorber

Lone-pair effect on carrier capture in Cu$_2$ZnSnS$_4$ solar cells

The role of Sb in solar cell material Cu2ZnSnS4

Positive Role of Inhibiting CZTSSe Decomposition on Intrinsic Defects and Interface Recombination of 12.03% Efficient Kesterite Solar Cells

Non-uniform Distribution of Sulfur Vapor and Its Influence on Cu2ZnSnS4 Thin Film Solar Cells

Interface Recombination of Cu 2 ZnSnS 4 Solar Cells Leveraged by High Carrier Density and Interface Defects

Sulfur Adatom and Vacancy Accelerate Charge Recombination in MoS2 but by Different Mechanisms: Time-Domain Ab Initio Analysis.