Abstract:Two-dimensional transition metal dichalcogenides (TMDs) have appeared on the horizon of materials science and solid-state physics due to their unique properties and diverse applications. TMD performance depends strongly on material quality and defect morphology. Calculations predict that sulfur adatom and vacancy are among the most energetically favorable defects in MoS2 with vacancies frequently observed during chemical vapor deposition. By performing ab initio quantum dynamics calculations we demonstrate that both adatom and vacancy accelerate nonradiative charge carrier recombination but this happens through different mechanisms. Surprisingly, holes never significantly populate the shallow trap state created by the sulfur adatom because the trap is strongly localized and decoupled from free charges. Charge recombination bypasses the hole trap. Instead, it occurs directly between free electron and hole. The recombination is faster than in pristine MoS2 because the adatom strongly perturbs the MoS2 layer, breaks its symmetry, and allows more phonon modes to couple to the electronic subsystem. In contrast, the sulfur vacancy accelerates charge recombination by the traditional mechanism involving charge trapping, followed by recombination. This is because the hole and electron traps created by the vacancy are much less localized than the hole trap created by the adatom. Because the sulfur adatom accelerates charge recombination by a factor of 7.9, compared to 1.7 due to vacancy, sulfur adatoms should be strongly avoided. The generated insights highlight the diverse behavior of different types of defects, reveal unexpected features, and provide the mechanistic understanding of charge dynamics needed for tailoring TMD properties and building high-performance devices.

Sulfur Adatom and Vacancy Accelerate Charge Recombination in MoS2 but by Different Mechanisms: Time-Domain Ab Initio Analysis.

Why CVD grown MoS2 samples outperform PVD samples: Time-domain ab initio analysis.

Oxidation Notably Accelerates Nonradiative Electron-Hole Recombination in MoS2 by Different Mechanisms: Time-Domain Ab Initio Analysis

Unravelling the effect of sulfur vacancies on the electronic structure of the MoS 2 crystal.

Charge Separation and Recombination in Two-Dimensional Mos2/Ws2: Time-Domain Ab Initio Modeling

Stability of charged sulfur vacancies in 2D and bulk MoS$_2$ from plane-wave density functional theory with electrostatic corrections

Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures.

Defects, band bending and ionization rings in MoS2

Why Chemical Vapor Deposition Grown Mos2 Samples Outperform Physical Vapor Deposition Samples: Time-Domain Ab Initio Analysis

Electron transport through the multiple sulfur vacancies in MoS2

Greatly Enhanced Optical Absorption of A Defective Mos2 Monolayer Through Oxygen Passivation

Single-Atom Vacancy Defect to Trigger High-Efficiency Hydrogen Evolution of MoS2

Impact of S-Vacancies on the Charge Injection Barrier at the Electrical Contact with the MoS2 Monolayer.

Role of defects in ultrafast charge recombination in monolayer MoS$_2$

Atomistic insight into the oxidation of monolayer transition metal dichalcogenides: from structures to electronic properties

Chemical and Electronic Repair Mechanism of Sulfur Defects in MoS$_2$ Monolayers

An Anomalous Formation Pathway for Dislocation-Sulfur Vacancy Complexes in Polycrystalline Monolayer MoS2

First-principles Study of Sulfur Vacancy Concentration Effect on the Electronic Structures and Hydrogen Evolution Reaction of MoS2.

Influence of Tungsten Doping on Nonradiative Electron-Hole Recombination in Monolayer MoSe2 with Se Vacancies.

Blocking Recombination Centers by Controlling the Charge Density of a Sulfur Vacancy in Antimony Trisulfide.

Electronic and magnetic properties of single chalcogen vacancies in MoS$_2$/Au(111)