Bismuth Vacancies Induced Lattice Strain in BiVO4 Photoanodes Boosting Charge Separation For Water Oxidation
Boyan Liu,Xin Wang,Yingjuan Zhang,Kang Wan,Liangcheng Xu,Siqing Ma,Ruoting Zhao,Songcan Wang,Wei Huang
DOI: https://doi.org/10.1002/aenm.202403835
IF: 27.8
2024-10-05
Advanced Energy Materials
Abstract:Addressing bulk charge recombination is the main challenge for efficient photoelectrochemical water splitting. This work generates lattice strain in BiVO4 by introducing bismuth defects, which significantly promotes charge separation in the bulk, achieving a photocurrent density of 6.20 mA cm−2 at 1.23 V versus the reversible hydrogen electrode under AM 1.5 G illumination. Photoelectrochemical (PEC) water splitting is a promising technology for green hydrogen production. However, severe charge recombination in the photoelectrode materials is one of the key obstacles to achieving high performance. Herein, a BiVO4 photoanode with lattice strain (Str‐BVO) is constructed by generating Bi vacancies to promote charge separation in the bulk. The optimized Str‐BVO photoanode achieves a photocurrent density of 6.20 mA cm−2 at 1.23 V versus the reversible hydrogen electrode under AM 1.5 G illumination, with an impressive charge separation efficiency close to 100%. Systematical experiments and density functional theory reveal that the surface Bi vacancies induced strain causes the distortion of a small number of VO4 tetrahedra, which increases the antibonding state energy of most normal VO4 tetrahedra and creates more electronic vacancy states, thereby significantly promoting electron–hole separation. By surface loading with a FeNiOx co‐catalyst, the photoanode exhibits excellent PEC water‐splitting performance and stability.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels