Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.

Modulation of Electrical Properties in Carbon Nanotube Field-Effect Transistors Through AuCl3 Doping

Threshold Voltage Control of Carbon Nanotube-Based Synaptic Transistors Via Chemical Doping for Plasticity Modulation and Symmetry Improvement

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Carbon Nanotube Materials for Future Integrated Circuit Applications

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Inner Doping of Carbon Nanotubes with Perovskites for Ultralow Power Transistors

On/Off Ratio Improvement of Carbon Nanotube Thin Film Transistors by Combining Asymmetric Gate Design and Chemical Doping

Carbon nanotube FETs decorated by gold nanoparticles: Electrical properties and mechanism

Flexible Printed Three Dimensional (3D) Integrated Carbon Nanotube Complementary Metal Oxide Semiconductor (CMOS) Thin Film Transistors and Circuits

Efficient and Reversible Electron Doping of Semiconductor-Enriched Single-Walled Carbon Nanotubes by Using Decamethylcobaltocene.

Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors.

A Doping-Free Approach to Carbon Nanotube Electronics and Optoelectronics

Investigation of Light Doping and Hetero Gate Dielectric Carbon Nanotube Tunneling Field-Effect Transistor for Improved Device and Circuit-Level Performance

Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits.

Improvement of N-type carbon nanotube field effect transistor performance using the combination of yttrium diffusion layer in HfO2 dielectrics and metal contacts

Carbon Nanotube Electronics: Recent Advances

Carbon Nanotube Network Film-Based Field-Effect Transistor Interface State Optimization by Ambient Air Annealing

Theoretical and experimental investigations of enhanced carbon nanotubes-gold interface conductivity through nitrogen doping

Improvement of N-type carbon nanotube field effect transistor performance using the combination of yttrium diffusion layer in HfO2dielectrics and metal contacts

Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors