Lead-free Layered Aurivillius-type Sn-based Halide Perovskite Ba2X2[Csn−1SnnX3n+1] (X = I/Br/Cl) with an Optimal Band Gap of ∼1.26 Ev and Theoretical Efficiency Beyond 27% for Photovoltaics

Shi-ming Liu,Hong-xia Zhong,Jun-jie Liang,Min Zhang,Yao-hui Zhu,Juan Du,Wen-hui Guo,Yong He,Xinqiang Wang,Jun-jie Shi
DOI: https://doi.org/10.1039/d1ta10822k
IF: 11.9
2022-01-01
Journal of Materials Chemistry A
Abstract:The layered Sn-based perovskite Ba2Br2[Cs2Sn3Br10] with excellent photovoltaic properties is found. It has a bandgap of 1.26 eV and a large optical absorption and carrier mobility. The Ba2Br2[Cs2Sn3Br10]-based solar cell has a high theoretical PCE of 27.7%.
What problem does this paper attempt to address?