Abstract:A Mo─O transient state is introduced to the edge of an as‐grown MoSe2 to achieve the stable growth of WS2/MoSe2 lateral heterostructure. A polymer‐free transfer is developed based on capillary interaction in water‐ethanol solution. The WS2/MoSe2 lateral heterostructure photodetector exhibits superior photoresponse because of the effective separation of photogenerated electron‐hole pairs. The heterostructure of two‐dimensional transition metal dichalcogenide (TMDC) has garnered extensive attention, for the junction is the building block of a semiconductor device. However, the controllable synthesis of TMDC heterostructures of different transition metals and different chalcogen elements is still challenging because of the etching by atom substitution during the chemical vapor deposition (CVD) process. Here, a Mo─O transition state with lower energy is introduced to the edge of an as‐grown MoSe2 by using ultraviolet ozone treatment, to prevent the fast atom substitution of S for Se, and enable a stable growth of WS2/MoSe2 lateral heterostructure. A polymer‐free transfer method is developed based on capillary interaction, and atomic structure characterization confirms the high‐quality WS2/MoSe2 lateral heterostructure. The WS2/MoSe2 lateral heterostructure photodetector exhibits superior photoresponse compared to WS2 and MoSe2 devices, with a responsivity of 21.87 A W−1 and a detectivity of 4.2 × 1012 Jones at 350 nm. Kelvin probe force microscopy result reveals that the built‐in electric field within the heterojunction facilitates the effective separation of photogenerated electron‐hole pairs. This study carries profound implications for the CVD growth and polymer‐free transfer of TMDC heterostructures in photodetector applications.

Oxygen-Assisted Anisotropic Chemical Etching of MoSe2 for Enhanced Phototransistors

Oxygen-Assisted Anisotropic Chemical Etching of MoSe 2 for Enhanced Phototransistors

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Etching-free Patterning Method for Electrical Characterization of Atomically Thin MoSe2 Films Grown by Chemical Vapor Deposition.

Chemical Patterning of High-Mobility Semiconducting 2D Bi 2 O 2 Se Crystals for Integrated Optoelectronic Devices.

Pressure-Dependent Light Emission of Charged and Neutral Excitons in Monolayer MoSe2

Patterned Growth of Transition Metal Dichalcogenide Monolayers and Multilayers for Electronic and Optoelectronic Device Applications

Synthesis of Few-Layer 2H-Mose2 Thin Films with Wafer-Level Homogeneity for High-Performance Photodetector

Growth and Photoresponse of WS2/MoSe2 Lateral Heterostructure

Layer Number and Stacking Engineering of MoS2 Crystals for High-Performance Polarization-Sensitive Photodetector

Enhanced photoresponse of TiO2/MoS2 heterostructure phototransistors by the coupling of interface charge transfer and photogating

Substitutionally Doped MoSe2 for High-Performance Electronics and Optoelectronics.

Atomically Flat Dielectric Patterns for Band Gap Engineering and Lateral Junction Formation in MoSe$_2$ Monolayers

Patterning of transition metal dichalcogenides catalyzed by surface plasmons with atomic precision

Epitaxial growth of bilayer MoS2/MoSe2 heterostructure with high-responsivity enhanced by photogating effect

High performance photodetectors constructed on atomically thin few-layer MoSe2 synthesized using atomic layer deposition and a chemical vapor deposition chamber

Tuning Electrical and Optical Properties of MoSe2 Transistors Via Elemental Doping

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Laser Annealing Towards High-Performance Monolayer MoS2 and WSe2 Field Effect Transistors.