Abstract:Multilayer piezoelectric devices need to co-sinter the piezoelectric ceramic layers and the Ag-rich Ag–Pd internal electrode layers at a low temperature (less than the Ag melting point of 961.78 °C), and need to use Sn–Zn-based lead-free solder to weld the components at 260 °C. This requires low-temperature sintering of high-performance piezoelectric ceramics with a Curie temperature (T c) higher than 260 °C. Thereby low-temperature (940 °C) sintering 0.09 Pb(Ni1/3Nb2/3)O3‒ 0.03 Pb(Mg1/2W1/2)O3‒0.88 Pb(Zr0.5Ti0.5)O3 ceramics are prepared via the solid-state reaction method. Samples added with different Ta2O5 contents are fabricated and compared in terms of phase structure, microstructure, piezo-/ferro-electric properties, and dielectric relaxation. High piezoelectric properties (d 33 = 640 pC/N, d 33∗ = 676 p.m./V, T c = 303 °C) are achieved in the 0.70 wt% Ta2O5 added ceramic with a minimum activation energy of domain wall movement (E a) of 0.025 eV. Rietveld refinement and Raman spectroscopy show that all the ceramics exhibit rhombohedral-tetragonal (R-T) coexistence and the distortion degree of crystal structures increases with the increase of Ta2O5 content. Our results show that the larger the content of the tetragonal phase (CTP), the lower the E a, the smaller the domain, and the higher the piezoelectric response. Low E a favors orientation and extension of polar regions and facilitates the formation of the nanometer-size domain structure (polar nanoregions) which is observed by using piezoresponse force microscopy, thus resulting in high piezoelectric properties. This mechanism associated with the CTP, the E a and the domain structure reveals the origin of the high piezoelectricity in the low-temperature sintering PZT-based relaxor ferroelectric ceramics.

Enhanced piezoelectric properties in low-temperature sintering PZN-PZT ceramics by adjusting Zr/Ti ratio

Enhancement of Piezoelectric Properties in Low-Temperature Sintering PZN–PZT Ceramics by Sr2+ Substitution

Facile Preparation and Performance of Novel High-Tc Xbi(ni1/2ti1/2)o3-(1-x)pb(zr1/2ti1/2)o3 Piezoceramics

Enhancing Electrical Properties of High-Curie Temperature Piezoelectric Ceramics BNT-PZT and Their Mechanism

Effect of Zr/Ti Ratio on the Structure and Electrical Properties of 0.7PbZrxTi1−xO3-0.3Pb(Zn1/3Nb2/3)O3 Piezoelectric Ceramics

Low temperature synthesis and enhanced electrical properties of PZN–PNN–PZT piezoelectric ceramics with the addition of Li2CO3

Ultra‐high‐temperature piezoelectric responses and ultra‐high thermal stability of piezoelectricity in ceramic PbZr 0.54 Ti 0.46 O 3

Phase structure and electrical properties of x PZN–(1− x )PZT piezoceramics near the tetragonal/rhombohedral phase boundary

Achieving superior electrical properties of PZT-PNN piezoelectric ceramics through low-temperature sintering with PbO-CuO eutectic additives

High piezoelectricity of low-temperature sintered Li2CO3-added PNN–PZT relaxor ferroelectrics

A new Pb(Lu1/2Nb1/2)O3-PbZrO 3-PbTiO3 ternary solid solution with morphotropic region and high Curie temperature

Low temperature sintering of Li2CO3 added Pb(Ni1/3Nb2/3)-Pb(Zr,Ti)O3 ceramics with high piezoelectric properties

Low‐temperature sintered 0.5Pb(Ni1/3Nb2/3)O3–0.16PbZrO3–0.34PbTiO3 piezoelectric textured ceramics by Li2CO3 addition

Low-Temperature Sintering of Pzt Ceramics

Superior temperature stability of electromechanical properties and resonant frequency in PYN-PZT piezoelectric ceramics

Effect of MnCO3 on the Electrical Properties of PZT-based Piezoceramics Sintered at Low Temperature

Origin of high piezoelectricity in low-temperature sintering PZT-based relaxor ferroelectric ceramics

Low‐Temperature Sintering of Lead‐Based Piezoelectric Ceramics

High Piezoelectric D33 Coefficient of Lead-Free (ba0.93ca0.07)(ti0.95zr0.05)o3 Ceramics Sintered at Optimal Temperature

Grain size effect on piezoelectric properties of rhombohedral lead zirconate titanate ceramics

Polymorphic Phase Transition and Piezoelectric Properties of (ba1−xcax)(ti0.9zr0.1)o3 Lead-Free Ceramics