Srfeox Resistance Switching Device with Low Operation Voltage Via Oxygen Pretreatment

Rui Su,Jiabao Chen,Weiming Cheng,Yi Li,Xingsheng Wang,Junbing Yan,Xiangshui Miao
DOI: https://doi.org/10.2139/ssrn.4060662
2022-01-01
Abstract:As an important topological phase transition (TPT) material, strontium ferrite (SrFeO x ) could play an important role in the field of resistive memory. Several studies have shown that regulating the oxygen environment during the deposition process of the films can effectively control the RS characteristics of the device. In this paper, the SrFeO x hetero-structure film was prepared by oxygen pretreatment on SrRuO 3 surface before SrFeO x deposition and the as-assembled micrometer-scale RS device exhibits low set operating voltage of 0.6 V and good cycling characteristics. In addition, the dual-layer structure of SrFeO x heterogeneous film and the formation of SrFeO 3-δ conductive filaments were directly observed by TEM. Finally, XPS and UV-vis were used to analyze the bonding energy of oxygen lattice and band gap of 1.8 eV in SrFeO x heterogeneous film, which provides the experimental basis for the explanation of the oxygen diffusion. This study enriches the application of TPT materials in the research field of low power consumption storage devices, and the characterization methods of binding energy and band gap in this paper can provide a reference for research on RS materials.
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