Up to 360 Gb/s Optical Interconnects with Ultra-high Bandwidth Thin Film Lithium Niobate Modulator

Fan Yang,Xiansong Fang,Xinyu Chen,Yanping Li,Fan Zhang

DOI: https://doi.org/10.1364/ofc.2022.m4h.5

2022-01-01

Abstract:We demonstrate ultrahigh-speed optical interconnects with single lane bit rate up to 360Gb/s (120GBaud) PAM-8 signal based on thin film lithium niobate modulator with a 3-dB bandwidth larger than 110GHz.

What problem does this paper attempt to address?

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Ziliang Ruan,Kaixuan Chen,Zong Wang,Xuancong Fan,Ranfeng Gan,Lu Qi,Yiwei Xie,Changjian Guo,Zhonghua Yang,Naidi Cui,Liu Liu

DOI: https://doi.org/10.1002/lpor.202200327

2023-01-01

LASER & PHOTONICS REVIEWS

Abstract:Silicon nitride (SiN) emerges as an important platform for ultralow loss photonic integrations with complementary metal-oxide-semiconductor compatibility. However, active devices, such as modulators, are difficult to realize on pure SiN due to the lack of any electro-optic (EO) properties of the material. Here, an SiN and lithium niobate (LN) heterogenous integration platform supporting high-performance EO modulators on SiN waveguide circuits is introduced. An efficient evanescent coupling structure is realized for low-loss light transitions between the SiN waveguide and the LN ridge waveguide with a measured mode transition loss of only 0.4 dB. Based on this heterogeneous platform, an EO Mach-Zender interference modulator on SiN is built with unprecedented loss, efficiency, and bandwidth performances. A half-wave voltage of 4.3 V with a modulation bandwidth of 37 GHz and an overall insertion loss of 1 dB is measured for a 7-mm long device. Data transmission up to 128 Gb s(-1) with a bit-error-rate of <2.4 x 10(-4) is also demonstrated.
Up to Single Lane 200G Optical Interconnects with Silicon Photonic Modulator

Fan Zhang,Yixiao Zhu,Fan Yang,Lei Zhang,Xiaoke Ruan,Yanping Li,Zhangyuan Chen

DOI: https://doi.org/10.1364/ofc.2019.th4a.6

2019-01-01

Abstract:We demonstrate ultra-high speed optical interconnects with record single lane bit rates of 200Gb/s (80Gbaud) PAM-6 and 176Gb/s (88Gbaud) PAM-4 based on conventional silicon photonic modulator with Mach-Zehnder structure.
Ultrahigh-Speed Optical Interconnects with Thin Film Lithium Niobate Modulator

Xiansong Fang,Fan Yang,Xinyu Chen,Yanping Li,Fan Zhang

DOI: https://doi.org/10.1109/jlt.2022.3201269

IF: 4.7

2022-01-01

Journal of Lightwave Technology

Abstract:The exponential growth in data-driven applications like artificial intelligence and metaverse poses an increasing demand for integrated optical interconnects with efficient and cost-effective high-capacity solutions. For short-reach optical interconnects dominated by intensity-modulated direct detection (IM-DD), high-speed and large-capacity transmission enabled by high-bandwidth electro-optic devices is always highly desired. In this article, based on a thin film lithium niobate (TFLN) modulator with a 3-dB bandwidth larger than 110 GHz fabricated by ourselves, we experimentally demonstrate ultrahigh-speed optical interconnects with probabilistic shaping pulse amplitude modulation (PS-PAM) signals. With linear pre-equalization and Volterra nonlinear equalizer (VNLE), a 120 Gbaud PS-PAM16 signal with a bit rate up to 408 Gb/s is generated. Compared to the regular-PAM8 signal with the same bit rate of 360Gb/s, the PS-PAM signal demonstrates a receiver sensitivity gain of 2.2 dB. With the help of VNLE, 384.5 Gb/s PS-PAM16 signal can be transmitted over 500 m standard single-mode fiber (SSMF) at the C band. The ultra-broadband TFLN enabled transmission provides a promising solution for future 400G per wavelength data-center interconnects.
High-Baudrate SiP and InP Modulators for Data Center Interconnects

Oskars Ozolins,Armands Ostrovskis,Toms Salgals,Benjamin Krüger,Fabio Pittalà,Mahdieh Joharifar,Richard Schatz,Michael Koenigsmann,Yuchuan Fan,Urban Westergren,Haïk Mardoyan,Lu Zhang,Sandis Spolitis,Xianbin Yu,Markus Gruen,Vjaceslavs Bobrovs,Hadrien Louchet,Xiaodan Pang

DOI: https://doi.org/10.23919/softcom58365.2023.10271574

2023-01-01

Abstract:The booming internet traffic sets highly challenging requirements for high-speed computing where low latency is required. This leads to a choice of intensity modulation and direct detection system with the highest baudrate possible. Furthermore, record baudrate supporting modulators will be the key technology for future optical interconnect applications. Therefore, we demonstrated silicon photonics and indium phosphide modulators at highest possible sysmbolrate.
200 Gb/s Optical-Amplifier-Free IM/DD Transmissions Using a Directly Modulated O-Band DFB+R Laser Targeting LR Applications

Xiaodan Pang,Toms Salgals,Hadrien Louchet,Di Che,Markus Gruen,Yasuhiro Matsui,Thomas Dippon,Richard Schatz,Mahdieh Joharifar,Benjamin Kruger,Fabio Pittala,Yuchuan Fan,Aleksejs Udalcovs,Lu Zhang,Xianbin Yu,Sandis Spolitis,Vjaceslavs Bobrovs,Sergei Popov,Oskars Ozolins

DOI: https://doi.org/10.1109/jlt.2023.3261421

IF: 4.7

2023-01-01

Journal of Lightwave Technology

Abstract:We experimentally demonstrate an O-band single-lane 200 Gb/s intensity modulation direct detection (IM/DD) transmission system using a low-chirp, broadband, and high-power directly modulated laser (DML). The employed laser is an isolator-free packaged module with over 65-GHz modulation bandwidth enabled by a distributed feedback plus passive waveguide reflection (DFB+R) design. We transmit high baud rate signals over 20-km standard single-mode fiber (SSMF) without using any optical amplifiers and demodulate them with reasonably low-complexity digital equalizers. We generate and detect up to 170 Gbaud non-return-to-zero on-off-keying (NRZ-OOK), 112 Gbaud 4-level pulse amplitude modulation (PAM4), and 100 Gbaud PAM6 in the optical back-to-back configuration. After transmission over the 20-km optical-amplifier-free SSMF link, up to 150 Gbaud NRZ-OOK, 106 Gbaud PAM4, and 80 Gbaud PAM6 signals are successfully received and demodulated, achieving bit error rate (BER) performance below the 6.25%-overhead hard-decision (HD) forward-error-correction code (FEC) limit. The demonstrated results show the possibility of meeting the strict requirements towards the development of 200 Gb/s/lane IM/DD technologies, targeting 800 Gb/s and 1.6 Tb/s LR applications.
Optical Amplification-Free High Baudrate Links for Intra-Data Center Communications

Oskars Ozolins,Mahdieh Joharifar,Toms Salgals,Hadrien Louchet,Richard Schatz,Markus Gruen,Thomas Dippon,Benjamin Kruger,Fabio Pittala,Di Che,Yasuhiro Matsui,Yuchuan Fan,Aleksejs Udalcovs,Urban Westergren,Lu Zhang,Xianbin Yu,Sandis Spolitis,Vjaceslavs Bobrovs,Sergei Popov,Xiaodan Pang

DOI: https://doi.org/10.1109/jlt.2022.3214722

IF: 4.7

2022-01-01

Journal of Lightwave Technology

Abstract:The enormous traffic growth sets a stringent requirement to upgrade short-reach optical links to 1.6 TbE capacity in an economically viable way. The power consumption and latency in these links should be as low as possible, especially for high-speed computing. This is possible to achieve using high baudrate on-off keying links thanks to a better noise tolerance and a relaxed requirement on linearity for electronics and photonics. In this regard, we demonstrate a 200 Gbaud on-off keying link without any optical amplification using an externally modulated laser with 3.3 dBm of modulated output power operating at 1541.25 nm wavelength. We achieve transmission over 200 meters of single-mode fiber with performance below 6.25% overhead hard-decision forward error correction threshold for each baudrate and all selection of modulation formats. We also show 108 Gbaud on-off keying link with superior performance without decision feedback equalizer up to 400 meters of single-mode fiber. In addition, we benchmark the short-reach optical link with 112 Gbaud four-level pulse amplitude modulation and 100 Gbaud six-level pulse amplitude modulation. For 108 Gbaud on-off keying and 112 Gbaud four-level pulse amplitude modulation, we can achieve an even lower bit error rate.
Ultra-High-Efficiency Dual-Band Thin-Film Lithium Niobate Modulator Incorporating Low-k Underfill with 220 GHz Extrapolated Bandwidth for 390 Gbit/s PAM8 Transmission

Hao Liu,Yutong He,Bing Xiong,Changzheng Sun,Zhibiao Hao,Lai Wang,Jian Wang,Yanjun Han,Hongtao Li,Lin Gan,Yi Luo

2024-11-23

Abstract:High-performance electro-optic modulators play a critical role in modern telecommunication networks and intra-datacenter interconnects. Low driving voltage, large electro-optic bandwidth, compact device size, and multi-band operation ability are essential for various application scenarios, especially energy-efficient high-speed data transmission. However, it is challenging to meet all these requirements simultaneously. Here, we demonstrate a high-performance dual-band thin-film lithium niobate electro-optic modulator with low-k underfill to achieve overall performance improvement. The low-k material helps reduce the RF loss of the modulator and achieve perfect velocity matching with narrow electrode gap to overcome the voltage-bandwidth limitation, extending electro-optic bandwidth and enhancing modulation efficiency simultaneously. The fabricated 7-mm-long modulator exhibits a low half-wave voltage of 1.9 V at C-band and 1.54 V at O-band, featuring a low half-wave voltage-length product of 1.33 V*cm and 1.08 V*cm, respectively. Meanwhile, the novel design yields an ultra-wide extrapolated 3 dB bandwidth of 220 GHz (218 GHz) in the C-band (O-band). High-speed data transmission in both C- and O-bands using the same device has been demonstrated for the first time by PAM8 with data rates up to 390 Gbit/s, corresponding to a record-low energy consumption of 0.69 fJ/bit for next-generation cost-effective ultra-high-speed optical communications.

Optics,Applied Physics
Towards Single Lane 200G Optical Interconnects with Silicon Photonic Modulator

Yixiao Zhu,Fan Zhang,Fan Yang,Lei Zhang,Xiaoke Ruan,Yanping Li,Zhangyuan Chen

DOI: https://doi.org/10.1109/jlt.2019.2944762

IF: 4.7

2020-01-01

Journal of Lightwave Technology

Abstract:In this work, based on a conventional silicon photonic travelling-wave Mach-Zehnder modulator (MZM) with a 3-dB bandwidth of 22.5 GHz, we experimentally demonstrate ultra-high speed optical interconnects with Nyquist shaped pulse amplitude modulation (PAM) signals. For bandwidth-limited systems, a two-tap digital post filter is employed to suppress the equalization-enhanced high frequency noise. The post filter induced inter-symbol interference (ISI) is subsequently eliminated by maximum likelihood sequence detection (MLSD). Enabled by the post filter and MLSD, we achieve 200 Gb/s (80 Gbaud) PAM-6 signal direct detection (DD) transmission over 1 km standard single-mode fiber (SSMF) with a bit-error rate (BER) below the 20% hard-decision forward error correction (HD-FEC) threshold of 1.5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−2</sup> . For PAM-4 format, we successfully transmit 192 Gb/s (96 Gbaud) and 176 Gb/s (88 Gbaud) signals over 1 km and 2 km SSMF, respectively, with BERs lower than the 20% HD-FEC threshold. For PAM-8 format, 192 Gb/s (64 Gbaud) and 168 Gb/s (56 Gbaud) signals are generated at back-to-back (BTB) and transmitted over 1 km SSMF, respectively. To our best knowledge, we achieve the highest single lane bitrates ever reported for single polarization PAM-4/6/8 signal generation and DD transmission with all-silicon MZM. The flexible receiver-side digital signal processing (DSP) can significantly enhance the performance of silicon MZM, which provides a promising solution for future single lane 200 G data-center interconnects.
30 Gbps high optical bandwidth silicon modulator

Hao Xu,Xianyao Li,Xi Xiao,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1109/Group4.2013.6644431

2013-01-01

Abstract:We report a high speed silicon modulator with a 3 dB optical bandwidth of 39 nm. 30 Gbps electro-optical modulations were experimentally demonstrated with a low driving voltage of 3 V.
Ultrabroadband thin-film lithium tantalate modulator for high-speed communications

Chengli Wang,Dengyang Fang,Alexander Kotz,Grigory Lihachev,Mikhail Churaev,Zihan Li,Adrian Schwarzenberger,Xin Ou,Christian Koos,Tobias Kippenberg

2024-10-29

Abstract:The continuous growth of global data traffic over the past three decades, along with advances in disaggregated computing architectures, presents significant challenges for optical transceivers in communication networks and high-performance computing systems. Specifically, there is a growing need to significantly increase data rates while reducing energy consumption and cost. High-performance optical modulators based on materials such as InP, thin-film lithium niobate (LiNbO3), or plasmonics have been developed, with LiNbO3 excelling in high-speed and low-voltage modulation. Nonetheless, the widespread industrial adoption of thin film LiNbO3 remains compounded by the rather high cost of the underlying 'on insulator' substrates -- in sharp contrast to silicon photonics, which can benefit from strong synergies with high-volume applications in conventional microelectronics. Here, we demonstrate an integrated 110 GHz modulator using thin-film lithium tantalate (LiTaO3) -- a material platform that is already commercially used for millimeter-wave filters and that can hence build upon technological and economic synergies with existing high-volume applications to offer scalable low-cost manufacturing. We show that the LiTaO3 photonic integrated circuit based modulator can support 176 GBd PAM8 transmission at net data rates exceeding 400 Gbit/s. Moreover, we show that using silver electrodes can reduce microwave losses compared to previously employed gold electrodes. Our demonstration positions LiTaO3 modulator as a novel and highly promising integration platform for next-generation high-speed, energy-efficient, and cost-effective transceivers.

Optics,Applied Physics
Monolithic Thin Film Lithium Niobate Electro-Optic Modulator with over 110 GHz Bandwidth

Fan Yang,Xiansong Fang,Xinyu Chen,Lixin Zhu,Fan Zhang,Zhangyuan Chen,Yanping Li

DOI: https://doi.org/10.3788/col202220.022502

IF: 2.56

2021-01-01

Chinese Optics Letters

Abstract:High-performance thin film lithium niobate (LN) electro-optic modulators with low cost are in demand. Based on photolithography and wet etching, we experimentally demonstrate a thin film LNMach–Zehnder modulator with a 3 dB bandwidth exceeding 110 GHz, which shows the potential of boosting the throughput and reducing cost. The fabricated modulator also exhibits a comparable low half-wave voltage-length product of ∼2.37 V · cm, a high extinction ratio of>23 dB, and the propagation loss of optical waveguides of ∼0.2 dB=cm. Besides, six-level pulse amplitude modulation up to 250 Gb=s is successfully achieved.
Net 8×250 Gbit/s/λ PAM6/8 Optical Interconnect Over High-Density Eight-Core Fiber and Low-Crosstalk Laser Direct Writing FI/FO Devices

Yu Yang,Zhaopeng Xu,Honglin Ji,Gang Qiao,Lulu Liu,Shangcheng Wang,Ruiting Cheng,Jinyi Yu,Chuanchuan Yang,Zhixue He,Yongqi He,Zhangyuan Chen,Weisheng Hu,Juhao Li

DOI: https://doi.org/10.1109/ACP/POEM59049.2023.10369710

2023-01-01

Abstract:We experimentally demonstrate a net 8×250 Gbit/s/λ PAM6 and PAM8 transmission over 200-m standard-125μm-cladding high-density eight-core fiber and low-crosstalk femtosecond laser direct writing fan-in/fan-out devices. The proposed prototype system is promising for high-speed optical interconnection applications.
25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

Xi Xiao,Yingtao Hu,Hao Xu,Xianyao Li,Kang Xiong,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1117/12.920386

2011-01-01

Abstract:We present a kind of depletion-mode silicon modulators based on cascade interleaved PN junctions, which simultaneously provide high modulation efficiency and large modulation bandwidth. The interfaces of the PN junctions are vertical to the waveguide's propagation direction and tolerant with +/- 150nm junction misalignment on the cost of little degradation on the modulation efficiency. The device was fabricated with standard 0.18 mu m CMOS process, and provides a V pi L pi < 1V.cm and an intrinsic bandwidth 39GHz. Over 10GHz electro-optical modulation bandwidth of the device was experimentally obtained. High speed non-return-zero modulation with a bit rate up to 25Gbit/s was finally demonstrated.
Compact 100gbaud Driverless Thin-Film Lithium Niobate Modulator on a Silicon Substrate

Gengxin Chen,Kaixuan Chen,Junwei Zhang,Ranfeng Gan,Lu Qi,Xuancong Fan,Ziliang Ruan,Zhenrui Lin,Jie Liu,Chao Lu,Alan Pak Tao Lau,Daoxin Dai,Changjian Guo,Liu

DOI: https://doi.org/10.1364/oe.458431

IF: 3.8

2022-01-01

Optics Express

Abstract:Electro-optic (EO) modulators with a high modulation bandwidth are indispensable parts of an optical interconnect system. A key requirement for an energy-efficient EO modulator is the low drive voltage, which can be provided using a standard complementary metal oxide semiconductor circuity without an amplifying driver. Thin-film lithium niobate has emerged as a new promising platform, and shown its capable of achieving driverless and high-speed EO modulators. In this paper, we report a compact high-performance modulator based on the thin-film lithium niobate platform on a silicon substrate. The periodic capacitively loaded travelling-wave electrode is employed to achieve a large modulation bandwidth and a low drive voltage, which can support a driverless single-lane 100Gbaud operation. The folded modulation section design also helps to reduce the device length by almost two thirds. The fabricated device represents a large EO bandwidth of 45GHz with a half-wave voltage of 0.7V. The driverless transmission of a 100Gbaud 4-level pulse amplitude modulation signal is demonstrated with a power consumption of 4.49fj/bit and a bit-error rate below the KP4 forward-error correction threshold of 2.4×10−4.
60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1364/ofc.2013.ow4j.3

2013-01-01

Abstract:We present 60 Gbit/s silicon MZI and microring modulators with the PN junctions and electrodes designed for improved modulation efficiency and high speed. WDM modulations of 4×50 Gbit/s have also been demonstrated based on microring modulators.
High-performance Coherent Optical Modulators based on Thin-film Lithium Niobate Platform

Mengyue Xu,Mingbo He,Hongguang Zhang,Jian Jian,Ying Pan,Xiaoyue Liu,Lifeng Chen,Xiangyu Meng,Hui Chen,Zhaohui Li,Xi Xiao,Shaohua Yu,Siyuan Yu,Xinlun Cai

DOI: https://doi.org/10.1038/s41467-020-17806-0

2020-06-28

Abstract:The coherent transmission technology using digital signal processing and advanced modulation formats, is bringing networks closer to the theoretical capacity limit of optical fibres, the Shannon limit. The in-phase quadrature electro-optic modulator that encodes information on both the amplitude and the phase of light, is one of the underpinning devices for the coherent transmission technology. Ideally, such modulator should feature low loss, low drive voltage, large bandwidth, low chirp and compact footprint. However, these requirements have been only met on separate occasions. Here, we demonstrate integrated thin-film lithium niobate in-phase/quadrature modulators that fulfil these requirements simultaneously. The presented devices exhibit greatly improved overall performance (half-wave voltage, bandwidth and optical loss) over traditional lithium niobate counterparts, and support modulation data rate up to 320 Gbit s-1. Our devices pave new routes for future high-speed, energy-efficient, and cost-effective communication networks.

Applied Physics
800 Gbit/s QSFP-DD Transceiver Based on Thin-film Lithium Niobate Photonic Integrated Circuit

Heng Li,Lane Luo,Mingzhi Lu,Quanan Chen,Jin Yu,Rui Huang,Jiangen He,Yongqian Tang,Allen Zheng,Zuxin Zhong,Celia Lei,Hua Liu,Xiaohan Li,Xiangyang Dai,Lirong Huang,Qiaoyin Lu,Weihua Guo

DOI: https://doi.org/10.1109/jlt.2023.3238844

IF: 4.7

2023-01-01

Journal of Lightwave Technology

Abstract:800G Ethernet is expected to be the dominant solution for the next generation inter- and intra-data-center connections. To boost the transmission capacity to 800 Gbs, utilizing multi-level pulse amplitude modulation (PAM) transmitting format and adopting multiple lanes are competitive solutions. In this paper, we demonstrate a PAM4-modulated 800G QSFP-DD transceiver integrated with two 4 100G thin-film lithium niobate (TFLN) DR4 modulator chips. The DR4 modulator chips have a 13.5 dB insertion loss (including the inherent 3 dB modulation loss and 6 dB splitting loss) and one DR4 chip requires one 17 dBm light source. The EO response has a 40 GHz bandwidth at 2.3 dB and the electric reflection keeps below 12 dB. The eight channels of 800G transceiver have a clear open eye patterns at 1.5 Vpp driving voltage under 53.125 Gbaud PAM-4 modulation with all the ERs above 4.03 dB and TDECQ's below 2.13 dB. The sensitivity of the receiver is around 8.6 dBm after 2 km and back-to-back transmission with the BER of all the channels below the DR4 forward error correcting threshold. It is demonstrated that our 800G QSFP-DD transceiver meets 400GBASE-DR4 standards and packaging requirements simultaneously. This is the first time that 4 100G DR4 modulator array based on TFLN and 800G QSFP-DD transceiver based on TFLN are reported to the best of our knowledge.

engineering, electrical & electronic,optics,telecommunications
280 Gb/s IM/DD PS-PAM-8 Transmission over 10 Km SSMF at O-Band for Optical Interconnects.

Jiao Zhang,Kaihui Wang,Yiran Wei,Li Zhao,Wen Zhou,Jiangnan Xiao,Bo Liu,Xiangjun Xin,Feng Zhao,Ze Dong,Jianjun Yu

DOI: https://doi.org/10.1364/ofc.2020.m4f.1

2020-01-01

Abstract:We experimentally demonstrated single-lane 200G+ IM/DD PAM-N system at O-band using SOA and probabilistic shaping (PS) for high-speed short reach optical interconnects. 280 Gb/s PS-PAM-8 signals can transmit over 10 km SSMF.
Compact electro-optic modulator on lithium niobate

Bingcheng Pan,Hongyuan Cao,Yishu Huang,Zong Wang,Kaixuan Chen,Huan Li,Zejie Yu,Daoxin Dai

DOI: https://doi.org/10.1364/PRJ.449172

IF: 7.6

2022-01-01

Photonics Research

Abstract:Fast electro-optic modulators with an ultracompact footprint and low power consumption are always highly desired for optical interconnects. Here we propose and demonstrate a high-performance lithium niobate electro-optic modulator based on a new 2 x 2 Fabry-Perot cavity. In this structure, the input and reflected beams are separated by introducing asymmetric multimode-waveguide gratings, enabling TE0 - TE1 mode conversion. The measured results indicate that the fabricated modulator features a low excess loss of similar to 0.9 dB, a high extinction ratio of similar to 21 dB, a compact footprint of similar to 2120 mu m(2), and high modulation speeds of 40 Gbps OOK and 80 Gbps PAM4 signals. The demonstrated modulator is promising for high-speed data transmission and signal processing. (C) 2022 Chinese Laser Press

Up to 360 Gb/s Optical Interconnects with Ultra-high Bandwidth Thin Film Lithium Niobate Modulator

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Up to Single Lane 200G Optical Interconnects with Silicon Photonic Modulator

Ultrahigh-Speed Optical Interconnects with Thin Film Lithium Niobate Modulator

High-Baudrate SiP and InP Modulators for Data Center Interconnects

200 Gb/s Optical-Amplifier-Free IM/DD Transmissions Using a Directly Modulated O-Band DFB+R Laser Targeting LR Applications

Optical Amplification-Free High Baudrate Links for Intra-Data Center Communications

Ultra-High-Efficiency Dual-Band Thin-Film Lithium Niobate Modulator Incorporating Low-k Underfill with 220 GHz Extrapolated Bandwidth for 390 Gbit/s PAM8 Transmission

Towards Single Lane 200G Optical Interconnects with Silicon Photonic Modulator

30 Gbps high optical bandwidth silicon modulator

Ultrabroadband thin-film lithium tantalate modulator for high-speed communications

Monolithic Thin Film Lithium Niobate Electro-Optic Modulator with over 110 GHz Bandwidth

Net 8×250 Gbit/s/λ PAM6/8 Optical Interconnect Over High-Density Eight-Core Fiber and Low-Crosstalk Laser Direct Writing FI/FO Devices

25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

Compact 100gbaud Driverless Thin-Film Lithium Niobate Modulator on a Silicon Substrate

60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

High-performance Coherent Optical Modulators based on Thin-film Lithium Niobate Platform

800 Gbit/s QSFP-DD Transceiver Based on Thin-film Lithium Niobate Photonic Integrated Circuit

280 Gb/s IM/DD PS-PAM-8 Transmission over 10 Km SSMF at O-Band for Optical Interconnects.

Compact electro-optic modulator on lithium niobate