Up to Single Lane 200G Optical Interconnects with Silicon Photonic Modulator

Fan Zhang,Yixiao Zhu,Fan Yang,Lei Zhang,Xiaoke Ruan,Yanping Li,Zhangyuan Chen

DOI: https://doi.org/10.1364/ofc.2019.th4a.6

2019-01-01

Abstract:We demonstrate ultra-high speed optical interconnects with record single lane bit rates of 200Gb/s (80Gbaud) PAM-6 and 176Gb/s (88Gbaud) PAM-4 based on conventional silicon photonic modulator with Mach-Zehnder structure.

What problem does this paper attempt to address?

Towards Single Lane 200G Optical Interconnects with Silicon Photonic Modulator

Yixiao Zhu,Fan Zhang,Fan Yang,Lei Zhang,Xiaoke Ruan,Yanping Li,Zhangyuan Chen

DOI: https://doi.org/10.1109/jlt.2019.2944762

IF: 4.7

2020-01-01

Journal of Lightwave Technology

Abstract:In this work, based on a conventional silicon photonic travelling-wave Mach-Zehnder modulator (MZM) with a 3-dB bandwidth of 22.5 GHz, we experimentally demonstrate ultra-high speed optical interconnects with Nyquist shaped pulse amplitude modulation (PAM) signals. For bandwidth-limited systems, a two-tap digital post filter is employed to suppress the equalization-enhanced high frequency noise. The post filter induced inter-symbol interference (ISI) is subsequently eliminated by maximum likelihood sequence detection (MLSD). Enabled by the post filter and MLSD, we achieve 200 Gb/s (80 Gbaud) PAM-6 signal direct detection (DD) transmission over 1 km standard single-mode fiber (SSMF) with a bit-error rate (BER) below the 20% hard-decision forward error correction (HD-FEC) threshold of 1.5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−2</sup> . For PAM-4 format, we successfully transmit 192 Gb/s (96 Gbaud) and 176 Gb/s (88 Gbaud) signals over 1 km and 2 km SSMF, respectively, with BERs lower than the 20% HD-FEC threshold. For PAM-8 format, 192 Gb/s (64 Gbaud) and 168 Gb/s (56 Gbaud) signals are generated at back-to-back (BTB) and transmitted over 1 km SSMF, respectively. To our best knowledge, we achieve the highest single lane bitrates ever reported for single polarization PAM-4/6/8 signal generation and DD transmission with all-silicon MZM. The flexible receiver-side digital signal processing (DSP) can significantly enhance the performance of silicon MZM, which provides a promising solution for future single lane 200 G data-center interconnects.
High-Baudrate SiP and InP Modulators for Data Center Interconnects

Oskars Ozolins,Armands Ostrovskis,Toms Salgals,Benjamin Krüger,Fabio Pittalà,Mahdieh Joharifar,Richard Schatz,Michael Koenigsmann,Yuchuan Fan,Urban Westergren,Haïk Mardoyan,Lu Zhang,Sandis Spolitis,Xianbin Yu,Markus Gruen,Vjaceslavs Bobrovs,Hadrien Louchet,Xiaodan Pang

DOI: https://doi.org/10.23919/softcom58365.2023.10271574

2023-01-01

Abstract:The booming internet traffic sets highly challenging requirements for high-speed computing where low latency is required. This leads to a choice of intensity modulation and direct detection system with the highest baudrate possible. Furthermore, record baudrate supporting modulators will be the key technology for future optical interconnect applications. Therefore, we demonstrated silicon photonics and indium phosphide modulators at highest possible sysmbolrate.
Up to 360 Gb/s Optical Interconnects with Ultra-high Bandwidth Thin Film Lithium Niobate Modulator

Fan Yang,Xiansong Fang,Xinyu Chen,Yanping Li,Fan Zhang

DOI: https://doi.org/10.1364/ofc.2022.m4h.5

2022-01-01

Abstract:We demonstrate ultrahigh-speed optical interconnects with single lane bit rate up to 360Gb/s (120GBaud) PAM-8 signal based on thin film lithium niobate modulator with a 3-dB bandwidth larger than 110GHz.
200 Gb/s Optical-Amplifier-Free IM/DD Transmissions Using a Directly Modulated O-Band DFB+R Laser Targeting LR Applications

Xiaodan Pang,Toms Salgals,Hadrien Louchet,Di Che,Markus Gruen,Yasuhiro Matsui,Thomas Dippon,Richard Schatz,Mahdieh Joharifar,Benjamin Kruger,Fabio Pittala,Yuchuan Fan,Aleksejs Udalcovs,Lu Zhang,Xianbin Yu,Sandis Spolitis,Vjaceslavs Bobrovs,Sergei Popov,Oskars Ozolins

DOI: https://doi.org/10.1109/jlt.2023.3261421

IF: 4.7

2023-01-01

Journal of Lightwave Technology

Abstract:We experimentally demonstrate an O-band single-lane 200 Gb/s intensity modulation direct detection (IM/DD) transmission system using a low-chirp, broadband, and high-power directly modulated laser (DML). The employed laser is an isolator-free packaged module with over 65-GHz modulation bandwidth enabled by a distributed feedback plus passive waveguide reflection (DFB+R) design. We transmit high baud rate signals over 20-km standard single-mode fiber (SSMF) without using any optical amplifiers and demodulate them with reasonably low-complexity digital equalizers. We generate and detect up to 170 Gbaud non-return-to-zero on-off-keying (NRZ-OOK), 112 Gbaud 4-level pulse amplitude modulation (PAM4), and 100 Gbaud PAM6 in the optical back-to-back configuration. After transmission over the 20-km optical-amplifier-free SSMF link, up to 150 Gbaud NRZ-OOK, 106 Gbaud PAM4, and 80 Gbaud PAM6 signals are successfully received and demodulated, achieving bit error rate (BER) performance below the 6.25%-overhead hard-decision (HD) forward-error-correction code (FEC) limit. The demonstrated results show the possibility of meeting the strict requirements towards the development of 200 Gb/s/lane IM/DD technologies, targeting 800 Gb/s and 1.6 Tb/s LR applications.
High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

Oskars Ozolins,Armands Ostrovskis,Michael Koenigsmann,Toms Salgals,Benjamin Krüger,Fabio Pittalà,Ryan P. Scott,Hansjoerg Haisch,Hadrien Louchet,Aleksandrs Marinins,Sandis Spolitis,Jurgis Porins,Lu Zhang,Richard Schatz,Xianbin Yu,Vjaceslavs Bobrovs,Markus Gruen,Xiaodan Pang

DOI: https://doi.org/10.1109/icton59386.2023.10207236

2023-01-01

Abstract:Silicon photonics (SiP) is a key enabling technology for high-baudrate communication. It is a key technology for future 800 Gbps and 1.6 Tbps solutions to meet the ever-increasing demands. The 800G pluggable multi-source agreement (MSA) suggests that intensity-modulated direct-detection (IM/DD) is the most sustainable way forward [1]. The high operational bandwidth of each transceiver component is essential. An ultra-compact SiP slow light modulator with record-high bandwidth of 110 GHz shows the potential [2]. Therefore, both multilevel pulse amplitude modulation (PAM) and on-off keying (OOK) should be considered. SiP offers excellent production yield and has a substantial role in optical interconnects. SiP ring resonator modulators (RRM) have unique advantages like a small footprint, simple driver configuration, low power consumption, and suitability for multichannel applications. On the other hand, the SiP Mach-Zehnder modulator (MZM) offers differential drive benefits.
Single Lane 176gb/s Single Sideband PAM-4 Transmission over 400km with a Silicon Photonic Dual-Drive Mach-Zehnder Modulator.

Lei Zhang,Fan Yang,Xiaoke Ruan,Yanping Li,Fan Zhang

DOI: https://doi.org/10.1364/ofc.2020.t3i.4

2020-01-01

Abstract:We experimentally demonstrate ultra-high speed metro-scale optical transmission of SSB PAM-4 signal with a record single lane bit rate of 176Gb/s over 400km SSMF based on conventional silicon photonic dual-drive modulator with Mach-Zehnder structure.
SOI Based Optical Waveguide Devices with 44gbit/s High Speed

Jinzhong Yu,Xi Xiao,Zhiyong Li,Zhongchao Fan,Kang Xiong,Hao Xu,Xianyao Li,Tao Chu,Yude Yu

DOI: https://doi.org/10.1364/iont.2012.ith3b.1

2012-01-01

Abstract:Research results for SOI optical modulator/switch, optical couplers in our group will be presented in the paper. Modulation speed of silicon MZI and MRR modulators with interleaved reverse PN junctions both achieve 44 Gbit/s, respectively. SOI optical couplers with 6 different structures have been developed, coupling efficiency of 65% has been obtained.
60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1364/ofc.2013.ow4j.3

2013-01-01

Abstract:We present 60 Gbit/s silicon MZI and microring modulators with the PN junctions and electrodes designed for improved modulation efficiency and high speed. WDM modulations of 4×50 Gbit/s have also been demonstrated based on microring modulators.
Beyond 300gb/s from an Integrated Single-Channel Silicon Photonics Modulator Driver Combination

Ke Li,David J. Thomson,Lingjun Zhou,Weiwei Zhang,Shenghao Liu,Wei Cao,Callum G. Littlejohns,XingZhao Yan,Martin Ebert,Mehdi Banakar,Dehn Tran,Fanfan Meng,Lei Wang,Zhixue He,Fan Zhang,Shaohua Yu,Graham T. Reed

DOI: https://doi.org/10.1109/siphotonics60897.2024.10543408

2024-01-01

Abstract:We investigate the performance boundary of integrated CMOS silicon photonics transmitters by using optical equalisation techniques. Without using any off-line DSP techniques at the receiver side, experimental results demonstrate 182Gbps OOK and 308Gbps PAM-4 transmissions with the energy efficiency including driver, of better than 1pJ/bit.
Net 8×250 Gbit/s/λ PAM6/8 Optical Interconnect Over High-Density Eight-Core Fiber and Low-Crosstalk Laser Direct Writing FI/FO Devices

Yu Yang,Zhaopeng Xu,Honglin Ji,Gang Qiao,Lulu Liu,Shangcheng Wang,Ruiting Cheng,Jinyi Yu,Chuanchuan Yang,Zhixue He,Yongqi He,Zhangyuan Chen,Weisheng Hu,Juhao Li

DOI: https://doi.org/10.1109/ACP/POEM59049.2023.10369710

2023-01-01

Abstract:We experimentally demonstrate a net 8×250 Gbit/s/λ PAM6 and PAM8 transmission over 200-m standard-125μm-cladding high-density eight-core fiber and low-crosstalk femtosecond laser direct writing fan-in/fan-out devices. The proposed prototype system is promising for high-speed optical interconnection applications.
8×250 Gbit/s PAM4 Transmission over 1 Km Single Mode Fiber with an All-Silicon LAN WDM Transmitter.

Penghui Xia,Zhongya Li,Nanan Ning,Qiang Zhang,Xiaoqing Jiang,Jianyi Yang,Junwen Zhang,Hui Yu

DOI: https://doi.org/10.1364/ofc.2023.tu3i.6

2023-01-01

Abstract:We demonstrate 2 Tbit/s (8×250 Gbit/s) and 1.6 Tbit/s (8×200 Gbit/s) 4-level pulse amplitude modulation (PAM4) transmissions over 1 km and 10 km single mode fibers (SMF) with an all-silicon wavelength division multiplexing transmitter chip.
25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

Xi Xiao,Yingtao Hu,Hao Xu,Xianyao Li,Kang Xiong,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1117/12.920386

2011-01-01

Abstract:We present a kind of depletion-mode silicon modulators based on cascade interleaved PN junctions, which simultaneously provide high modulation efficiency and large modulation bandwidth. The interfaces of the PN junctions are vertical to the waveguide's propagation direction and tolerant with +/- 150nm junction misalignment on the cost of little degradation on the modulation efficiency. The device was fabricated with standard 0.18 mu m CMOS process, and provides a V pi L pi < 1V.cm and an intrinsic bandwidth 39GHz. Over 10GHz electro-optical modulation bandwidth of the device was experimentally obtained. High speed non-return-zero modulation with a bit rate up to 25Gbit/s was finally demonstrated.
30 Gbps high optical bandwidth silicon modulator

Hao Xu,Xianyao Li,Xi Xiao,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1109/Group4.2013.6644431

2013-01-01

Abstract:We report a high speed silicon modulator with a 3 dB optical bandwidth of 39 nm. 30 Gbps electro-optical modulations were experimentally demonstrated with a low driving voltage of 3 V.
Development of Silicon Photonic Devices for Optical Interconnects

Xi Xiao,ZhiYong Li,Tao Chu,Hao Xu,XianYao Li,Anastasia Nemkova,Xiong Kang,YuDe Yu,JinZhong Yu

DOI: https://doi.org/10.1007/s11431-012-5120-2

2013-01-01

Science China Technological Sciences

Abstract:Silicon photonic devices based on complementary-metal-oxide-semiconductor (CMOS) compatible technologies have shown attractive performances on very-large-scale monolithic optoelectronic integration, high speed modulation and switching, and efficient off-chip optical coupling. This paper presents the recent progress on fast silicon optical modulation, wavelength-insensitive optical switching and efficient optical coupling techniques in our group. Several CMOS-compatible silicon optical couplers with different structures have been developed, showing the highest coupling efficiency of 65%. Broadband silicon-based optical switches with sub-nanosecond switching on-off time are experimentally realized. Silicon modulators with novel PN junctions are demonstrated with the speed up to 50 Gb s −1 .
A monolithic 56 Gb/s silicon photonic pulse-amplitude modulation transmitter

Chi Xiong,Douglas M. Gill,Jonathan E. Proesel,Jason S. Orcutt,Wilfried Haensch,William M. J. Green

DOI: https://doi.org/10.1364/OPTICA.3.001060

2016-08-27

Abstract:Silicon photonics promises to address the challenges for next-generation short-reach optical interconnects. Growing bandwidth demand in hyper-scale data centers and high-performance computing motivates the development of faster and more-efficient silicon photonics links. While it is challenging to raise the serial line rate, further scaling of the data rate can be realized by, for example, increasing the number of parallel fibers, increasing the number of wavelengths per fiber, and using multi-level pulse-amplitude modulation (PAM). Among these approaches, PAM has a unique advantage because it does not require extra lasers or a costly overhaul of optical fiber cablings within the existing infrastructure. Here, we demonstrate the first fully monolithically integrated silicon photonic four-level PAM (PAM-4) transmitter operating at 56 Gb/s and demonstrate error-free transmission (bit-error-rate < 10$^{-12}$) up to 50 Gb/s without forward error correction. The superior PAM-4 waveform is enabled by optimization of silicon traveling wave modulators and monolithic integration of the CMOS driver circuits. Our results show that monolithic silicon photonics technology is a promising platform for future ultrahigh data rate optical interconnects.

Optics
44-Gb/s Silicon Microring Modulators Based on Zigzag Pn Junctions

Xi Xiao,Xianyao Li,Hao Xu,Yingtao Hu,Kang Xiong,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/lpt.2012.2213244

IF: 2.6

2012-01-01

IEEE Photonics Technology Letters

Abstract:We experimentally demonstrate silicon microring modulators with >40-Gb/s modulation speed based on the carrier-depletion mechanism in reverse-biased PN junctions. A novel zigzag PN junction providing a modulation efficiency of 3.85 x 10(-5)/V and a resistance-capacitance bandwidth of 51 GHz is proposed and demonstrated. The moderate Q factor of similar to 8 000 and the operation wavelength detuning are optimized to relieve photon-lifetime-induced bandwidth limitation. Finally, with a voltage swing of 3 V, high-speed modulation of 20 and 44 Gb/s is experimentally demonstrated with the extinction ratio of 3.45 and 3.01 dB, showing great potential in the application of ultrahigh-capacity optical interconnects.
Up to 168-Gb/s PAM-4 direct detection transmission with silicon travelling wave Mach-Zehnder modulator.

Fan Yang,Yixiao Zhu,Lei Zhang,Xiaoke Ruan,Yanping Li,Fan Zhang

2018-01-01

Abstract:Based on a silicon travelling wave Mach-Zehnder modulator, we demonstrate record 168Gb/s (84Gbaud) and 160Gb/s (80Gbaud) PAM-4 direct detection transmission over 1km and 2km SSMF, respectively, with bit error rates below 20% HD-FEC threshold.
Up to 170Gbaud Optical Interconnects with Integrated CMOS-Silicon Photonics Transmitter

Xiansong Fang,Ke Li,David J. Thomson,Fan Yang,Shenghao Liu,Weiwei Zhang,Wei Cao,Callum G. Littlejohns,XingZhao Yan,Martin Ebert,Mehdi Banakar,Dehn Tran,Fanfan Meng,Han Du,Graham T. Reed,Fan Zhang

DOI: https://doi.org/10.1109/ACP55869.2022.10088674

2022-01-01

Abstract:We investigate the performance boundary of integrated CMOS silicon photonics transmitters with DSP techniques. 170Gbaud OOK generation and 120Gbaud 20km transmission is achieved with a CMOS-silicon transmitter, where the driver amplifier only consumes 158mW.
Highly Efficient Silicon Michelson Interferometer Modulators

Xianyao Li,Xi Xiao,Hao Xu,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/lpt.2013.2238625

IF: 2.6

2013-01-01

IEEE Photonics Technology Letters

Abstract:We present the first high-speed silicon Michelson interferometer (MI) modulator with two 500 μm-long phase shifters. The utilized MI optical structure is an enhanced Mach-Zehnder interferometer (MZI) with both arms incorporated with reflective mirrors. The light in the MI travels back and forth along the phase shifting waveguides and therefore doubles the effective length of light-carrier interaction. Improvement on the modulation efficiency is experimentally demonstrated. Our MI modulator shows high efficiency with a low figure of merit VπLπ of 0.72 V·cm~0.91V·cm under the bias of -1 V~-6V. High-speed modulations are performed at 25 Gbit/s and 30 Gbit/s with the extinction ratio of 8 dB and 6.5 dB, respectively, showing great potential in the future optical interconnects.

Up to Single Lane 200G Optical Interconnects with Silicon Photonic Modulator

Towards Single Lane 200G Optical Interconnects with Silicon Photonic Modulator

High-Baudrate SiP and InP Modulators for Data Center Interconnects

Up to 360 Gb/s Optical Interconnects with Ultra-high Bandwidth Thin Film Lithium Niobate Modulator

200 Gb/s Optical-Amplifier-Free IM/DD Transmissions Using a Directly Modulated O-Band DFB+R Laser Targeting LR Applications

High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

Single Lane 176gb/s Single Sideband PAM-4 Transmission over 400km with a Silicon Photonic Dual-Drive Mach-Zehnder Modulator.

SOI Based Optical Waveguide Devices with 44gbit/s High Speed

60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

Beyond 300gb/s from an Integrated Single-Channel Silicon Photonics Modulator Driver Combination

Net 8×250 Gbit/s/λ PAM6/8 Optical Interconnect Over High-Density Eight-Core Fiber and Low-Crosstalk Laser Direct Writing FI/FO Devices

8×250 Gbit/s PAM4 Transmission over 1 Km Single Mode Fiber with an All-Silicon LAN WDM Transmitter.

25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

30 Gbps high optical bandwidth silicon modulator

Development of Silicon Photonic Devices for Optical Interconnects

A monolithic 56 Gb/s silicon photonic pulse-amplitude modulation transmitter

44-Gb/s Silicon Microring Modulators Based on Zigzag Pn Junctions

Up to 168-Gb/s PAM-4 direct detection transmission with silicon travelling wave Mach-Zehnder modulator.

Up to 170Gbaud Optical Interconnects with Integrated CMOS-Silicon Photonics Transmitter

Highly Efficient Silicon Michelson Interferometer Modulators