Abstract:This article describes an energy‐efficient, low‐power CMOS temperature sensor suitable for portable applications. The sensor's front‐end circuitry is designed with a reference voltage (VREF ), complementary to absolute temperature (CTAT) voltage (VCTAT ), and ramp voltage generators. The ramp voltage (Vcap ) is produced by utilizing a current reference circuit. The ramp voltage is compared with independent and temperature‐dependent voltages to perform the voltage‐to‐frequency conversion. Conversion from frequency to digital output is achieved through an asynchronous counter with an on‐chip oscillator. The proposed design is realized in a 0.18‐μ m CMOS technology and attains a power usage of 604.4 nW at 27°C with an operating voltage of 0.5 V. Furthermore, it obtains an inaccuracy of +0.71/−0.73°C over ‐40°C to 125°C temperature range with an active area of 0.025 mm2. Moreover, the designed sensor circuit offers a resolution of 0.17°C with an energy conversion of 96.7 pJ. This article describes an energy‐efficient, low‐power CMOS temperature sensor suitable for portable applications. The sensor's front‐end circuitry is designed with a reference voltage (VREF ), complementary to absolute temperature (CTAT) voltage (VCTAT ), and ramp voltage generators. The ramp voltage (Vcap ) is produced by utilizing a current reference circuit. The ramp voltage is compared with independent and temperature‐dependent voltages to perform the voltage‐to‐frequency conversion. Conversion from frequency to digital output is achieved through an asynchronous counter with an on‐chip oscillator. The proposed design is realized in a 0.18‐μ m CMOS technology and attains a power usage of 604.4 nW at 27°C with an operating voltage of 0.5 V. Furthermore, it obtains an inaccuracy of +0.71/−0.73°C over −40°C to 125°C temperature range with an active area of 0.025 mm2. Moreover, the designed sensor circuit offers a resolution of 0.17°C with an energy conversion of 96.7 pJ.

A Low Power-Integrated Temperature Sensor Interface Circuit

A BJT-based SAR Temperature Sensor with a $5.12\ \text{pJ}\cdot \mathrm{K}^{2}$ Resolution FoM from -40 °C to 125 °C.

An All-Digital CMOS Temperature Sensor with a Wide Supply Voltage Range.

A BJT-based SAR Temperature Sensor with a 5.12 pJ.K-2 Resolution FoM from-40 degrees C to 125 degrees C

A BJT-based SAR Temperature Sensor with a $5.12\ \text{pj}\cdot \mathrm{k}^{2}$ Resolution FoM from −40 °C to 125 °C

A CMOS Temperature Sensor with Versatile Readout Scheme and High Accuracy for Multi-Sensor Systems

An Energy-Efficient BJT-Based Temperature Sensor with +/- 0.8 degrees C (3 sigma) Inaccuracy from-50 to 150 degrees C

A 0.26-Pj·k2 2400-Μm2 Digital Temperature Sensor in 55-Nm CMOS

A 0.8V Capacitively-Biased BJT-Based Temperature Sensor with an Inaccuracy of ±0.4°C ($\mathbf{3}\mathbf{\sigma}$) from −40°C to 125°C in 22nm CMOS

A 1.2V Self-Referenced Temperature Sensor with a Time-Domain Readout and a Two-Step Improvement on Output Dynamic Range

An Energy-Efficient Capacitively Biased Diode-Based Temperature Sensor in 55-nm CMOS

CMOS Digital Temperature Sensor with Self-Correcting Technique

A Dynamic-Biased Resistor-Based CMOS Temperature Sensor with a Duty-Cycle-Modulated Output

A novel low power wide supply voltage range CMOS temperature sensor with 0.2/0.5°C error from -20°C to 60°C

A Novel Low Power Wide Supply Voltage Range Cmos Temperature Sensor With-0.2/0.5 Degrees C Error From-20 Degrees C To 60 Degrees C

A 1770- $\mu$ M 2 Leakage-Based Digital Temperature Sensor with Supply Sensitivity Suppression in 55-Nm CMOS

An Energy‐Efficient Fully On‐Chip CMOS Temperature Sensor for Portable Applications With an RFoM of 2.79 pJ.K2

A 840-Μm2 Low-Power All-Mos Temperature Sensor Front-End with Real-Time Voltage Calibration

A 0.0014 Mm2 150 Nw CMOS Temperature Sensor with Nonlinearity Characterization and Calibration for the −60 to +40 °C Measurement Range

An On-Chip Smart Temperature Sensor Based on Band Gap and SAR ADC

Temperature Sensors Based on CMOS Sub-Threshold Characteristic