Abstract:Perovskite quantum dot light-emitting diodes (QLEDs) possess the characteristics of high color purity, precise color control, wide gamut, and solution processibility, which shows great prospects in displays and lightings. However, red CsPbI3 quantum dots (QDs) are prone to luminescence degradation due to the thermal non-equilibrium-induced phase transition and ligand loss during the purification process. The purification of CsPbI3 QDs is more difficult than that of CsPbBr3 QDs. Because the ligands on the surface of the quantum dots will be lost continuously during the purification process, resulting in aggregation and transformation to delta-CsPbI3 phase. Aiming at this problem, We prepared the CsPbI3 QDs through a hot-injection method at 180 degrees C. The original solution of the perovslcite QD also contains impurities such as octadecene solvent, oleic amine, and oleic acid ligand, which will seriously affect the photoelectric properties and destroy the film. So we used different flocculation solvents and dispersion solvents to collaboratively purify the QDs. At last, our work developed a mixed-solvent purification strategy with toluene and ethyl acetate, which can avoid the phase transition during the purification process and lead to pure cubic CsPbI3 QDs. But when we do not add the additional ligands in purification process, the photoluminescence quantum yield (PLQY) of QDs will be far less than 100%. In order to enhance the PLQY, a ligand compensation strategy of using oleylammonium iodide (OAmI) to control the surface state of QDs was proposed, which reduced the surface defects and solved the problem of luminescence quenching caused by ligand loss. We found that 400 mu L OAmI enabled quantum dots to have both high PLQY of 70% and excellent electrical properties. Under electrically driven, the exciton recombination probability was significantly increased, and the CsPbI3- based QLED achieved a maximum luminance of 3090 cd/m(2) and a maximum external quantum efficiency (EQE) of 15.67%. The proposed fine purification strategy of CsPbI3 QDs has an important guiding significance for the development of high-efficiency QD materials and high-performance optoelectronic devices.

Electron Delocalization in CsPbI3 Quantum Dots Enables Efficient Light‐Emitting Diodes with Improved Efficiency Roll‐Off

Electron Delocalization in CsPbI 3 Quantum Dots Enables Efficient Light‐Emitting Diodes with Improved Efficiency Roll‐Off

Bright CsPbI3 Perovskite Quantum Dot Light-Emitting Diodes with Top-Emitting Structure and a Low Efficiency Roll-Off Realized by Applying Zirconium Acetylacetonate Surface Modification.

Self-Assembled High Quality CsPbBr3 Quantum Dot Films Toward Highly Efficient Light-Emitting Diodes

Surface Ligand Engineering-Assisted CsPbI3 Quantum Dots Enable Bright and Efficient Red Light-Emitting Diodes with a Top-Emitting Structure

Surface Ligand Engineering for Near-Unity Quantum Yield Inorganic Halide Perovskite QDs and High-Performance QLEDs

Highly Bright and Low Turn-on Voltage CsPbBr3 Quantum Dot LEDs Via Conjugation Molecular Ligand Exchange

Surface‐Passivated Cesium Lead Halide Perovskite Quantum Dots: Toward Efficient Light‐Emitting Diodes with an Inverted Sandwich Structure

CsPbI3 Perovskite Quantum Dots: Fine Purification and Highly Efficient Light-emitting Diodes

CsPbBr3/CdS Core/Shell Structure Quantum Dots for Inverted Light-Emitting Diodes Application

Stable and efficient CsPbI3 quantum-dot light-emitting diodes with strong quantum confinement

Passivating CsPbBrxI3_x Quantum Dots Via Modifiers Film to Achieve Efficient Red Light-Emitting Diodes

Proton-Prompted Ligand Exchange to Achieve High-Efficiency CsPbI3 Quantum Dot Light-Emitting Diodes

Passivating CsPbBr I3− quantum dots via modifiers film to achieve efficient red light-emitting diodes

Synergistic Function of Doping and Ligand Engineering to Enhance the Photostability and Electroluminescence Performance of CsPbBr3 Quantum Dots

High-Efficiency Pure-Red CsPbI3 Quantum Dot Light-Emitting Diodes Enabled by Strongly Electrostatic Potential Solvent and Sequential Ligand Post-treatment Process

Ligand‐Pinning Induced Size Modulation of CsPbI3 Perovskite Quantum Dots for Red Light‐Emitting Diodes

Electroluminescent Solar Cells Based on CsPbI 3 Perovskite Quantum Dots

Efficient CsPbBr3 Perovskite Light-Emitting Diodes Via Novel Multi-Step Ligand Exchange Strategy Based on Zwitterionic Molecules.

Highly Efficient Silica-Coated Eu3+ and Mn2+ Doped CsPbCI3 Perovskite Quantum Dots for Application in Light-Emitting Diodes

Efficiency Enhancement of Perovskite CsPbBr3 Quantum Dot Light-emitting Diodes by Doped Hole Transport Layer