Abstract:A feasible ligand‐pinning‐assisted approach is reported to modulate the nucleation and growth of perovskite quantum dots (PQDs), allowing for size tuning of PQDs and therefore their spectroscopies. Meanwhile, the defective surface matrix of PQDs is effectively repaired, and the stacking orientation of PQD solids is also obviously ameliorated, leading to higher performance of PQD‐light emitting diodes being realized. Perovskite quantum dots (PQDs) show high potential for new‐generation light‐emitting diodes (LEDs) due to their outstanding optoelectronic properties. Even though the red PQD‐LEDs can be realized through mixing halide in the PQDs to tune their spectroscopies, the PQDs may suffer from phase separation under a high electric field, predominantly affecting LED applications. Herein, a ligand‐pinning‐assisted approach is reported to tune the spectroscopies of CsPbI3 PQDs, in which vinyl phosphonic acid (VPA) is applied as function ligands to regulate the nucleation and growth of PQDs during the synthesis. Systematically experimental studies and theoretical calculations are conducted to comprehensively understand the functions of the VPA ligands during the PQD synthesis, which reveals that the VPA ligands with high binding energy with Pb2+ cations could firmly anchor on the surface matrix of PQDs without desorption, regulating the growth of PQDs and thus resulting in tunable spectroscopies being realized. Meanwhile, VPA could also renovate the defective surface matrix of PQDs, substantially diminishing trap‐induced nonradiative recombination. Consequently, red PQD‐LEDs deliver a high external quantum efficiency of 22.83%, which is significantly improved compared with the control devices. This work provides a new avenue to tune the spectroscopies of PQDs toward high‐performing LEDs.

Surface Ligand Engineering-Assisted CsPbI3 Quantum Dots Enable Bright and Efficient Red Light-Emitting Diodes with a Top-Emitting Structure

Passivating CsPbBrxI3_x Quantum Dots Via Modifiers Film to Achieve Efficient Red Light-Emitting Diodes

Passivating CsPbBr I3− quantum dots via modifiers film to achieve efficient red light-emitting diodes

Efficient and Stable CF3PEAI-Passivated CsPbI3 QDs Toward Red LEDs.

Bright and Spectrally Stable Pure-Red CsPb(Br/I)3 Quantum Dot LEDs Realized by Synchronous Device Structure and Ligand Engineering

Efficient and Stable CF 3 PEAI-Passivated CsPbI 3 QDs toward Red LEDs

Ligand‐Pinning Induced Size Modulation of CsPbI3 Perovskite Quantum Dots for Red Light‐Emitting Diodes

Lowing surface steric hindrance of strongly-confined perovskite quantum dots enables efficient pure-red light-emitting diodes

Nucleophilic Reaction‐Enabled Chloride Modification on CsPbI3 Quantum Dots for Pure Red Light‐Emitting Diodes with Efficiency Exceeding 26 %

Spectrally Stable and Efficient Pure Red CsPbI 3 Quantum Dot Light-Emitting Diodes Enabled by Sequential Ligand Post-Treatment Strategy

Spectrally Stable and Efficient Pure Red CsPbI3 Quantum Dot Light-Emitting Diodes Enabled by Sequential Ligand Post-Treatment Strategy

Stable and efficient CsPbI3 quantum-dot light-emitting diodes with strong quantum confinement

Electron Delocalization in CsPbI3 Quantum Dots Enables Efficient Light‐Emitting Diodes with Improved Efficiency Roll‐Off

Influence of Surface Passivation on Perovskite CsPbBr1.2I1.8 Quantum Dots and Application of High Purity Red Light-Emitting Diodes

Suppressing Ion Migration of Mixed‐Halide Perovskite Quantum Dots for High Efficiency Pure‐Red Light‐Emitting Diodes

Synchronously Polishing the Lead-Rich Surface and Passivating Surface Defects of CsPb(Br/I)3 Quantum Dots for High-Performance Pure-Red PeLEDs

Surface‐Passivated Cesium Lead Halide Perovskite Quantum Dots: Toward Efficient Light‐Emitting Diodes with an Inverted Sandwich Structure

72‐1: Enhancing the Efficiency of Perovskite Quantum Dot Light‐Emitting Diodes Through Surface Engineer with Organic Small Molecule Ligands

Synergistic passivation of high stability CsPb(Br/I) 3 perovskite quantum dots with double ligands for WLEDs

Electron Delocalization in CsPbI 3 Quantum Dots Enables Efficient Light‐Emitting Diodes with Improved Efficiency Roll‐Off

Synergistic effect of indium doping and chlorine surface passivation on CsPbI<sub>3</sub> perovskite quantum dots for deep-red light-emitting devices