Influence of Surface Passivation on Perovskite CsPbBr1.2I1.8 Quantum Dots and Application of High Purity Red Light-Emitting Diodes

Lung-Chien Chen,Yen-Hung Tien,Jianjun Tian
DOI: https://doi.org/10.21203/rs.3.rs-796798/v1
2021-08-12
Abstract:Abstract In this work, trioctylphosphine oxide (TOPO) ligand is employed to improve the quality of CsPbBr 1.2 I 1.8 quantum dots (QDs) films. Lead nitrate (Pb(NO 3 ) 2 ) is also used to passivate the surface of the films. The study of ligand and surface passivation on the luminous efficiency of red light-emitting diode (LED) is discussed. The CsPbBr 1.2 I 1.8 QDs films co-doped with TOPO and Pb(NO 3 ) 2 can effectively improve the performance of the CsPbBr 1.2 I 1.8 QDs LEDs due to reduction of non-radiation recombination of the carriers and smooth morphology in the active layer, thus improving the injection and transportation capabilities of carriers. As a result, the highest luminosity and current efficiency are 502.7 cd/m 2 and 0.175 cd/A, respectively.
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