Abstract:The interest in nanowire photodetectors stems from their potential to improve the performance of a variety of devices, including solar cells, cameras, sensors, and communication systems. Implementing devices based on nanowire ensembles requires a planarization process which must be conceived to preserve the advantages of the nanowire geometry. This is particularly challenging in the ultraviolet (UV) range, where spin coating with hydrogen silsesquioxane (HSQ) appears as an interesting approach in terms of transmittance and refractive index. Here, we report a comprehensive study on UV photodetectors based on GaN or AlGaN/AlN nanowire ensembles encapsulated in HSQ. We show that this material is efficient for passivating the nanowire surface, it introduces a compressive strain in the nanowires and preserves their radiative efficiency. We discuss the final performance of planarized UV photodetectors based on three kinds of nanowire ensembles: (i) non-intentionally-doped (nid) GaN nanowires, (ii) Ge-doped GaN nanowires, and (iii) nid GaN nanowires terminated with an AlGaN/AlN superlattice. The incorporation of the superlattice allows tuning the spectral response with bias, which can enhance the carrier collection from the AlGaN/AlN superlattice or from the GaN stem. In all the cases, the performance of the planarized devices remains determined by the nanowire nature, since their characteristics in terms of linearity and spectral selectivity are closer to those demonstrated in single nanowires than those of planar devices. Thus, the visible rejection is several orders of magnitude and there is no indication of persistent photocurrent, which makes all the samples suitable for UV-selective photodetection applications.

Boosted Ultraviolet Photodetection of AlGaN Quantum-Disk Nanowires Via Rational Surface Passivation

Effective surface passivation of GaAs nanowire photodetectors by a thin ZnO capping

Enhanced near-UV responsivity of AlGaN/GaN HEMT based photodetectors by nanohole etching of barrier surface

Structural Designs of AlGaN/GaN Nanowire-Based Photoelectrochemical Photodetectors: Carrier Transport Regulation in GaN Segment As Current Flow Hub

Pt/AlGaN Nanoarchitecture: Toward High Responsivity, Self-Powered Ultraviolet-Sensitive Photodetection

Ultralow Dark-Current and Superhigh Detectivity Ultraviolet Photodetector Based on Freestanding GaN Nanobelt Array

AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers

Enhanced Photoresponse of Single GaN Microwire Ultraviolet Photodetectors by Heteroepitaxial AlN Coating Layer

Broadband ultraviolet plasmonic enhanced AlGaN/GaN heterojunction photodetectors with close-packed Al nanoparticle arrays

Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture

AlGaN-based metal–semiconductor–metal photodiodes fabricated with nonplanar structure geometry for ultraviolet light detection

A High Responsivity and Controllable Recovery Ultraviolet Detector Based on a WO3 Gate AlGaN/GaN Heterostructure with an Integrated Micro-Heater

Synthesis of InAl-alloyed Ga2O3 nanowires for self-powered ultraviolet detectors by a CVD method

Tuning the Charge Transfer Dynamics of the Nanostructured GaN Photoelectrodes for Efficient Photoelectrochemical Detection in the Ultraviolet Band

A High Quantum Efficiency Narrow-Band UV-B AlGaN P-I-n Photodiode with Polarization Assistance

Photocarrier transport reconstruction and dramatical performance enhancement in ultrawide-bandgap ε-Ga 2 O 3 photodetectors via surface defect passivation

High Quantum Efficiency Back-Illuminated AlGaN-Based Solar-Blind Ultraviolet P—i—n Photodetectors

Polarization-Assisted AlGaN Heterostructure-Based Solar-Blind Ultraviolet MSM Photodetectors with Enhanced Performance

Fabrication of freestanding GaN nanobelts with enhanced ultraviolet photoresponse performance

Improved electro-optical and photoelectric performance of GaN-based micro-LEDs with an atomic layer deposited AlN passivation layer.

High-Performance Self-Driven Single GaN-Based p–i–n Homojunction One-Dimensional Microwire Ultraviolet Photodetectors