Enhanced near-UV responsivity of AlGaN/GaN HEMT based photodetectors by nanohole etching of barrier surface

Ahmed S. Razeen,Dharmraj Kotekar-Patil,Eric Xiaosong Tang,Gao Yuan,Jesper Ong,K. Radhakrishnan,Sudhiranjan Tripathy

DOI: https://doi.org/10.1016/j.mssp.2024.108115

IF: 4.1

2024-01-13

Materials Science in Semiconductor Processing

Abstract:We demonstrate the fabrication of unpatterned and nanohole patterned AlGaN/GaN High electron mobility transistor-based metal-semiconductor-metal UV photodetectors. Device with shallow, non-dense periodic arrays of 200 nm diameter and 20 nm deep nanoholes on the AlGaN barrier surface shows ∼ 103 photo-to-dark current ratio and responsivity of 1.3×105 A/W for 325 nm wavelength at 5 V bias. Nanohole etching on AlGaN barrier surface is shown to enhance the spectral response of the devices in the near UV (NUV) range, with clear UV/Visible cut-off. The enhancement is attributed to light trapping in nanoholes which prolonged light path and enhanced absorption in the active region. External quantum efficiency of the devices exceeded 100 %, due to internal gain mechanism of the device. Two spectral responsivity peaks occurred at wavelengths correspond to AlGaN and GaN bandgaps. The device performance shows the importance of embedding GaN native nanostructures to enhance UV detection.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied