Abstract:Novel materials suitable for optoelectronics are of great interest due to limited and diminishing energy resources and the movement toward a green earth. We report a simple film growth method to tune the S composition, x from 1 to 2 in semiconductor ultrathin SnSx films on quartz substrates, that is, single phase SnS, single phase SnS2, and mixed phases of both SnS and SnS2 by varying the sulfurization temperature from 150 to 500 degrees C. Due to the ultrathin nature of the SnSx films, their structural and optical properties are characterized and crosschecked by multiple surface-sensitive techniques. The grazing incidence X-ray diffraction (GIXRD) shows that the single phase SnS forms at 150 degrees C, single phase SnS2 forms at 350 degrees C and higher, and mixed phases of SnS and SnS2 form at temperature between. GIXRD shows structures of SnS film and SnS2 film are orthorhombic and 2H hexagonal, respectively. To complement the GIXRD, the reflection high energy electron diffraction pattern analysis shows that both pure phases are polycrystalline on the surface. Raman spectra support existence of pure phase SnS, pure phase SnS2, and mixed phases of SnS and SnS2. X-ray photoelectron spectroscopy reveals that the near surface stoichiometry of both single phase SnS and single phase SnS2 are close to Sn/S ratios of 1:1 and 1:2, respectively. UV vis spectroscopy shows the optical absorption coefficient of SnS film is higher than 10(5) cm(-1) above the optical bandgap of 1.38 +/- 0.02 eV, an ideal optical absorber. A two-terminal device made of SnS film grown on SiO2 substrates shows good photoresponse. The SnS2 has an optical bandgap of 2.21 +/- 0.02 eV. A photoluminescence (PL) peak of SnS2 film is observed at similar to 542 nm. Time-resolved PL of the single phase ultrathin SnS2 film indicates a carrier lifetime of 1.62 ns, longer than sub nanosecond lifetime from multilayer SnS2. Our comprehensive results show that ultrathin SnS and SnS2 films have the required properties for potential photodetectors and solar cell applications but consume much less material as compared with current thin film devices.

Phase-controlled synthesis of SnS<sub>2</sub> and SnS flakes and photodetection properties

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Facile Synthesis of Tin Monosulfide Nanosheets Via Physical Vapour Deposition and Their Near-Infrared Photoresponse

High-performance photodetectors based on two-dimensional tin(II) sulfide (SnS) nanoflakes

Hydrothermal Synthesis and Fast Photoresponsive Characterization of SnS2 Hexagonal Nanoflakes

Ultrafast Broadband Photodetector Based on SnS Synthesized by Hydrothermal Method

Enhanced Photodetection Performance Of Schottky Pt/Sns2/Al And Au/Sns2/Al Photodetectors

Wavelength dependent UV-Vis photodetectors from SnS2 flakes

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Tuning the Phase and Optical Properties of Ultrathin SnSx Films

Synthesis of 2D Tin Sulfide [SnS(x=1,2)] Layers by Proximity Evaporation: Thermodynamic Phase Tuning and Optical Photoresponsivity

Large‐Size Growth of Ultrathin SnS2 Nanosheets and High Performance for Phototransistors

Enhanced Photoresponse of Indium-Doped Tin Disulfide Nanosheets.

Solution Synthesis of Ultrathin Single-Crystalline SnS Nanoribbons for Photodetectors Via Phase Transition and Surface Processing.

Out‐of‐Plane Homojunction Enabled High Performance SnS2 Lateral Phototransistor

Colloidal Tin Sulfide Nanosheets: Formation Mechanism, Ligand-mediated Shape Tuning and Photo-detection

Layer‐Dependent Optoelectronic Properties of 2D Van Der Waals SnS Grown by Pulsed Laser Deposition

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Giant‐Enhanced SnS2 Photodetectors with Broadband Response Through Oxygen Plasma Treatment

High Photoresponsivity and Response Speed of Visible‐Light Photodetectors Based on Tin Disulfide/Indium‐Doped Tin Disulfide Homostructures

Visible Phototransistors Based on Vertical Nanolayered Heterostructures of SnS/SnS2 P-N and SnSe2/SnS2 N-N Nanoflakes