Spatial Modulation of Nanopattern Dimensions by Combining Interference Lithography and Grayscale-Patterned Secondary Exposure

Zhuofei Gan,Hongtao Feng,Liyang Chen,Siyi Min,Chuwei Liang,Menghong Xu,Zijie Jiang,Zhao Sun,Chuying Sun,Dehu Cui,Wen-Di Li
DOI: https://doi.org/10.1038/s41377-022-00774-z
2022-01-01
Light Science & Applications
Abstract:Functional nanostructures are exploited for a variety of cutting-edge fields including plasmonics, metasurfaces, and biosensors, just to name a few. Some applications require nanostructures with uniform feature sizes while others rely on spatially varying morphologies. However, fine manipulation of the feature size over a large area remains a substantial challenge because mainstream approaches to precise nanopatterning are based on low-throughput pixel-by-pixel processing, such as those utilizing focused beams of photons, electrons, or ions. In this work, we provide a solution toward wafer-scale, arbitrary modulation of feature size distribution by introducing a lithographic portfolio combining interference lithography (IL) and grayscale-patterned secondary exposure (SE). Employed after the high-throughput IL, a SE with patterned intensity distribution spatially modulates the dimensions of photoresist nanostructures. Based on this approach, we successfully fabricated 4-inch wafer-scale nanogratings with uniform linewidths of <5% variation, using grayscale-patterned SE to compensate for the linewidth difference caused by the Gaussian distribution of the laser beams in the IL. Besides, we also demonstrated a wafer-scale structural color painting by spatially modulating the filling ratio to achieve gradient grayscale color using SE.
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