Abstract:An anion exchange process using HBr is developed and used to achieve pure‐red emitting CsPbI3‐xBrx quantum dots, with 1‐dodecanethiol ligands used to suppress halide ion migration. The light‐emitting diodes based on the quantum dos show a stable electroluminescence peak at 637 nm, and a maximum external quantum efficiency of 21.8% with an average value of 20.4%. Perovskite‐based light‐emitting diodes (PeLEDs) with a mixed halide composition can be used to obtain the "pure red" emission, i.e., in the 620–650 nm range, required for high‐definition displays. However, fast halide ion migration induces phase separation in these materials under electric fields, resulting in poor spectral stability and low efficiency. Herein, a method for producing mixed halide CsPbI3‐xBrx quantum dots (QDs) is reported in which ion migration is suppressed. The mixed halide composition is first achieved by anion exchange between CsPbI3 QDs and hydrobromic acid (HBr), during that the bromine ions efficiently passivate the iodine vacancies of the QDs. The original oleic acid ligands are then exchanged for 1‐dodecanethiol (1‐DT), which suppresses halide ion migration via the strong binding of the sulfhydryl group with the QD surface. PeLEDs based on these QDs exhibit a pure‐red electroluminescence (EL) peak at 637 nm, a maximum external quantum efficiency (EQE) of 21.8% with an average value of 20.4%, a peak luminance of 2653 cd m−2, and low EQE decease with increasing luminance. The EL spectrum of these devices is stable even at 6.7 V and they have an EQE half‐life of 70 min at an initial luminance of 150 cd m−2.

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ZnI2 Post-Processing of CsPbBr3 Quantum Dots for Red, Stable, and Low-Threshold Amplified Spontaneous Emission

ZnI 2 post-processing of CsPbBr 3 quantum dots for red, stable, and low-threshold amplified spontaneous emission

Surface Ligand Engineering-Assisted CsPbI3 Quantum Dots Enable Bright and Efficient Red Light-Emitting Diodes with a Top-Emitting Structure

High-performance all-inorganic CsPbBr3 quantum dots with a low-threshold amplified spontaneous emission

Ultrastable CsPbBr Perovskite Quantum Dot and Their Enhanced Amplified Spontaneous Emission by Surface Ligand Modification.

Highly Stable CsPbBr3 Quantum Dots by Silica-Coating and Ligand Modification for White Light-Emitting Diodes and Visible Light Communication

Surface Ligand Modified Cesium Lead Bromide/silica Sphere Composites for Low-Threshold Upconversion Lasing

Bright and Spectrally Stable Pure-Red CsPb(Br/I)3 Quantum Dot LEDs Realized by Synchronous Device Structure and Ligand Engineering

Passivating CsPbBrxI3_x Quantum Dots Via Modifiers Film to Achieve Efficient Red Light-Emitting Diodes

Stable and efficient CsPbI3 quantum-dot light-emitting diodes with strong quantum confinement

Passivating CsPbBr I3− quantum dots via modifiers film to achieve efficient red light-emitting diodes

Few-Nanometer-Sized α-CsPbI3 Quantum Dots Enabled by Strontium Substitution and Iodide Passivation for Efficient Red-Light Emitting Diodes

Room temperature synthesis of stable silica-coated CsPbBr 3 quantum dots for amplified spontaneous emission

Suppressing Ion Migration of Mixed‐Halide Perovskite Quantum Dots for High Efficiency Pure‐Red Light‐Emitting Diodes

Rapid Large-Scale Synthesis of Highly Emissive Solid-State Metal Halide Perovskite Quantum Dots Across the Full Visible Spectrum

Synergistic passivation of high stability CsPb(Br/I) 3 perovskite quantum dots with double ligands for WLEDs

Preparation of Ultrastable and Highly Luminescent CsPbBr3 Quantum Dots by a Synergistic Internal and External Strategy of Ligand Modification and Silica Coating

Highly luminescent and stable CsPbBr3 perovskite quantum dots modified by phosphine ligands

Postsynthetic Surface Trap Removal of CsPbX3 (X = Cl, Br, or I) Quantum Dots Via a ZnX2/Hexane Solution Toward an Enhanced Luminescence Quantum Yield