Abstract:Perovskite-type lead halides exhibit promising performances in optoelectronic applications, for which lasers are one of the most promising applications. Although the bulk structure has some advantages, perovskite has additional advantages at the nanoscale owing to its high crystallinity given by a lower trap density. Although the nanoscale can produce efficient light emission, its comparatively poor chemical and colloidal stability limits further development of devices based on this material. Nevertheless, bulk perovskites are promising as optical amplifiers. There has been some developmental progress in the study of optical response and amplified spontaneous emission (ASE) as a benchmark for perovskite bulk phase laser applications. Therefore, to achieve high photoluminescence quantum yields (PLQYs) and large optical gains, material development is essential. One of the aspects in which these goals can be achieved is the incorporation of a bulk structure of high-quality crystallization films based on inorganic perovskite, such as cesium lead halide (CsPb(Br/Cl)3), in polymethyl methacrylate (PMMA) polymer and encapsulation with the optimal thickness of the polymer to achieve complete surface coverage, prevent degradation, surface states, and surface defects, and suppress emission at depth. Sequential evaporation of the perovskite precursors using a single-source thermal evaporation technique (TET) effectively deposited two layers. The PL and ASEs of the bare and modified films with a thickness of 400 nm PMMA were demonstrated. The encapsulation layer maintained the quantum yield of the perovskite layer in the air for more than two years while providing added optical gain compared to the bare film. Under a picosecond pulse laser, the PL wavelength of single excitons and ASE wavelength associated with the stimulated decay of bi-excitons were achieved. The two ASE bands were highly correlated and competed with each other; they were classified as exciton and bi-exciton recombination, respectively. According to the ASE results, bi-exciton emission could be observed in an ultrastable CsPb(Br/Cl)3 film modified by PMMA with a very low excitation energy density of 110 µJ/cm2. Compared with the bare film, the ASE threshold was lowered by approximately 5%. A bi-exciton has a binding energy (26.78 meV) smaller than the binding energy of the exciton (70.20 meV).

Ultrastable CsPbBr Perovskite Quantum Dot and Their Enhanced Amplified Spontaneous Emission by Surface Ligand Modification.

Long-term Air-Stable Amplified Spontaneous Emission in Quasi-2D Perovskite Films Through Ligand Engineering

High-performance all-inorganic CsPbBr3 quantum dots with a low-threshold amplified spontaneous emission

Highly luminescent and stable CsPbBr3 perovskite quantum dots modified by phosphine ligands

Ligand-mediated CsPbBr x I 3− x /SiO 2 quantum dots for red, stable and low-threshold amplify spontaneous emission

Single Halide Perovskite/Semiconductor Core/Shell Quantum Dots with Ultrastability and Nonblinking Properties

Synergistic function of doping and ligand engineering to enhance the photostability and electroluminescence performance of CsPbBr 3 quantum dots

Stability and spectroscopic analysis of CsPbBr3 quantum dots modified with 2-n-Octyl-1-dodecanol

Efficient and stable Cyan-emitting CsPbBr3 Quantum Dots with Zinc Bromide Inorganic Passivation

Study on the mechanism of organic ligand-assisted synthesis of superwater-stable CsPbBr 3 quantum dots

Highly Photostable Mixed‐Halide Blue CsPbBr1.5Cl1.5 Perovskite Quantum Dots via Surface Treatment

Passivating CsPbBrxI3_x Quantum Dots Via Modifiers Film to Achieve Efficient Red Light-Emitting Diodes

Surface Passivation for Promotes Bi-Excitonic Amplified Spontaneous Emission in CsPb(Br/Cl)3 Perovskite at Room Temperature

Luminescence and Stability Enhancement of CsPbBr 3 Perovskite Quantum Dots through Surface Sacrificial Coating

In Situ Compositing CsPbBr3 with Exfoliated Layered-Perovskite CsCa2Ta3O10: Interfacial Interaction and Enhanced Stability

Universal Surface Repairing Strategy Enabling Suppressed Auger Recombination in CsPbBr3 Perovskite Quantum Dots for Low Threshold Lasing in a Superlattice Microcavity

Surface Modification Strategy Synthesized CsPbX3 Perovskite Quantum Dots with Excellent Stability and Optical Properties in Water

Aromatic Carboxylic Acid Ligand Management for CsPbBr 3 Quantum Dot Light-Emitting Solar Cells

Surface Reconstruction of CsPbBr 3 Nanocrystals by the Ligand Engineering Approach for Achieving High Quantum Yield and Improved Stability

Highly efficient and stable CsPbBr3 perovskite quantum dots by encapsulation in dual-shell hollow silica spheres for WLEDs

Capping Ligand Engineering Enables Stable CsPbBr3 Perovskite Quantum Dots toward White-Light-Emitting Diodes.