Abstract:Perovskite-type lead halides exhibit promising performances in optoelectronic applications, for which lasers are one of the most promising applications. Although the bulk structure has some advantages, perovskite has additional advantages at the nanoscale owing to its high crystallinity given by a lower trap density. Although the nanoscale can produce efficient light emission, its comparatively poor chemical and colloidal stability limits further development of devices based on this material. Nevertheless, bulk perovskites are promising as optical amplifiers. There has been some developmental progress in the study of optical response and amplified spontaneous emission (ASE) as a benchmark for perovskite bulk phase laser applications. Therefore, to achieve high photoluminescence quantum yields (PLQYs) and large optical gains, material development is essential. One of the aspects in which these goals can be achieved is the incorporation of a bulk structure of high-quality crystallization films based on inorganic perovskite, such as cesium lead halide (CsPb(Br/Cl)3), in polymethyl methacrylate (PMMA) polymer and encapsulation with the optimal thickness of the polymer to achieve complete surface coverage, prevent degradation, surface states, and surface defects, and suppress emission at depth. Sequential evaporation of the perovskite precursors using a single-source thermal evaporation technique (TET) effectively deposited two layers. The PL and ASEs of the bare and modified films with a thickness of 400 nm PMMA were demonstrated. The encapsulation layer maintained the quantum yield of the perovskite layer in the air for more than two years while providing added optical gain compared to the bare film. Under a picosecond pulse laser, the PL wavelength of single excitons and ASE wavelength associated with the stimulated decay of bi-excitons were achieved. The two ASE bands were highly correlated and competed with each other; they were classified as exciton and bi-exciton recombination, respectively. According to the ASE results, bi-exciton emission could be observed in an ultrastable CsPb(Br/Cl)3 film modified by PMMA with a very low excitation energy density of 110 µJ/cm2. Compared with the bare film, the ASE threshold was lowered by approximately 5%. A bi-exciton has a binding energy (26.78 meV) smaller than the binding energy of the exciton (70.20 meV).

Universal Surface Repairing Strategy Enabling Suppressed Auger Recombination in CsPbBr3 Perovskite Quantum Dots for Low Threshold Lasing in a Superlattice Microcavity

Single Halide Perovskite/Semiconductor Core/Shell Quantum Dots with Ultrastability and Nonblinking Properties

Fabry-Perot Mode-Limited High-Purcell-Enhanced Spontaneous Emission from In Situ Laser-Induced CsPbBr3 Quantum Dots in CsPb2Br5 Microcavities

Surface Halogen Compensation for Robust Performance Enhancements of CsPbX3 Perovskite Quantum Dots

Quantum‐Defect‐Minimized, Three‐Photon‐Pumped Ultralow‐Threshold Perovskite Excitonic Lasing

Surface Passivation for Promotes Bi-Excitonic Amplified Spontaneous Emission in CsPb(Br/Cl)3 Perovskite at Room Temperature

Ultrastable and Low-Threshold Two-Photon-Pumped Amplified Spontaneous Emission from CsPbBr3/Ag Hybrid Microcavity

Ligand Engineering and Recrystallization of Perovskite Quantum‐Dot Thin Film for Low‐Threshold Plasmonic Lattice Laser

Surface Vertical Multi-Emission Laser with Distributed Bragg Reflector Feedback from CsPbI3 Quantum Dots

Stable continuous-wave lasing from discrete cesium lead bromide quantum dots embedded in a microcavity

Amplified Spontaneous Emission with a Low Threshold from Quasi‐2D Perovskite Films via Phase Engineering and Surface Passivation

Perovskite Quantum Dots Lasing in Double-Heterostructure through Energy Transfer

Stable Random Laser of Perovskite Quantum Dots Based on SiO2-QDs-SiO2 Composite Nanostructure

Lasing from solution-processed CsPbBr3 octahedral resonators

Ligand-mediated CsPbBr x I 3− x /SiO 2 quantum dots for red, stable and low-threshold amplify spontaneous emission

Stable and Ultrafast Blue Cavity‐Enhanced Superfluorescence in Mixed Halide Perovskites

Tuning Photoluminescence of CsPbBr3 Quantum Dots through Plasmonic Nanofingers

Low‐Threshold, Highly Stable Colloidal Quantum Dot Short‐Wave Infrared Laser enabled by Suppression of Trap‐Assisted Auger Recombination

Suppressing Auger Recombination in Cesium Lead Bromide Perovskite Nanocrystal Film for Bright Light-Emitting Diodes

High-performance all-inorganic CsPbBr3 quantum dots with a low-threshold amplified spontaneous emission

Narrow linewidth CsPbBr3 perovskite quantum dots microsphere lasers