Abstract:Exploration of novel resistive switching materials attracts attention to replace conventional Si-based transistors and to achieve neuromorphic computing that can surpass the limit of the current Von-Neumann computing for the time of Internet of Things (IoT). Materials priorly used to serve in batteries have demonstrated metal-insulator transitions upon an electrical biasing due to resulting compositional change. This property is desirable for future resistive switching devices. Amorphous lithium lanthanum titanate (a-LLTO) was originally developed as a solid-state electrolyte with relatively high lithium ionic conductivity and low electronic conductivity among oxide-type solid electrolytes. However, it has been suggested that electric conductivity of a-LLTO changes depending on oxygen content. In this work, the investigation of switching behavior of a-LLTO was conducted by employing a range of voltage sweep techniques, ultimately establishing a stable and optimal operating condition within the voltage window of -3.5 V to 3.5 V. This voltage range effectively balances the desirable trait of a substantial resistance change by three orders of magnitude with the imperative avoidance of LLTO decomposition. This switching behavior is also confirmed at nanodevice of Ni/LLTO/Ni through in-situ biasing inside focused-ion beam/scanning electron microscope (FIB-SEM). Experiment and computation with different LLTO composition shows that LLTO has two distinct conductivity states due to Ti reduction. The distribution of these two states is discussed using simplified binary model, implying the conductive filament growth during low resistance state. Consequently, our study deepens understanding of LLTO electronic properties and encourages the interdisciplinary application of battery materials for resistive switching devices.

Electric Field Induced Mott Transition and Bipolar Resistive Switching in La2Ti2O7-x Thin Film

Relationship Between Resistive Switching and Mott Transition in Atomic Layer Deposition Prepared La2Ti2O7-x Thin Film

Comment on "Bipolar Resistive Switching in Lanthanum Titanium Oxide and an Increased On/Off Ratio Using an Oxygen-Deficient ZnO Interlayer"

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Electrode-Dependent Resistive Switching Characteristics of Sr(Ti,Sn)O-3 Thin Films

Unipolar Resistive Switching Characteristics And Scaling Behaviors In La2mo2o9 Thin Films For Nonvolatile Memory Applications

Interfacial Resistive Switching Properties in Ti/La0.7Ca0.3MnO3/Pt Sandwich Structures

Elucidating Dynamic Conductive State Changes in Amorphous Lithium Lanthanum Titanate for Resistive Switching Devices

Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts.

Morphology control of volatile resistive switching in La0.67Sr0.33MnO3 thin films on LaAlO3 (001)

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

Unusual Resistive Switching Induced by Voltage in La0.7Sr0.3MnO3 Thin Films

Atomic‐Scale Phase Transformation in Perovskite LaCoOx Resistive Switching Memristive Devices

Current‐Induced Planar Resistive Switching Mediated by Oxygen Migration in NiO/Pt Bilayer

Resistive Switching Effect In Titanium Oxides

Resistive switching of Pt/Nb: SrTiO[math] and La[math]Sr[math]MnO[math] /Nb:SrTiO[math] structures

Bipolar resistive switching in amorphous titanium oxide thin films

In situ TEM Observation of Resistance Switching in Titanate Based Device

Oxygen Electromigration Induced Nonvolatile Resistance Switching at Ag/La2cuo4+X Interface

Lithium Incorporation Enhanced Resistive Switching Behaviors in Lithium Lanthanum Titanium Oxide-Based Heterostructure

Bipolar Resistive Switching Behavior of La0.5Sr0.5CoO3−σ Films for Nonvolatile Memory Applications