Abstract:To establish the conditions for chemically induced enhancement of solid solubility in the immiscible systems. In the present study, Ag−Co and Ag−Co−Si alloys have been synthesized by ball milling. The trend of phase evolution has been studied by x‐ray diffraction, differential thermal analyzer, transmission electron microscopy and magnetic analysis. This present work concerns the effect of ternary addition of non‐metallic and diamagnetic silicon on the metastable solubility of the immiscible silver‐cobalt system during the course of ball milling, annealing of the ball milled samples and the corresponding magnetic properties. It should be noted that silicon has a smaller goldsmidt radius (111 pm) than silver (144 pm) and silicon+4 has more valence electrons than silver+1. Keeping the objectives of the current study in mind, silicon may thus be considered as an option for ternary addition, in contrast to metallic components. An attempt has been made to examine the phase changes that occurred in the 50 silver‐40 cobalt‐10 silicon (atom percent) system during ball milling and the subsequent isothermal annealing of the ball milled product. Phase evolution during mechanical alloying and isothermal annealing is identified by means of x‐ray diffraction, differential thermal analysis, high resolution transmission electron microscopy and magnetic measurements. The addition of silicon facilitates cobalt's formation of a metastable alloy with copper after 50 hours of ball milling. Annealing significantly improves the magnetic characteristics of materials that have been ball milled; the optimal combination of magnetic properties was obtained after an hour of annealing at 550 °C.

Nucleation of CoSi/sub 2/ and MnSi/sub 1.7/ in the Co/Mn/Si ternary system

Nucleation of CoSi2 and MnSi1.7 in the Co/Mn/Si ternary system

Mixing Entropy and the Nucleation of Silicides: Ni–Pd–Si and Co–Mn–Si Ternary Systems

Formation and properties of ternary silicide (Co/sub x/Ni/sub 1-x/)Si/sub 2/ thin films

Experimental and First principle calculation of Co_xNi_{(1-x)}Si solid solution structural stability

Formation and properties of ternary silicide (CoxNi1-x)Si2 thin films

SiO x mediated epitaxial ternary silicide (Co 1-xNi x) Si 2

Extensive Raman spectroscopic investigation of ultrathin Co 1-xNi xSi 2 films grown on Si(100)

An atomic force microscopy study of thin CoSi2 films formed by solid state reaction

Effect of Si on the Solidification Segregation Behavior of a New Ni–Co‐Based Superalloy

Surface and interface morphology of CoSi2 films formed by multilayer solid-state reaction

Phase Formation and Film Morphology of Ultrathin Co1−xNixSi2 Films

The Influence of Ti and TiN on the Thermal Stability of CoSi2.

Schottky Barrier Characteristics of Ternary Silicide Co1−xNixSi2 on N-Si(1 0 0) Contacts Formed by Solid Phase Reaction of Multilayer

I-V-T studies on ternary silicide Co1-xNixSi2/n-Si Schottky contacts

The influence of Ti: Si3N4 ratio on the microstructure evolution of Ti–Si3N4 reaction in Cu melts

Effects of Co/Si atomic ratio on hardness and electrical conductivity of Cu‐Co‐Si Alloys

The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture

Solubility and magnetic properties of Ag−Co−Si alloy synthesized by mechanical alloying and annealingLöslichkeit und magnetische Eigenschaften von durch mechanisches Legieren und Glühen hergestellten Ag−Co−Si‐Legierungen

Effects of Co/Si Atomic Ratio on Hardness and Electrical Conductivity of Cu-Co-Si Alloys