Phase Formation and Film Morphology of Ultrathin Co1−xNixSi2 Films

Zhiwei Zhu,Xindong Gao,Yinghua Piao,Cheng Hu,Zhijun Qiu,Zhi-Bin Zhang,Dongping Wu,Shi-Li Zhang
DOI: https://doi.org/10.1116/1.4732736
2012-01-01
Abstract:The formation of Co1−xNixSi2 films was investigated using Co1−xNix layers (1–8 nm thick, 1 ≥ x ≥ 0) sputter-deposited onto Si(100). The critical Co1−xNix thickness below which Co1−xNixSi2 films directly grow is found to be x-dependent; it increases from 1–2 nm for Co and Co0.75Ni0.25 to 4–6 nm for Co0.5Ni0.5, and from 3–4 nm for Ni to 6–8 nm for Co0.25Ni0.75. The Co1−xNixSi2 growth tends to occur at lower temperatures with decreasing t and/or increasing x. Although ultrathin, the Co1−xNixSi2 films can remain morphologically stable at 900 °C. Entropy of mixing coupled with lattice matching is discussed as being responsible for the enhanced Co1−xNixSi2 growth and stability.
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