Abstract:InAs1-x Sb x nanowires show promise for use in nanoelectronics, infrared optoelectronics and topological quantum computation. Such applications require a high degree of growth control over the growth direction, crystal quality and morphology of the nanowires. Here, we report on the silver-assisted growth of InAs1-x Sb x nanowires by molecular-beam epitaxy for the first time. We find that the growth parameters including growth temperature, indium flux and substrate play an important role in nanowire growth. Relatively high growth temperatures and low indium fluxes can suppress the growth of non-[111]-oriented nanowires on Si (111) substrates. Vertically aligned InAs1-x Sb x nanowires with high aspect ratios can be achieved on GaAs (111)B substrates. Detailed structural studies suggest that high-quality InAs1-x Sb x nanowires can be obtained by increasing antimony content. Silver-indium alloy segregation is found in ternary alloy InAs1-x Sb x nanowires, and it plays a key role in morphological evolution of the nanowires. Our work provides useful insights into the controllable growth of high-quality III–V semiconductor nanowires.

Influence of growth temperature and V/III ratio on Au-assisted In x Ga 1−x As nanowires

Influence of growth temperature and V/III ratio on Au-assisted InxGa1−xAs nanowires

The effect of V/III ratio on the morphology and structure of GaAs nanowires by MOCVD

Growth of III-V Nanowires and Nanowire Heterostructures by Metalorganic Chemical Vapor Deposition

Influence of the group V element on the chemical potential and crystal structure of Au-catalyzed III-V nanowires

Quantitative Study of GaAs Nanowires Catalyzed by Au Film of Different Thicknesses

Group-III assisted catalyst-free growth of InGaAs nanowires and the formation of quantum dots

Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy

The Influence of Growth Temperature and Input V/III Ratio on the Initial Nucleation and Material Properties of InN on GaN by MOCVD

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy

Au-catalyzed InP Nanowires: the Influence of Growth Temperature and V/III Ratio

The Effect of Growth Temperature on InAs Quantum Dots Grown by MOCVD

The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires

Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates

High-Density, Defect-Free, and Taper-Restrained Epitaxial GaAs Nanowires Induced from Annealed Au Thin Films

Unexpected Benefits of Rapid Growth Rate for Iii-V Nanowires

Novel Growth and Properties of GaAs Nanowires on Si Substrates

Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111)

Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires.