Influence of growth temperature and V/III ratio on Au-assisted InxGa1−xAs nanowires

Ameruddin, A.S.,Tan, H.H.,Fonseka, H.A.,Gao, Q.

DOI: https://doi.org/10.1109/COMMAD.2012.6472348

2012-01-01

Abstract:InxGa1-xAs nanowires were grown using metal-organic chemical vapour deposition (MOCVD) with various growth temperatures and V/III ratios. The morphology of these nanowires and the composition distribution along the nanowire were studied as a function of these growth parameters. With higher growth temperature and lower V/III ratio, the tapering of the nanowires is reduced. However, the incorporation of Ga in the nanowires is also reduced with lower V/III ratio. The composition distribution along the nanowires is non-uniform with typically In-rich bases and Ga-rich tips.