Abstract:The rapid development of nanophotonic technologies has put forward higher requirements for optoelectronic devices, including ultra-small footprints, high-speed operation, high efficiency, and low power consumption. Optoelectronics based on emerging materials can provide the material framework that can keep pace with future technological demands. Here we will share our latest innovations and device demonstrations of using low-dimensional materials towards discovering high-performance photodetector and electro-optic modulator performances. We will share the concept of strainoptronics enabling to engineer a plurality of material properties (bandgap, workfunction, mobility) and show how a Transition-Metal Dichalcogenides (TMDC)-based efficient photodetector can be realized using MoS2 on a Silicon photonic platform. Furthermore, using scaling-length-theory, we show our roadmap and results of high gain-bandwidth product photodetectors using a metal slot atop a silicon photonic waveguide towards optimizing the carrier-lifetime to transit time ratio. These devices were enabled by a novel 3D-like 2D material transfer system, which also enabled us to demonstrate a 2D material PN junction photodetector operating at zero bias, thus leading to extremely low dark currents and hence very efficient noise-equivalent powers. Finally, we show our latest work on ITO-thin film electro-optic modulators with 40 GHz 3dB roll-off, requiring just 200 meV of the drive voltage. Further development of the modulator platform shows the potential of a 100 GHz fast MZI modulator with a footprint that is 1,000 more compact than standard Silicon photonics and 10,000 more compact compared to Lithium Niobite.

Novel InP Based Optoelectronic Devices for Microwave Photonics Applications

Electro‐Optic Modulators: On‐Chip Dual Electro‐Optic and Optoelectric Modulation Based on ZnO Nanowire‐Coated Photonic Crystal Nanocavity (advanced Optical Materials 17/2018)

Novel micro/nano-scale photonic devices

Semiconductor Modulators And Photodiodes For Microwave Photonic Systems (Invited Talk)

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Photonic integrated circuits fabricated using quantum well intermixing

Photonic-integrated circuits and components using quantum well intermixing

AlInGaAs Multiple Quantum Well-Integrated Device with Multifunction Light Emission/Detection and Electro-Optic Modulation in the Near-Infrared Range

Development of Silicon Photonic Devices for Optical Interconnects

Hybrid Integrated Velocity Matched Travelling-Wave InP/InGaAs Photodetectors with Silicon Nitride Waveguides

Si-Cmos Compatible Materials and Devices for Mid-Ir Microphotonics

InGaAs/InGaAsP Diffused Quantum Wells Optical Amplifiers and Modulators

Low drive voltage optical phase modulator with novel InGaAlAs/InAlAs multiple-quantum-barrier based n-i-n heterostructure.

Design of Traveling-wave Electrodes for High-speed InP-based Semiconductor Electro-optic Modulators

High-performance Opto-Electronics with Emerging Materials

Investigating the performance of a novel silicon based p-i-n modulator with enhanced carrier injection

Microwave Photonic Devices Based on High-Q AlN Microring Resonators

InP-based Monolithic Optoelectronic Integrated Circuits

High-speed Plasmonic ITO Modulators

Integrated Pockels Modulators on Silicon Photonics Platform

Over 40 GHz Bandwidth and 0.7-V Vπ Compact InP-Based Electro-optic Modulator with N-I-n MQBs