Abstract:In the present paper, the properties of Cu(In(1-x) Ga(x)) Se2 (CIGS) thin film absorber materials for the solar cells obtained by selenization of the precursors with In-rich or CuGa-rich surface layers were studied by XRD, SEM and Raman spectra. The photovoltaic devices based on the absorbers were measured and analyzed by illuminated J-V curve subsequently. The performance of the device constructed by the absorbers obtained by selenization of the precursors with CuGa-rich surface layer was improved greatly compared to that with In-rich surface layer. Through Raman spectra measurement, it was found that the Raman peak of the A1 mode was shifted for the CuGa-rich one, which is verified that the band gap of the surface layers was elevated. Moreover the value of increased Ga contents within the surface region of films were calculated by the relation between the Raman shifts and the Ga contents. As a result, the devices based on the thin films with the elevated surface energy band by selenizing the precursors with the CuGa-rich surface layer improved further the V(oc) and FF by about 74 mV and 8% respectively compared to that of corresponding to the one with In-rich surface layers, so that the conversion efficiency of the photovoltaic devices based on these thin films with CuGa-rich surface layer was improved by up to 9.4%. Meanwhile Raman scattering spectroscopy has proven to be a very powerful and useful technique for the surface analysis of such thin film solar cell semiconducuor materials.

Impact of Various Cu Contents on Raman Spectra from Cu(In,Ga)Se2 Thin Films

Study on the Modified Surface Layers of the Cigs Thin Films by Raman Spectra

Effect of Structure on Raman Spectra in Cu(In,Ga)3Se5 Thin Films

Investigation of Microstructural and Optical Properties of Cu(In, Al)Se-2 Thin Films with Various Copper Content

Cu(In,Ga)Se2-based Solar Cells Prepared from Se-containing Precursors

Influence of Ga Concent of CuInGa Precursor on Stoichiometry of Cu(In1 - xGax) Se2 Photon Absorption Films

Nonlinear Shift of the Raman A(1) Mode in Ga-Incorporated Cuinse2 Thin Films

The Influence of a CIGS Thin Film Composition on Performance of a Solar Cell

Composition-induced Structural Modifications in the Quaternary CuIn1−xGaxSe2thin Films: Bond Properties Versus Ga Content

Structural Analysis of Cu(In1-Xgax)Se-2 Multi-Layer Thin Film Solar Cells

Effects of Cu Elements on Cu(In,Ga)Se2 Film and Solar Cell

Comparative Study of the Role of Ga in Cigs Solar Cells with Different Thickness

Cu(In, Ga)Se 2 Thin Films on Flexible Polyimide Sheet: Structural and Electrical Properties Versus Composition

Defect-induced structural disorder in tetragonal Cu(In<sub>1 <i>x</i></sub>Ga<sub><i>x</i></sub>)<sub>5</sub>Se<sub>8</sub> thin films investigated by Raman spectroscopy: the effect of Ga addition

Microstructural and Microchemical Analysis of Chalcopyrite Cu(In,Ga)Se 2 Films

Influence of Cu on Ga diffusion during post-selenizing the electrodeposited Cu/In/Ga metallic precursor process

Defect-Induced Structural Disorder In Tetragonal Cu(In1-Xgax)(5)Se-8 Thin Films Investigated By Raman Spectroscopy: The Effect Of Ga Addition

Composition Dependence Of The Raman A(1) Mode And Additional Mode In Tetragonal Cu-In-Se Thin Films

Metal Precursor Influence On Performance Of Cuin1-Xgaxse2 Films

Comparison of the Compositions and Structures of Electrodeposited Cu-Poor and Cu-Rich Cu(In1-Xgax)Se-2 Films Before and after Selenization

Effect of the Chemical Composition of Cu–In–Ga–Se Layers on the Photoconductivity and Conversion Efficiency of CdS/CIGSe Solar Cells