Experimental Observation of Dirac-like Surface States and Topological Phase Transition in Pb[subscript 1-X]sn[subscript X]te(111) Films

Chenhui Yan,Junwei Liu,Yunyi Zang,Jianfeng Wang,Zhenyu Wang,Peng Wang,Zhidong Zhang,Lili Wang,Xu-Cun Ma,Shuai‐Hua Ji,Ke He,Liang Fu,Wenhui Duan,Quan Xue,Xi Chen

IF: 8.6

2014-01-01

Physical Review Letters

Abstract:United States. Dept. of Energy. Division of Materials Sciences and Engineering (Award DE-SC0010526)

What problem does this paper attempt to address?

Experimental Observation of Dirac-like Surface States and Topological Phase Transition in Pb(1-x)Sn(x)Te(111) Films.

Chenhui Yan,Junwei Liu,Yunyi Zang,Jianfeng Wang,Zhenyu Wang,Peng Wang,Zhi-Dong Zhang,Lili Wang,Xucun Ma,Shuaihua Ji,Ke He,Liang Fu,Wenhui Duan,Qi-Kun Xue,Xi Chen

DOI: https://doi.org/10.1103/physrevlett.112.186801

IF: 8.6

2014-01-01

Physical Review Letters

Abstract:The surface of a topological crystalline insulator (TCI) carries an even number of Dirac cones protected by crystalline symmetry. We epitaxially grew high-quality Pb(1-x)Sn(x)Te(111) films and investigated the TCI phase by in situ angle-resolved photoemission spectroscopy. Pb(1-x)Sn(x)Te(111) films undergo a topological phase transition from a trivial insulator to TCI via increasing the Sn/Pb ratio, accompanied by a crossover from n-type to p-type doping. In addition, a hybridization gap is opened in the surface states when the thickness of the film is reduced to the two-dimensional limit. The work demonstrates an approach to manipulating the topological properties of TCI, which is of importance for future fundamental research and applications based on TCI.
Experimental Observation of Dirac-like Surface States and Topological Phase Transition in Films

Chenhui Yan,Junwei Liu,Yunyi Zang,Jianfeng Wang,Zhenyu Wang,Peng Wang,Zhi-Dong Zhang,Lili Wang,Xucun Ma,Shuaihua Ji,Ke He,Liang Fu,Wenhui Duan,Qi-Kun Xue,Xi Chen

IF: 8.6

2014-01-01

Physical Review Letters

Abstract:The surface of a topological crystalline insulator (TCI) carries an even number of Dirac cones protected by crystalline symmetry. We epitaxially grew high-quality Pb 1− x Sn x Te (111) films and investigated the TCI phase by in situ angle-resolved photoemission spectroscopy. Pb 1− x Sn x Te (111) films undergo a topological phase transition from a trivial insulator to TCI via increasing the Sn/Pb ratio, accompanied by a crossover from n-type to p-type doping. In addition, a hybridization gap is opened in the surface states when the thickness of the film is reduced to the two-dimensional limit. The work demonstrates an approach to manipulating the topological properties of TCI, which is of importance for future fundamental research and applications based on TCI.
Realization of topological phase transition in PbSnTe (111) films

Chenhui Yan,Junwei Liu,Yunyi Zang,Zhenyu Wang,Jianfeng Wang,Zhidong Zhang,Lili Wang,Xucun Ma,Shuaihua Ji,Ke He,Liang Fu,Wenhui Duan,Qi-Kun Xue,Xi Chen

2015-01-01

Abstract:M7. 00005: Realization of topological phase transition in Pb Sn Te (111) films*
Observation of Topological Crystalline Insulator phase in the lead tin chalcogenide Pb1-xSnxTe material class

Su-Yang Xu,Chang Liu,N. Alidoust,D. Qian,M. Neupane,J. D. Denlinger,Y. J. Wang,L. A. Wray,R. J. Cava,H. Lin,A. Marcinkova,E. Morosan,A. Bansil,M. Z. Hasan

DOI: https://doi.org/10.48550/arXiv.1206.2088

2012-06-11

Mesoscale and Nanoscale Physics

Abstract:We perform systematic angle-resolved photoemission spectroscopic measurements on the lead tin telluride Pb1-xSnxTe pseudobinary alloy system. We show that the (001) crystalline surface, which is a crystalline surface symmetric about the (110) mirror planes of the Pb1-xSnxTe crystal, pos- sesses four metallic surface states within its surface Brillouin zone. Our systematic Fermi surface and band topology measurements show that the observed Dirac-like surface states lie on the symmetric momentum-space cuts. We further show that upon going to higher electron binding energies, the surface states' isoenergetic countours in close vicinity of each X point are observed to hybridize with each other, leading to a Fermi surface fractionalization and the Lifshitz transition. In addition, systematic incident photon energy dependent measurements are performed, which enable us to un- ambiguously identify the surface states from the bulk bands. These systematic measurements of the surface and bulk electronic structure on Pb1-xSnxTe, supported by our first principles calculation results, for the first time, show that the Pb1-xSnxTe system belongs to the topological crystalline insulator phase due to the four band inversions at the L points in its Brillouin zone, which has been recently theoretically predicted.
Direct Observation of the Topological Surface State in the Topological Superconductor 2M-WS2

Soohyun Cho,Soonsang Huh,Yuqiang Fang,Chenqiang Hua,Hua Bai,Zhicheng Jiang,Zhengtai Liu,Jishan Liu,Zhenhua Chen,Yuto Fukushima,Ayumi Harasawa,Kaishu Kawaguchi,Shik Shin,Takeshi Kondo,Yunhao Lu,Gang Mu,Fuqiang Huang,Dawei Shen

DOI: https://doi.org/10.1021/acs.nanolett.2c02372

IF: 10.8

2022-01-01

Nano Letters

Abstract:The quantum spin Hall (QSH) effect has attracted extensive research interest because of the potential applications in spintronics and quantum computing, which is attributable to two conducting edge channels with opposite spin polarization and the quantized electronic conductance of 2e(2)/h. Recently, 2M-WS2, a new stable phase of transition metal dichalcogenides with a 2M structure showing a layer configuration identical to that of the monolayer 1T ' TMDs, was suggested to be a QSH insulator as well as a superconductor with a critical transition temperature of around 8 K. Here, high-resolution angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES are applied to investigate the electronic and spin structure of the topological surface states (TSS) in the superconducting 2M-WS2. The TSS exhibit characteristic spin-momentum-locking behavior, suggesting the existence of long-sought nontrivial Z(2) topological states therein. We expect that 2M-WS2 with coexisting superconductivity and TSS might host the promising Majorana bound states.
First-principles study of the topological surface states of -Sn(111)

Zhibin Shi,Xiaoxiong Wang,Caizhi Xu,Peng Wang,Yang Liu,T-C Chiang

DOI: https://doi.org/10.1016/j.physleta.2020.126782

IF: 2.707

2020-01-01

Physics Letters A

Abstract:alpha-Sn is on the boundary of a couple of distinct topological phases. It will transform into a topological insulator under a suitable strain. However, a clear picture of its topological surface states (TSSs) is still lacking. Here we perform first-principles calculations on the electronic structure of alpha-Sn(111) surface to identify its TSSs and reveal their properties. The results show that the presence of valence band reorganizes the TSSs in the inverted sp gap into two Dirac cones. The lower one is in the valence band continuum; the upper one resides in the gap between the valence and conduction bands. We also demonstrate the transformation of the surface states by switching on or off of strain and/or spinorbit coupling. Without spin-orbit coupling, only the TSSs associated with the lower Dirac cone survive, and they are spin unpolarized. The results are useful for understanding and engineering the topological properties of alpha-Sn. (C) 2020 Elsevier B.V. All rights reserved.
Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Y. Liu,H. -H. Wang,G. Bian,Z. Zhang,S. S. Lee,P. A. Fenter,J. Z. Tischler,H. Hong,T. -C. Chiang

DOI: https://doi.org/10.1103/physrevlett.110.226103

IF: 8.6

2013-01-01

Physical Review Letters

Abstract:Interfacial topological states are a key element of interest for topological insulator thin films, and their properties can depend sensitively on the atomic bonding configuration. We employ in situ nonresonant and resonant surface x-ray scattering to study the interfacial and internal structure of a prototypical topological film system: Bi2Te3 grown on Si(111). The results reveal a Te-dominated buffer layer, a large interfacial spacing, and a slightly relaxed and partially strained bottom quintuple layer of an otherwise properly stacked bulklike Bi2Te3 film. The presence of the buffer layer indicates a nontrivial process of interface formation and a mechanism for electronic decoupling between the topological film and the Si(111) substrate.
Experimental Evidence of the Thickness- and Electric-Field-dependent Topological Phase Transitions in Topological Crystalline Insulator SnTe(111) Thin Films

Yan Gong,Kejing Zhu,Zhe Li,Yunyi Zang,Xiao Feng,Ding Zhang,Canli Song,Lili Wang,Wei Li,Xi Chen,Xu-Cun Ma,Qi-Kun Xue,Yong Xu,Ke He

DOI: https://doi.org/10.1007/s12274-018-2120-y

IF: 9.9

2018-01-01

Nano Research

Abstract:Using in situ angle-resolved photoemission spectroscopy, we systematically studied molecular-beam-epitaxy-grown topological crystalline insulator SnTe(111) thin films with varied thicknesses and substrate conditions. An oscillation in the band gap size with an increase in thickness was observed to depend on the electric field perpendicular to the films. The observations are consistent with the theoretically predicted thickness- and electric-field-dependent topological phase transitions between the normal insulator and the quantum spin Hall insulator phases in SnTe(111) films and demonstrate them to be an excellent and electrically tunable quantum spin Hall system.
Photoemission Circular Dichroism and Spin Polarization of the Topological Surface States in UltrathinBi2Te3Films

C. -Z. Xu,Y. Liu,R. Yukawa,L. -X. Zhang,I. Matsuda,T. Miller,T. -C. Chiang

DOI: https://doi.org/10.1103/physrevlett.115.016801

IF: 8.6

2015-01-01

Physical Review Letters

Abstract:Circular dichroism (CD) observed by photoemission, being sensitive to the orbital and spin angular momenta of the electronic states, is a powerful probe of the nontrivial surface states of topological insulators, but the experimental results thus far have eluded a comprehensive description. We report a study of Bi2Te3 films with thicknesses ranging from one quintuple layer (two-dimensional limit) to 12 layers (bulk limit) over a wide range of incident photon energy. The data show complex variations in magnitude and sign reversals, which are nevertheless well described by a theoretical calculation including all three photoemission mechanisms: dipole transition, surface photoemission, and spin-orbit coupling. The results establish the nontrivial connection between the spin-orbit texture and CD.
Anisotropic Superconductivity in the Topological Crystalline Metal Pb1/3TaS2 with Multiple Dirac Fermions

Xiaohui Yang,Tonghua Yu,Chenchao Xu,Jialu Wang,Wanghua Hu,Zhuokai Xu,Tao Wang,Chao Zhang,Zhi Ren,Zhu-an Xu,Motoaki Hirayama,Ryotaro Arita,Xiao Lin

DOI: https://doi.org/10.1103/physrevb.104.035157

2021-01-01

Abstract:Topological crystalline metals and semimetals (TCMs) have stimulated great research interest, which broadens the classification of topological phases and provides a valuable platform to explore topological superconductivity. Here, we report the discovery of superconductivity and topological features in Pb-intercalated transition-metal dichalcogenide Pb1/3TaS2. Systematic measurements indicate that Pb1/3TaS2 is a quasi-two-dimensional (q-2D) type-II superconductor (T-c approximate to 2.8 K) with a significantly enhanced anisotropy of upper critical field (gamma H-c2 = H-c2(ab) / H-c2(c) approximate to 17). In addition, first-principles calculations reveal that Pb1/3TaS2 hosts multiple topological Dirac fermions in the electronic band structure. We discover four groups of Dirac nodal lines on the k(z) = pi plane and two sets of Dirac points on the rotation or screw axes, which are protected by crystalline symmetries and robust against spin-orbit coupling (SOC). Dirac-cone-like surface states emerge on the (001) surface because of band inversion. Our work shows that the TCM candidate Pb1/3TaS2 is a promising arena to study the interplay between superconductivity and topological Dirac fermions.
Observation of Topological Dirac Fermions and Surface States in Superconducting BaSn3

K. Huang,A. Y. Luo,C. Chen,G. N. Zhang,X. L. Liu,Y. W. Li,F. Wu,S. T. Cui,Z. Sun,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,H. F. Yang,L. X. Yang,G. Xu,Y. F. Guo,Z. K. Liu,Y. L. Chen

DOI: https://doi.org/10.1103/physrevb.103.155148

2021-01-01

Abstract:The interplay between topological electronic structure and superconductivity has attracted tremendous research interests recently as they could induce topological superconductivity (TSCs) which may be used to realize topological qubits for quantum computation. Among various TSC candidates, superconducting BaSn3 (T-c similar to 4.4 K) has been predicted to be a topological Dirac semimetal (TDS) hosting two pairs of Dirac points along the Gamma-A direction. Here, by combining the use of angle-resolved photoemission spectroscopy and ab initio calculations, we identified the predicted topological Dirac fermions and confirmed the TDS nature of the compound. In addition, we observed surface states connecting the Dirac points. Our observations demonstrate BaSn3 as a superconductor with nontrivial topological electronic structures.
Observation of Gapped Topological Surface States and Isolated Surface Resonances in PdTe2 Ultrathin Films

Jacob Cook,Sougata Mardanya,Qiangsheng Lu,Clayton Conner,Matthew Snyder,Xiaoqian Zhang,James McMillen,Geoff Watson,Tay-Rong Chang,Guang Bian

DOI: https://doi.org/10.1021/acs.nanolett.2c04511

IF: 10.8

2023-01-01

Nano Letters

Abstract:The superconductor PdTe2 is known to host bulk Dirac bands and topological surface states. The coexistence of superconductivity and topological surface states makes PdTe2 a promising platform for exploring topological superconductivity and Majorana bound states. In this work, we report the spectroscopic characterization of ultrathin PdTe2 films with thickness down to three monolayers (ML). In the 3 ML PdTe2 film, we observed spin-polarized surface resonance states, which are isolated from the bulk bands due to the quantum size effects. In addition, the hybridization of surface states on opposite faces leads to a thickness-dependent gap in the topological surface Dirac bands. Our photoemission results show clearly that the size of the hybridization gap increases as the film thickness is reduced. The observation of isolated surface resonances and gapped topological surface states sheds light on the applications of PdTe2 quantum films in spintronics and topological quantum computation.
Observation of Gapped Topological Surface States and Isolated Surface Resonances in PdTe$_2$ Ultrathin Films

Jacob Cook,Sougata Mardanya,Qiangsheng Lu,Clayton Conner,James McMillen,Chi Chen,Mathew Snyder,Xiaoqian Zhang,Tay-Rong Chang,Guang Bian

DOI: https://doi.org/10.48550/arXiv.2209.14296

2022-09-28

Mesoscale and Nanoscale Physics

Abstract:The superconductor PdTe$_2$ is known to host bulk Dirac bands and topological surface states. The coexistence of superconductivity and topological surface states makes PdTe$_2$ a promising platform for exploring topological superconductivity and Majorana bound states. In this work, we report the layer-by-layer molecular beam epitaxy growth and spectroscopic characterization of high quality PdTe$_2$ films with thickness down to 3 monolayers (ML). In the 3 ML PdTe$_2$ film, we observed spin-polarized surface resonance states, which are isolated from the bulk bands due to the quantum size effects. In addition, the hybridization of surface states on opposite faces leads to a thickness-dependent gap in the topological surface Dirac bands. Our photoemission results show clearly that the size of the hybridization gap increases as the film thickness is reduced. The success in growing high quality PdTe$_2$ films by state-of-art molecular beam epitaxy technique and the observation of surface resonances and gaped topological surface states sheds light on the applications of PdTe$_2$ quantum films in spintronics and topological computation.
Observation of Dirac Nodal Line States in Topological Semimetal Candidate PrSbTe

Dengpeng Yuan,Dajian Huang,Xin Ma,Xu Chen,Huifen Ren,Yun Zhang,Wei Feng,Xiegang Zhu,Bo Wang,Xuwen He,Jian Wu,Shiyong Tan,Qunqing Hao,Qiang Zhang,Yi Liu,Qin Liu,Zhengtai Liu,Chao Cao,Qiuyun Chen,Xinchun Lai

DOI: https://doi.org/10.1103/physrevb.109.045113

IF: 3.7

2024-01-01

Physical Review B

Abstract:The interplay among topology, crystal symmetry, magnetic order, and strong electron correlation can give rise to a plethora of exotic physical phenomena. The ZrSiS family is known as typical topological Dirac semimetals, among them LnSbTe (Ln denotes lanthanide) compounds exhibit intriguing characteristics due to the presence of Ln 4 f electrons, resulting in quantum states and unique properties. In this paper, the topological electronic structure of PrSbTe is systematically studied by angle -resolved photoemission spectroscopy (ARPES), combined with magnetic, specific heat measurements, and band structure calculations. The detailed three-dimensional electronic structure of PrSbTe has been obtained, and a diamond -shaped Fermi surface and multiple Dirac nodal lines have been observed, which are in remarkable agreement with theoretical calculations. Moreover, the 4 f electrons in PrSbTe are rather localized, which can be revealed by on -resonant ARPES data and further confirmed by the rather small Sommerfeld coefficient of gamma = 2.6231 mJ/mol K2. Our results provide more detailed information about the LnSbTe family, which gives a deeper understanding of the interaction between Ln 4 f electrons and the topological states.
Topological and Electronic Transitions in a Sb(111) Nanofilm: the Interplay Between Quantum Confinement and Surface Effect

PengFei Zhang,Zheng Liu,Wenhui Duan,Feng Liu,Jian Wu

DOI: https://doi.org/10.1103/physrevb.85.201410

IF: 3.7

2012-01-01

Physical Review B

Abstract:When the dimension of a solid structure is reduced, there will be two emerging effects, quantum confinement and surface effect, which dominate at nanoscale. Based on first-principles calculations, we demonstrate that due to an intriguing interplay between these two dominating effects, the topological and electronic (topoelectronic) properties of Sb (111) nanofilms undergo a series of transitions as a function of the reducing film thickness: transforming from a topological semimetal to a topological insulator at 7.8 nm (22 bilayer), then to a quantum spin Hall (QSH) phase at 2.7 nm (8 bilayer), and finally, to a normal (topological trivial) semiconductor at 1.0 nm (3 bilayer). Our theoretical findings identify the existence of the QSH in the Sb (111) nanofilms within a narrow range of thickness and suggest that the Sb (111) nanofilms provide an ideal test bed for experimental study of topoelectronic phase transitions.
Realization of a New Topological Crystalline Insulator and Lifshitz Transition in PbTe

Songsong Ma,Chunyu Guo,Chengcheng Xiao,Fan Wu,Michael Smidman,Yunhao Lu,Huiqiu Yuan,Huizhen Wu

DOI: https://doi.org/10.1002/adfm.201803188

IF: 19

2018-01-01

Advanced Functional Materials

Abstract:Topological materials boast exotic metallic surface states with linear dispersion and spin‐momentum locking, which makes them potential candidates for dissipationless electronic and spintronic devices. Here, it is theoretically predicted that intrinsic Te antisite defects (TePb) in the narrow‐gap semiconductor PbTe induce a band inversion, turning it into a topological crystalline insulator (TCI). To experimentally verify the exotic properties, TePb antisites are introduced into PbTe crystals via nonstoichiometric growth by molecular beam epitaxy. Semimetallic resistivity and distinct quantum oscillations are observed on the TePb doped PbTe. Most importantly, a π Berry phase is unambiguously revealed by a Landau index analysis, demonstrating the Dirac fermion nature of the topological surface states. The discovered TCI nature in TePb doped PbTe is further explored using magneto‐transport measurements under external pressure, and the theoretical calculations of band structures with applying pressure indicate a pressure‐induced Lifshitz transition. Besides, it is proposed that the contribution of bulk states to transport can be reduced by enlarging the inverted gap with strain.
Weak Topological Insulators in PbTe/SnTe Superlattices

Gang Yang,Junwei Liu,Liang Fu,Wenhui Duan,Chao‐Xing Liu

IF: 8.6

2014-01-01

Physical Review Letters

Abstract:United States. Dept. of Energy. Division of Materials Sciences and Engineering (Award DE-SC0010526)
Observation of unusual topological surface states in half-Heusler compounds LnPtBi (Ln=Lu, Y)

Z. K. Liu,L. X. Yang,S.-C. Wu,C. Shekhar,J. Jiang,H. F. Yang,Y. Zhang,S.-K. Mo,Z. Hussain,B. Yan,C. Felser,Y. L. Chen

DOI: https://doi.org/10.1038/ncomms12924

IF: 16.6

2016-09-27

Nature Communications

Abstract:Topological quantum materials represent a new class of matter with both exotic physical phenomena and novel application potentials. Many Heusler compounds, which exhibit rich emergent properties such as unusual magnetism, superconductivity and heavy fermion behaviour, have been predicted to host non-trivial topological electronic structures. The coexistence of topological order and other unusual properties makes Heusler materials ideal platform to search for new topological quantum phases (such as quantum anomalous Hall insulator and topological superconductor). By carrying out angle-resolved photoemission spectroscopy and ab initio calculations on rare-earth half-Heusler compounds LnPtBi (Ln=Lu, Y), we directly observe the unusual topological surface states on these materials, establishing them as first members with non-trivial topological electronic structure in this class of materials. Moreover, as LnPtBi compounds are non-centrosymmetric superconductors, our discovery further highlights them as promising candidates of topological superconductors.

multidisciplinary sciences
Observation of the Topological Surface State in the Nonsymmorphic Topological Insulator KHgSb

A. J. Liang,J. Jiang,M. X. Wang,Y. Sun,N. Kumar,C. Shekhar,C. Chen,H. Peng,C. W. Wang,X. Xu,H. F. Yang,S. T. Cui,G. H. Hong,Y. -Y. Xia,S. -K. Mo,Q. Gao,X. J. Zhou,L. X. Yang,C. Felser,B. H. Yan,Z. K. Liu,Y. L. Chen

DOI: https://doi.org/10.1103/physrevb.96.165143

IF: 3.7

2017-01-01

Physical Review B

Abstract:Topological insulators represent unusual topological quantum states, typically with gapped bulk band structure but gapless surface Dirac fermions protected by time-reversal symmetry. Recently, a distinct kind of topological insulator resulting from nonsymmorphic crystalline symmetry was proposed in the KHgX ($X=\mathrm{As}$, Sb, Bi) compounds. Unlike regular topological crystalline insulators, the nonsymmorphic glide-reflection symmetry in KHgX guarantees the appearance of an exotic surface fermion with hourglass shape dispersion (where two pairs of branches switch their partners) residing on its (010) side surface, contrasting to the usual two-dimensional Dirac fermion form. Here, by using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the electronic structures of KHgSb on both (001) and (010) surfaces and reveal the unique in-gap surface states on the (010) surface with delicate dispersion consistent with the ``hourglass Fermion'' recently proposed. Our experiment strongly supports that KHgSb is a nonsymmorphic topological crystalline insulator with hourglass fermions, which serves as an important step to the discovery of unique topological quantum materials and exotic fermions protected by nonsymmorphic crystalline symmetry.
Surface-State-Dominated Transport in Crystals of the Topological Crystalline Insulator In-Doped Pb1-X Snxte

Ruidan Zhong,Xugang He,J. A. Schneeloch,Cheng Zhang,Tiansheng Liu,I. Pletikosic,T. Yilmaz,B. Sinkovic,Qiang Li,Wei Ku,T. Valla,J. M. Tranquada,Genda Gu

DOI: https://doi.org/10.1103/physrevb.91.195321

IF: 3.7

2015-01-01

Physical Review B

Abstract:Three-dimensional topological insulators and topological crystalline insulators represent new quantum states of matter, which are predicted to have insulating bulk states and spin-momentum-locked gapless surface states. Experimentally, it has proven difficult to achieve the high bulk resistivity that would allow surface states to dominate the transport properties over a substantial temperature range. Here we report a series of indium-doped Pb_1-xSn_xTe compounds that manifest huge bulk resistivities together with strong evidence of topological surface states, based on thickness-dependent transport studies and magnetoresistance measurements. For these bulk-insulating materials, the surface states determine the resistivity for temperatures approaching 30 K.

Experimental Observation of Dirac-like Surface States and Topological Phase Transition in Pb[subscript 1-X]sn[subscript X]te(111) Films

Experimental Observation of Dirac-like Surface States and Topological Phase Transition in Pb(1-x)Sn(x)Te(111) Films.

Experimental Observation of Dirac-like Surface States and Topological Phase Transition in Films

Realization of topological phase transition in PbSnTe (111) films

Observation of Topological Crystalline Insulator phase in the lead tin chalcogenide Pb1-xSnxTe material class

Direct Observation of the Topological Surface State in the Topological Superconductor 2M-WS2

First-principles study of the topological surface states of -Sn(111)

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Experimental Evidence of the Thickness- and Electric-Field-dependent Topological Phase Transitions in Topological Crystalline Insulator SnTe(111) Thin Films

Photoemission Circular Dichroism and Spin Polarization of the Topological Surface States in UltrathinBi2Te3Films

Anisotropic Superconductivity in the Topological Crystalline Metal Pb1/3TaS2 with Multiple Dirac Fermions

Observation of Topological Dirac Fermions and Surface States in Superconducting BaSn3

Observation of Gapped Topological Surface States and Isolated Surface Resonances in PdTe2 Ultrathin Films

Observation of Gapped Topological Surface States and Isolated Surface Resonances in PdTe$_2$ Ultrathin Films

Observation of Dirac Nodal Line States in Topological Semimetal Candidate PrSbTe

Topological and Electronic Transitions in a Sb(111) Nanofilm: the Interplay Between Quantum Confinement and Surface Effect

Realization of a New Topological Crystalline Insulator and Lifshitz Transition in PbTe

Weak Topological Insulators in PbTe/SnTe Superlattices

Observation of unusual topological surface states in half-Heusler compounds LnPtBi (Ln=Lu, Y)

Observation of the Topological Surface State in the Nonsymmorphic Topological Insulator KHgSb

Surface-State-Dominated Transport in Crystals of the Topological Crystalline Insulator In-Doped Pb1-X Snxte