Abstract:GaN nanomaterials, as one of the most important third-generation semiconductor materials, have attracted wide attention. In this study, GaN nanowires with square cross section were successfully prepared by microwave plasma chemical vapor deposition system. The diameters of nanowires are from 300 to 500 nm and the lengths from 15 to 20 μm. The results show that the cross section of nanowires could be transformed from triangle into square by adjusting the ratio of Mg to Ga in source materials. X-ray diffraction(XRD)result indicate that the structure of GaN nanowires are agree with the hexagonal wurtzite. X-ray photoelectron spectroscopy (XPS) rusult show that a certain amount of Mg and O impurities incoporated in the square-shaped GaN nanowires. Transmission electron microscopy (TEM) result suggested that square-shaped GaN nanowires had high crystallinity with a growth direction of [\begin{document}$0\bar 110$\end{document}]. The ratio of source materials- and time-depented growth mechanism was also studied. It was suggested that the transformation of the cross section from triangle to square structure should be derived from the growth mechanism change from vapor-liquid-solid(VLS)process to vapor-solid(VS)process. The doped Mg increased the growth rate of the nanowires sidewalls, which led to a symmetrically growth of GaN nanowires along the twin boundaries. GaN nanowires gradually transformed to square structure by auto-catalytic growth. Moreover, the property of field emission were further investigated. The results showed that the turn-on electric field of square-shaped GaN nanowires was 5.2 V/m and a stable field emission property at high electric field. This research provides a new method for the preparation of square-shaped GaN nanowires and a prospective way for the design and fabrication of novel nano-scale devices.

The Study on the Mode Competition in GaN-based Hexagonal Microcavity

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

Whispering-gallery Mode Hexagonal Micro-/Nanocavity Lasers [Invited]

Theoretical Modelling of Single-Mode Lasing in Microcavity Lasers Via Optical Interference Injection.

Mode Selection in L40 Photonic Crystal Cavities Via Spatially Distributed Pumping

The Study on the Lasing Modes Modulated by the Dislocation Distribution in the GaN-Based Microrod Cavities

Double-triangular whispering-gallery mode lasing from a hexagonal GaN microdisk grown on graphene

Study of Optical Properties of High-Q GaN Disk-Shaped Microresonant Cavity

Approach to Single-Mode Dominated Resonant Emission in GaN-Based Square Microdisks on Si

Experimental Study of Mode Characteristics for Equilateral Triangle Semiconductor Microcavities

Mode Competition Analysis in Dual-Wavelength Coupled-Cavity Semiconductor Laser

Optical Properties and Resonant Modes in GaN/AlGaN and InGaN/GaN Multiple Quantum Well Microdisk Cavities

Realization of Regular Resonance Mode in GaN-based Polygonal Microdisks on Si

Optical Resonant Modes in Ingan Mqw/Gan Micro-Cone

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

Design And Simulation Of 450nm Gan-Based Multiple-Quantum-Well Tunable V-Cavity Laser

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Fabrication of GaN-based micro-cavity light emitters

Mode Study Of The Light Emission Distribution In Semiconductor Microdisks By Using Near-Field Optical Microscopy

Whispering-Gallery Mode Lasing in a Floating GaN Microdisk with a Vertical Slit