Mitigating the Length of Diffusion Effect by Back-End Design-Technology Cooptimization

Jiwei Zhang,Hao Zhu,Lin Chen,Qingqing Sun,David Wei Zhang
DOI: https://doi.org/10.1109/ted.2022.3145760
2022-01-01
Abstract:The length of diffusion (LOD) effect in low- ${V}_{\text{t}}$ (LVT) and standard- ${V}_{\text{t}}$ (SVT) logic is investigated and the yield and dynamic power consumption (DPC) have been optimized by using back-end of line (BEOL) design-technology cooptimization (DTCO). The resistor–capacitor ( $RC$ ) characteristics of the Via in the back-end structure at 28 nm node is engineered to improve the ${RC}$ properties which further alleviates the yield and DPC issues originated from the LOD effect. With the ${RC}$ as the mechanism affecting the frequency and power level, it is found that the yield loss and DPC loss can be significantly lowered with ${RC}$ balance optimization of the Via. These results demonstrate that the BEOL optimization can be more efficient in solving such front-end of line (FEOL) issues as compared to the conventional FEOL engineering. In addition to the circuit design improvement, such optimization also provides a promising approach to suppress the layout-dependent LOD effect through process engineering.
What problem does this paper attempt to address?