Abstract:A number of recent studies have illustrated the importance of photoexcited electrons in surface reactions at metal surfaces. This work focuses on directly determining the relaxation dynamics for photoexcited electrons at Cu(100) surfaces. This particular surface is important as recent observations for photoinduced desorption of CO have found quantum yields as high as 15% for the hot electron reaction channel at high laser fluences.1 Equal pulse correlation studies employing 3 eV pulses (50-60 fs) with both parallel and crossed polarization and low energy (<100 nJ/cm2) have been used to characterize the intrinsic electron relaxation dynamics in the absence of excess lattice heating or transient collective effects. This low energy limit corresponds to photoinduced surface chemistry employing conventional low flux CW light sources such as arc lamps. These results are shown in Figure 1. The inset shows the observed photoemission spectrum. The highest energy electrons give a pulse width limited response function which can be used to deduce the slower relaxation dynamics of the lower energy electrons. The slower relaxation dynamics are clearly resolved as a broadening in the FWHM of the two pulse correlation of the photoemitted electron at specific energies. The deconvolved relaxation times for the electron energy distribution are shown in which the solid line through the data is a fit to a calculation based on Fermi liquid theory for electron relaxation scaled by a factor of 2.45. The extent of this agreement for the electron relaxation dynamics at a single crystal surface is similar to the relaxation dynamics observed previously for polycrystalline gold surfaces at higher fluences.2 At lower energies above EF, hot electron transport effects become noticeable and can be understood in terms of a ballistic transport model. These results fully characterize the non-radiative relaxation of electrons at low fluence and peak power.

Hot Electron Reaction Dynamics at GaAs(100) Surface Quantum Wells

Hot Electron Reaction Dynamics at GaAs(100) Surface Quantum Wells

Photogenerated Hot Electron Dynamics at Gaas (100) Surfaces

Femtosecond time-resolved photoemission study of hot electron relaxation at the GaAs(100) surface

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Exciton Relaxation and Coupling Dynamics in a GaAs/AlxGa1−xAs Quantum Well and Quantum Dot Ensemble

Real-Time Ab Initio Investigation on Hot Electron Relaxation Dynamics in Silicon

Femtosecond Photoemission Studies of Electron Relaxation at Cu Surfaces

Hot electron effect in GaAs/ AlGaAs multiple quantum wells

Spin Diffusion/transport in N-Type GaAs Quantum Wells

Hot electron dynamics in a semiconductor nanowire under intense THz excitation

Hot-electron Effect in Spin Dephasing in N-Type GaAs Quantum Wells

Atomically Resolved Real-Space Imaging of Hot Electron Dynamics

Transient hot-electron transport in GaAs with a Γ-L-X band structure

Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure

Revealing Exciton Dephasing and Transport Dynamics in Semiconductor Quantum Well - Quantum Dot Systems Using Optical 2d Fourier Transform Spectroscopy

Hot-electron Mobility in Laterally Confined Systems

Energy Relaxation of Hot Electrons Driven by Intense Terahertz Fields in Two-Dimensional Semiconductor Systems

Hot-electron Transient Transport in a Superlattice Miniband

On the Theory of Electron Transfer Reactions at Semiconductor Electrode/Liquid Interfaces

Study of Electron Spin Relaxation Time in GaAs (110) Quantum Wells