P‐47: Influences of Mo Film Residual Stress on Cu/Mo Interface and Undercut Performance

Guo Li,Chen Meng,Sun Sheng,Sun Yao,Liu Huangzheng,Tan Zhiwei,Xiao Juncheng,Zhou Hang
DOI: https://doi.org/10.1002/sdtp.14178
2020-01-01
SID Symposium Digest of Technical Papers
Abstract:The bilayer structure of Cu/Mo wires applied in TV panels has been suffering from the undercut issue after patterning ever since its commercialization. Most of the efforts focused on applying more expensive barrier layer materials or the long‐time developing of etchant. In this paper, the influence of Mo residual stress on the undercut of Cu/Mo has been investigated. The results showed that by changing the Mo stress from tensile to compressive, the undercut has been improved to more than 50%, which is a promising solution for the issue.
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