Abstract:Computational study of atomically thin monolayer MoS2/WSe2 heterojunction with focus on carrier dynamics and thermal transport is performed by using finite-difference method to solve carrier transport equations and heat conduction equation. Carrier transport in the horizontal direction is in the micrometer scale, while in the vertical direction it is on the subnanometer scale. Carrier transport is modeled as diffusive transport in the horizontal direction with tunneling-assisted carrier recombination between two monolayers in the vertical direction as in the previous study. Band profile, quasi-Fermi level splitting, carrier distribution, and heat generation are investigated in detail. The heterojunction with high-doping concentration has larger current compared to that with low-doping concentration. Heat generation has two components which are due to the Joule heating and inelastic carrier recombination, respectively. The former is provided by the applied voltage, while the latter is from surrounding environment which acts as thermal reservoir. Since the heterojunction works very differently from the conventional p-n diode, it is compared to typical field-effect transistors due to similar device structures. The heat generation of the heterojunction is eight orders lower than that of typical nanoscale field-effect transistors because of its low-current density. Temperature increase in the heterojunction is also several orders of magnitude lower compared to typical nanoscale field-effect transistors.

Large enhancement of thermoelectric performance in MoS <sub>2</sub> / <i>h</i> -BN heterostructure due to vacancy-induced band hybridization

Large enhancement of thermoelectric performance in MoS<sub>2</sub>/<i>h</i>-BN heterostructure due to vacancy -induced band hybridization

Large enhancement of thermoelectric performance in MoS2/h-BN heterostructure due to vacancy-induced band hybridization.

Kondo Impurities in Two Dimensional MoS2 for Achieving Ultrahigh Thermoelectric Powerfactor

Dramatically Enhanced Thermoelectric Performance of Mos2 by Introducing Moo2 Nanoinclusions

Correction for Wu Et Al., Large Enhancement of Thermoelectric Performance in MoS2/h-BN Heterostructure Due to Vacancy-Induced Band Hybridization

Dramatically enhanced thermoelectric performance of MoS<sub>2</sub> by introducing MoO<sub>2</sub> nanoinclusions

Realizing P-Type MoS2 with Enhanced Thermoelectric Performance by Embedding VMo2S4 Nanoinclusions

Large Thermoelectricity via Variable Range Hopping in Chemical Vapor Deposition Grown Single-layer MoS2

High Thermoelectric Powerfactor in Single and Few-Layer MoS$_2$

Electronic Structures and Thermoelectric Properties of Two-Dimensional Mos2/Mose2 Heterostructures

High Thermoelectric Powerfactor in Single and Few-Layer MoS_2

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

High Thermoelectric Powerfactor in 2D Crystals of MoS 2

Two-dimensional Mo1-xB2 with ordered metal vacancies obtained for advanced thermoelectric applications based on first-principles calculations

High Thermoelectric Power Factor in Two-Dimensional Crystals Ofmos2

Enhancing heat transport in MoS2 via defect-engineering

Band structure modification and multi-scale phonon scattering synergistically boosts the thermoelectric performance of antimony incorporated MoS2.

Large Thermoelectric Power Factor of High-Mobility Transition-Metal Dichalcogenides with 1T^{″} Phase

Very High Interfacial Thermal Conductance in Fully hBN-Encapsulated MoS2 van der Waals Heterostructure

Enhancement of Thermoelectric Properties of Molybdenum Diselenide Through Combined Mg Intercalation and Nb Doping