Large enhancement of thermoelectric performance in MoS<sub>2</sub>/<i>h</i>-BN heterostructure due to vacancy -induced band hybridization
Jing Wu,Yanpeng Liu,Yi Liu,Yongqing Cai,Yunshan Zhao,Hong Kuan Ng,Kenji Watanabe,Takashi Taniguchi,Gang Zhang,Cheng-Wei Qiu,Dongzhi Chi,A. H. Castro Neto,John T. L. Thong,Kian Ping Loh,Kedar Hippalgaonkar
DOI: https://doi.org/10.1073/pnas.2007495117
2020-01-01
Abstract:Local impurity states arising from atomic vacancies in two-dimensional (2D) nanosheets are predicted to have a profound effect on charge transport due to resonant scattering and can be used to manipulate thermoelectric properties. However, the effects of these impurities are often masked by external fluctuations and turbostratic inter- faces; therefore, it is challenging to probe the correlation between vacancy impurities and thermoelectric parameters experimentally. In this work, we demonstrate that n-type molybdenum disulfide (MoS2 ) supported on hexagonal boron nitride (h-BN) substrate re- veals a large anomalous positive Seebeck coefficient with strong band hybridization. The presence of vacancies on MoS2 with a large conduction subband splitting of 50.0 +/- 5.0 meV may contribute to Kondo insulator-like properties. Furthermore, by tuning the chem- ical potential, the thermoelectric power factor can be enhanced by up to two orders of magnitude to 50 mW m(-1) K-2 . Our work shows that defect engineering in 2D materials provides an effective strat- egy for controlling band structure and tuning thermoelectric transport.