Abstract:The purpose with the present study has been to theoretically investigate the effect of P (or S) doping on the chemical vapor deposition (CVD) growth rate of diamond. Density functional theory (DFT) calculations under periodic boundary conditions were then used for the investigation of the highly symmetric H-terminated diamond (111) surface. It was shown that both the thermodynamics and kinetics of P (or S) substitutional doping during diamond (111) growth were severely affected by the dopants (as compared with the non-doped situation). As a result of the thermodynamic calculations, except for P doping in C layer 1, the thermodynamic driving force for the diamond (111) growth was found to be largely improved by positioning P within the upper surface region of the H-terminated diamond (111) surface, while the opposite was true for S-doping. The P doping had a local vertical influence on the H abstraction energies, which was not the situation for the S doping. Also, both P and S doping showed a local lateral influence on the H abstraction energies, which was more pronounced for P doping. As a result of the kinetic calculations, the vertical and lateral P doping showed no local effect on the H abstraction energy barriers. In fact, these energy barriers became zero for P positioned in C layer 2 and downwards and were also zero for longer distances from the H adsorbate. On the other hand, the vertical S doping showed a local effect on the calculated barrier energies, but no lateral effect. The calculated energy barriers were zero for all surface H adsorbates on the H-terminated diamond (111) surface when S was positioned in the 4th atomic C layer. The different results for P doping versus S doping could be explained by the fact that S contains one electron extra and that P has a larger electronegativity value. Consequently, the results showed that P positioned in the upper diamond (111) surface lattice caused an enhancement in the diamond growth rate. The exception was the position in C atomic layer 1, for which both P doping and S doping had no effect on the diamond growth rate. On the other hand, a growth rate improvement was only found for S positioned in the 4th C layer. Due to the much higher (i.e., more positive) theoretical incorporation energies of S dopants versus P dopants in the diamond lattice, it has here been concluded that P doping is more effective than S doping in increasing the growth rate of the H-terminated diamond (111). Especially when considering that the H adsorbates are very mobile on this diamond surface, which has been shown by ab initio MD simulations at experimental CVD temperatures. These observations correlate well with experimental results.

Effects of phosphorus doping <i>via</i> Mn<sub>3</sub>P<sub>2</sub> on diamond growth along the (100) surfaces

Effect of sulfur and phosphorous doping on the growth rate of CVD diamond (111)

(Invited) Preparation of N-Type and P-Type Doped Single Crystal Diamonds with Laser-Induced Doping and Microwave Plasma Chemical Vapor Deposition

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Phosphorus-doped (113) CVD diamond: A breakthrough towards bipolar diamond devices

Effects of Mn-Doping on PIN-PMN-PT Ceramics with MPB Composition

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Effects of Heavy Phosphorus-Doping on Mechanical Properties of Czochralski Silicon

Sulfur regulation of boron doping and growth behavior for high-quality diamond in microwave plasma chemical vapor deposition

First-Principles Calculations of P-B Co-Doped Cluster N-Type Diamond

Effects of Mn-doping on the Structural Evolution of Β-Tricalcium Phosphate by Rietveld Refinement and Raman Spectroscopy

A Study of the affect of N and B doping on the growth of CVD diamond (100):H 2 X 1 surfaces

A Theoretical Study on Dopants Substituted on the H-terminated Surface Regulating the Threshold Concentration of Nitrogen for Accelerating Diamond Growth

Growth mechanism of Mn-doped diamond (111) layers in microwave plasma chemical vapor deposition

Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth

Phosphorus doping of ultra-small silicon nanocrystals

Recent progress in homoepitaxial single-crystal diamond growth via MPCVD

Boron‐Doped Single‐Crystal Diamond Growth on Heteroepitaxial Diamond Substrate Using Microwave Plasma Chemical Vapor Deposition

Revealing Mn doping effect in transition metal phosphides to trigger active centers for highly efficient chemodynamic and NIR-II photothermal therapy

Effects of Phosphorus Doping in ZnO Nanocrystals by Metal Organic Chemical Vapor Deposition

Effects of Phosphorus Doping Source Temperatures on Fabrication and Properties of P-Type ZnO Thin Films