A two-dimensional MoS2/C3N broken-gap heterostructure, a first principles study

Yaxiao Yang,Zhiguo Wang

DOI: https://doi.org/10.1039/c9ra02935d

IF: 4.036

2019-01-01

RSC Advances

Abstract:van der Waals (vdW) heterojunctions are of interest in two-dimensional electronic and optoelectronic devices.

What problem does this paper attempt to address?

A Two-Dimensional MoS2/C3N Broken-Gap Heterostructure, a First Principles Study

Yaxiao Yang,Zhiguo Wang

DOI: https://doi.org/10.1039/c9ra02935d

IF: 4.036

2019-01-01

RSC Advances

Abstract:van der Waals (vdW) heterojunctions are of interest in two-dimensional electronic and optoelectronic devices. In this work, first-principles calculations were used to study the atomic and electronic properties of the MoS2/C3N vdW heterojunction. The results show that there is no overlap of the band gaps for the MoS2 and C3N monolayers in the heterojunction, indicating the MoS2/C3N vdW heterostructure has a type III alignment. The MoS2/C3N vdW heterostructure is a broken-gap heterojunction. The effects of biaxial strain and external electric field on the band structure of the vdW heterostructure were also investigated. The alignment type cannot be changed, but the band overlap can be tuned. The present work reveals that the MoS2/C3N heterostructures are quite favorable for applications in tunneling devices based on the broken-gap heterostructures.
A van der Waals pn heterojunction with organic/inorganic semiconductors

Daowei He,Yiming Pan,Haiyan Nan,Shuai Gu,Ziyi Yang,Bing Wu,Xiaoguang Luo,Bingchen Xu,Yuhan Zhang,Yun Li,Zhenhua Ni,Baigeng Wang,Jia Zhu,Yang Chai,Yi Shi,Xinran Wang

DOI: https://doi.org/10.48550/arXiv.1511.02361

2015-11-07

Abstract:van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely limited to atomic crystals, and hybrid organic/inorganic structures are rarely explored. Here, we fabricate hybrid 2D heterostructures with p-type dioctylbenzothienobenzothiophene (C8-BTBT) and n-type MoS2. We find that few-layer C8-BTBT molecular crystals can be grown on monolayer MoS2 by vdW epitaxy, with pristine interface and controllable thickness down to monolayer. The operation of the C8-BTBT/MoS2 vertical heterojunction devices is highly tunable by bias and gate voltages between three different regimes: interfacial recombination, tunneling and blocking. The pn junction shows diode-like behavior with rectifying ratio up to 105 at the room temperature. Our devices also exhibit photovoltaic responses with power conversion efficiency of 0.31% and photoresponsivity of 22mA/W. With wide material combinations, such hybrid 2D structures will offer possibilities for opto-electronic devices that are not possible from individual constituents.

Mesoscale and Nanoscale Physics,Materials Science
Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Chendong Zhang,Chih-Piao Chuu,Xibiao Ren,Ming-Yang Li,Lain-Jong Li,Chuanhong Jin,Mei-Yin Chou,Chih-Kang Shih

DOI: https://doi.org/10.1126/sciadv.1601459

IF: 13.6

2017-01-01

Science Advances

Abstract:By using direct growth, we create a rotationally aligned MoS2/WSe2 hetero-bilayer as a designer van der Waals heterostructure. With rotational alignment, the lattice mismatch leads to a periodic variation of atomic registry between individual van der Waals layers, exhibiting a Moiré pattern with a well-defined periodicity. By combining scanning tunneling microscopy/spectroscopy, transmission electron microscopy, and first-principles calculations, we investigate interlayer coupling as a function of atomic registry. We quantitatively determine the influence of interlayer coupling on the electronic structure of the hetero-bilayer at different critical points. We show that the direct gap semiconductor concept is retained in the bilayer although the valence and conduction band edges are located at different layers. We further show that the local bandgap is periodically modulated in the X-Y direction with an amplitude of ~0.15 eV, leading to the formation of a two-dimensional electronic superlattice.
Geometric, electronic, and optical properties of MoS 2 /WSSe van der Waals heterojunctions: a first-principles study

Yan-Fang Zhang,Jinbo Pan,Shixuan Du

DOI: https://doi.org/10.1088/1361-6528/ac0569

IF: 3.5

2021-06-11

Nanotechnology

Abstract:Van der Waals (vdW) heterojunctions constructed by vertical stacking two-dimensional transition metal dichalcogenides hold exciting promise in realizing future atomically thin electronic and optoelectronic devices. Recently, a Janus WSSe structure has been successfully synthesized by using chemical vapor deposition, selective epitaxy atomic replacement, and pulsed laser deposition methods. Herein, based on first-principles calculations, we introduce the structures and performances of MoS2/WSSe vdW heterojunctions with different interfaces and stacking modes. The vdW heterojunctions possess indirect band gaps for S–S interfaces, while direct band gaps for Se–S interfaces. Besides, the potential drop indicates an efficient separation of photogenerated charges. Interestingly, the opposite built-in electric fields formed in the vdW heterojunctions with a S–S interface and a Se–S interface suggest different charge transfer paths, which would motivate further theoretical and experimental investigations on charge transfer dynamics. Moreover, the electronic property is adjustable by applying external in-plane strains, accomplishing with indirect to direct bandgap transition and semiconductor to metal transition. The findings are helpful for the design of multi-functional high-performance electronic and optoelectronic devices based on the MoS2/WSSe vdW heterojunctions.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
First-principles study of two-dimensional van der Waals heterojunctions

Wei Hu,Jinlong Yang

DOI: https://doi.org/10.1016/j.commatsci.2015.06.033

IF: 3.572

2016-02-01

Computational Materials Science

Abstract:Research on graphene and other two-dimensional (2D) materials, such as silicene, germanene, phosphorene, hexagonal boron nitride (h-BN), graphitic carbon nitride (g-C3N4), graphitic zinc oxide (g-ZnO) and molybdenum disulfide (MoS2), has recently received considerable interest owing to their outstanding properties and wide applications. Looking beyond this field, combining the electronic structures of 2D materials in ultrathin van der Waals heterojunctions has also emerged to widely study theoretically and experimentally to explore some new properties and potential applications beyond their single components. Here, this article reviews our recent theoretical studies on the structural, electronic, electrical and optical properties of 2D van der Waals heterojunctions using density functional theory calculations, including the Graphene/Silicene, Graphene/Phosphorene, Graphene/g-ZnO, Graphene/MoS2 and g-C3N4/MoS2 heterojunctions. Our theoretical simulations, designs and calculations show that novel 2D van der Waals heterojunctions provide a promising future for electronic, electrochemical, photovoltaic, photoresponsive and memory devices in the experiments.

materials science, multidisciplinary
Effect of Vertical Strain and In-Plane Biaxial Strain on Type-Ii MoSi2N4/Cs3Bi2I9 Van Der Waals Heterostructure

Congying Liu,Zhenwei Wang,Wenqi Xiong,Hongxia Zhong,Shengjun Yuan

DOI: https://doi.org/10.1063/5.0080224

IF: 2.877

2022-01-01

Journal of Applied Physics

Abstract:Construction of van der Waals heterostructures (vdWHs) from layered materials may form new types of optoelectronic devices with better performance compared to individual layers. Here, we investigate theoretically the structural stability, electronic properties, charge-transport mechanisms, and optical properties of two-dimensional (2D) MoSi2N4/Cs3Bi2I9 vdWHs by using the first-principles calculations. Our results demonstrate that the 2D MoSi2N4/Cs3Bi2I9 vdWHs possess a direct bandgap and type-II band alignment due to the built-in electric field induced by the electron transfer from MoSi2N4 to Cs3Bi2I9 layer, which can prevent photoinduced electrons and holes from recombination and thus enhance the carrier lifetime. Furthermore, the optical absorption of the heterostructure is enhanced in the visible and ultraviolet region, and its electronic property is tunable under in-plane strains with a clear metal–semiconductor transition. Finally, we explore more A3B2X9/MA2Z4 vdWHs with A = Cs; B = In, Sb, Bi; and X = Cl, Br, I in A3B2X9 and M = Cr, Mo, Ti; A = Si; and Z = N, P in MA2Z4, and we find all three types of band alignments (type-I, type-II, and type-III). Our study provides a comprehensive theoretical understanding of the electronic and optical properties of perovskite-based heterostructures and indicates its potential applications in optoelectronic devices.
Tunable Band-Structures of MSe2/C3N (M = Mo and W) Van Der Waals Heterojunctions

Zixiang Liu,Yaxiao Yang,Xiaoyu Yang,Guangqiang Yin,Zhiguo Wang

DOI: https://doi.org/10.1088/2053-1591/acbf10

IF: 2.025

2023-01-01

Materials Research Express

Abstract:Van der Waals (vdW) heterojunctions constructed using two-dimensional (2D) materials have shown excellent properties for applications in various fields. In this study, the structural and electronic properties of 2D MoSe2/C3N and WSe2/C3N vdW heterojunctions have been investigated using first-principles calculations. The results show that the MoSe2/C3N heterojunction is an indirect bandgap semiconductor with a small bandgap 0.05 eV and the WSe2/C3N heterojunction is a type II heterojunction with an indirect bandgap of 0.26 eV. Strains and external electric fields can effectively modulate the electronic structure of these heterojunctions. The WSe2/C3N heterojunction can become a type III heterojunction under compressive strains, which also becomes a direct bandgap heterojunction with type I band alignment under a negative electric field. Our results may be useful for the design of electronic nanodevices.
Synthesis and Spectral Characteristics Investigation of the 2D-2D vdWs Heterostructure Materials

Tao Han,Hongxia Liu,Shulong Wang,Shupeng Chen,Kun Yang,Zhandong Li

DOI: https://doi.org/10.3390/ijms22031246

2021-01-27

Abstract:Due to the attractive optical and electrical properties, van der Waals (vdWs) heterostructures constructed from the different two-dimensional materials have received widespread attention. Here, MoS2/h-BN, MoS2/graphene, WS2/h-BN, and WS2/graphene vdWs heterostructures are successfully prepared by the CVD and wet transfer methods. The distribution, Raman and photoluminescence (PL) spectra of the above prepared heterostructure samples can be respectively observed and tested by optical microscopy and Raman spectrometry, which can be used to study their growth mechanisms and optical properties. Meanwhile, the uniformity and composition distribution of heterostructure films can also be analyzed by the Raman and PL spectra. The internal mechanism of Raman and PL spectral changes can be explained by comparing and analyzing the PL and Raman spectra of the junction and non-junction regions between 2D-2D vdWs heterostructure materials, and the effect of laser power on the optical properties of heterostructure materials can also be analyzed. These heterostructure materials exhibit novel and unique optical characteristics at the stacking or junction, which can provide a reliable experimental basis for the preparation of suitable TMDs heterostructure materials with excellent performance.
Hybrid van der Waals heterojunction based on two-dimensional materials

Cuicui Sun,Meili Qi

DOI: https://doi.org/10.1088/1742-6596/2109/1/012012

2021-11-01

Journal of Physics: Conference Series

Abstract:Abstract Since the discovery of graphene, two-dimensional (2D) layered materials have always been the focus of material research. The layers of 2D materials are covalent bonds, and the layers are weakly bonded to adjacent layers through van der Waals (vdW) interactions. Since any dangling-bond-free surface could be combined with another material through vdW forces, the concept can be extended. This can refer to the integration of 2D materials with any other non-2D materials through non-covalent interactions. The emerging mixed-dimensional (2D+nD, where n is 0, 1 or 3) heterostructure devices has been studied and represents a wider range of vdW heterostructures. New electronic devices and optoelectronic devices based on such heterojunctions have unique functions. Therefore, this article depicts the research progress of (2D+nD, where n is 0, 1 or 3) vdW heterojunctions based on 2D materials.
Tunable electronic properties and band alignments of MoSi$_2$N$_4$/GaN and MoSi$_2$N$_4$/ZnO van der Waals heterostructures

Jin Quan Ng,Qingyun Wu,L. K. Ang,Yee Sin Ang

DOI: https://doi.org/10.48550/arXiv.2112.14526

2021-12-29

Materials Science

Abstract:Van de Waals heterostructures (VDWH) is an emerging strategy to engineer the electronic properties of two-dimensional (2D) material systems. Motivated by the recent discovery of MoSi$_2$N$_4$ - a synthetic septuple-layered 2D semiconductor with exceptional mechanical and electronic properties, we investigate the synergy of \ce{MoSi2N4} with wide band gap (WBG) 2D monolayers of GaN and ZnO using first-principle calculations. We find that MoSi$_2$N$_4$/GaN is a direct band gap Type-I VDWH while MoSi$_2$N$_4$/ZnO is an indirect band gap Type-II VDWH. Intriguingly, by applying an electric field or mechanical strain along the out-of-plane direction, the band structures of MoSi$_2$N$_4$/GaN and MoSi$_2$N$_4$/ZnO can be substantially modified, exhibiting rich transitional behaviors, such as the Type-I-to-Type-II band alignment and the direct-to-indirect band gap transitions. These findings reveal the potentials of MoSi$_2$N$_4$-based WBG VDWH as a tunable hybrid materials with enormous design flexibility in ultracompact optoelectronic applications.
Electronic, optical and transport properties of van der Waals Transition-metal Dichalcogenides Heterostructures: A First-principle Study

Ke Xu,Yuanfeng Xu,Hao Zhang,Bo Peng,Hezhu Shao,Gang Ni,Jing Li,Mingyuan Yao,Hongliang Lu,Heyuan Zhu,Costas M. Soukoulis

DOI: https://doi.org/10.1039/C8CP05522J

2018-04-07

Abstract:Two-dimensional (2D) transition-metal dichalcogenide (TMD) MX$_2$ (M = Mo, W; X= S, Se, Te) possess unique properties and novel applications. In this work, we perform first-principles calculations on the van der Waals (vdW) stacked MX$_2$ heterostructures to investigate their electronic, optical and transport properties systematically. We perform the so-called Anderson's rule to classify the heterostructures by providing the scheme of the construction of energy band diagrams for the heterostructure consisting of two semiconductor materials. For most of the MX$_2$ heterostructures, the conduction band maximum (CBM) and valence band minimum (VBM) reside in two separate semiconductors, forming type II band structure, thus the electron-holes pairs are spatially separated. We also find strong interlayer coupling at $\Gamma$ point after forming MX$_2$ heterostructures, even leading to the indirect band gap. While the band structure near $K$ point remain as the independent monolayer. The carrier mobilities of MX$_2$ heterostructures depend on three decisive factors, elastic modulus, effective mass and deformation potential constant, which are discussed and contrasted with those of monolayer MX$_2$, respectively.

Materials Science,Mesoscale and Nanoscale Physics
Tunable Band Alignment and Optical Properties in Van Der Waals Heterostructures Based on Two-Dimensional Materials Janus-MoSSe and C3N4

Shida Pei,Rufeng Cao,Yan-Hong Zhou,Xiaohong Zheng,Caiyun Wang

DOI: https://doi.org/10.1088/1367-2630/ad3c65

2024-01-01

New Journal of Physics

Abstract:Van der Waals heterostructures with tunable band alignments are the promising candidates for the fabrication of high-performance multifunctional nano-optoelectronic devices. In this work, we investigate the band alignments and optical properties of two-dimensional MoSSe/C _3 N _4 and C _3 N _4 /MoSSe heterostructures using first-principles methods. The two most stable MoSSe/C _3 N _4 (C _3 N _4 -Se) and C _3 N _4 /MoSSe (C _3 N _4 -S) heterostructures (labeled as A2 and B2, respectively) out of the twelve possible heterostructures are selected for the corresponding properties research. It is found that the A2 exhibits type-I band alignment, making it suitable for light-emitting applications, while the B2 exhibits typical type-II band alignment, which is favorable for carrier separation. Moreover, the band alignment of the two heterostructures can be modulated by the external electric fields, that is, band alignment transition between type-I and type-II. In addition, the main absorption peaks of both heterostructures in their pristine state are located in the visible light region (approximately 2.9 eV), and the peak values of the absorption peaks can be enhanced (weaken) via applying positive (negative) external electric fields. Our findings demonstrate that the C _3 N _4 /C _3 N _4 and C _3 N _4 /MoSSe heterostructures hold significant potential for applications in multifunctional electronic devices including light-emitting, carrier separation, optical modulators, etc.
Interfacial Stress Transfer and Fracture in van der Waals Heterostructures

Zheling Li,Mufeng Liu,Pankaj Kumar,Zhenghua Chang,Guocheng Qi,Pei He,Yujie Wei,Robert J. Young,Kostya S. Novoselov

DOI: https://doi.org/10.1002/adma.202411244

IF: 29.4

2024-10-03

Advanced Materials

Abstract:The interfacial stress transfer and fracture of a MoS2/graphene vdW heterostructure are studied, through the lateral and vertical strain distributions in the vdW heterostructure revealed in‐situ. This leads to the interfacial shear strength and interfacial fracture energy being estimated, and a failure criterion proposes to predict the failure mechanisms of similar vdW heterostructures with any lateral dimensions. Artificially stacking 2D materials (2DMs) into vdW heterostructures creates materials with properties not present in nature that offer great potential for various applications such as flexible electronics. Properties of such stacked structures are controlled largely by the interfacial interactions and the structural integrity of the 2DMs. In spite of their crucial roles, interfacial stress transfer and the failure mechanisms of the vdW heterostructures, particularly during deformation, have not been well addressed so far. In this work, the interfacial stress transfer and failure mechanisms of a MoS2/graphene vdW heterostructure are studied, through the strain distributions both laterally in individual 2DMs and vertically across different 2DMs revealed in‐situ. The fracture of the MoS2 and the associated states of stress and strain are monitored experimentally. This enables various interfacial properties, such as the interfacial shear strength and interfacial fracture energy, to be estimated. Based only on the measured strength and interfacial properties of a single vdW heterostructure, a failure criterion is proposed to predict the failure mechanisms of similar vdW heterostructures with any lateral dimensions. This work provides an insight to the deformation micromechanics of vdW heterostructures that are of great value for their miniaturization and applications, especially in flexible electronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Optical and tuning electronic properties of GeC/MoS2 van der Waals heterostructures by electric field and strain: A first-principles study

Fei Yang,Zhenguo Zhuo,Junnan Han,Xincheng Cao,Yue Tao,Le Zhang,Wenjin Liu,Ziyue Zhu,Yuehua Dai

DOI: https://doi.org/10.1016/j.spmi.2021.106935

IF: 3.22

2021-08-01

Superlattices and Microstructures

Abstract:Heterostructures have attracted significant attention because of their interlayer van der Waals interactions, in this work, six stacking models of GeC/MoS2 heterostructure were constructed, the AB stacking model has the lowest energy and the most stable interlayer spacing between GeC and MoS2 is 3.81 Å. Based on First-principles calculations, we explored the structural, electronic and optical properties of GeC/MoS2 heterostructure and its response to electric field and biaxial strain. The results show that built-in electric field formed at the GeC/MoS2 interface, which effectively separated photo-generated electrons and holes. Meantime, the absorption of GeC/MoS2 located at ∼200nm was enhanced compared with monolayers. When the electric field strength increased from -0.7 V/Å to 0.65 V/Å, the band gap value of GeC/MoS2 heterostructure increased from 0eV to 1.21eV linearly, then decreased continuously to 0eV with the electric field strength increasing from 0.65 V/Å to 0.8 V/Å. Lastly, with the biaxial strain increasing from -6% to 5%, the gap value of GeC/MoS2 heterostructure increased slowly from 0 eV to 1.19eV, then decreased rapidly to 0 eV when the biaxial strain increased from 5% to 8%, the transitions of direct-to-indirect band gap and N-to-P type characteristic occurred when biaxial strain was 3% and -2% respectively. Results show that the GeC/MoS2 heterostructure has application prospects in ultraviolet, nanoelectronic, and pressure sensitive devices.

physics, condensed matter
Two-Dimensional Electron Gas in MoSi2N4/VSi2N4 Heterojunction by First Principles Calculation

Ruiling Gao,Chao Liu,Le Fang,Bixia Yao,Wei Wu,Qiling Xiao,Shunbo Hu,Yu Liu,Heng Gao,Shixun Cao,Guangsheng Song,Xiangjian Meng,Xiaoshuang Chen,Wei Ren

DOI: https://doi.org/10.1088/0256-307X/39/12/127301

2022-01-01

Chinese Physics Letters

Abstract:Van der Waals (vdW) layered two-dimensional (2D) materials, which may have high carrier mobility, valley polarization, excellent mechanical properties and air stability, have been widely investigated before. We explore the possibility of producing a spin-polarized two-dimensional electron gas (2DEG) in the heterojunction composed of insulators MoSi2N4 and VSi2N4 by using first-principles calculations. Due to the charge transfer effect, the 2DEG at the interface of the MoSi2N4/VSi2N4 heterojunction is found. Further, for different kinds of stacking of heterojunctions, lattice strain and electric fields can effectively tune the electronic structures and lead to metal-to-semiconductor transition. Under compressive strain or electric field parallel to c axis, the 2DEG disappears and band gap opening occurs. On the contrary, interlayer electron transfer enforces the system to become metallic under the condition of tensile strain or electric field anti-parallel to c axis. These changes are mainly attributed to electronic redistribution and orbitals' reconstruction. In addition, we reveal that MoSi2N4/VSi2N4 lateral heterojunctions of armchair and zigzag edges exhibit different electronic properties, such as a large band gap semiconductor and a metallic state. Our findings provide insights into electronic band engineering of MoSi2N4/VSi2N4 heterojunctions and pave the way for future spintronics applications.
Electronically Coupled 2D Polymer/MoS 2 Heterostructures

Halleh B. Balch,Austin M. Evans,Raghunath R. Dasari,Hong Li,Ruofan Li,Simil Thomas,Danqing Wang,Ryan P. Bisbey,Kaitlin Slicker,Ioannina Castano,Sangni Xun,Lili Jiang,Chenhui Zhu,Nathan Gianneschi,Daniel C. Ralph,Jean-Luc Brédas,Seth R. Marder,William R. Dichtel,Feng Wang,Jean-Luc Brédas

DOI: https://doi.org/10.1021/jacs.0c10151

IF: 15

2020-12-07

Journal of the American Chemical Society

Abstract:Emergent quantum phenomena in electronically coupled two-dimensional heterostructures are central to next-generation optical, electronic, and quantum information applications. Tailoring electronic band gaps in coupled heterostructures would permit control of such phenomena and is the subject of significant research interest. Two-dimensional polymers (2DPs) offer a compelling route to tailored band structures through the selection of molecular constituents. However, despite the promise of synthetic flexibility and electronic design, fabrication of 2DPs that form electronically coupled 2D heterostructures remains an outstanding challenge. Here, we report the rational design and optimized synthesis of electronically coupled semiconducting 2DP/2D transition metal dichalcogenide van der Waals heterostructures, demonstrate direct exfoliation of the highly crystalline and oriented 2DP films down to a few nanometers, and present the first thickness-dependent study of 2DP/MoS2 heterostructures. Control over the 2DP layers reveals enhancement of the 2DP photoluminescence by two orders of magnitude in ultrathin sheets and an unexpected thickness-dependent modulation of the ultrafast excited state dynamics in the 2DP/MoS2 heterostructure. These results provide fundamental insight into the electronic structure of 2DPs and present a route to tune emergent quantum phenomena in 2DP hybrid van der Waals heterostructures.

chemistry, multidisciplinary
Electric Field Effects on the Electronic Structures of MoS2/antimonene Van Der Waals Heterostructure

Li Wei,Yaqiang Ma,Xiaolong Wang

DOI: https://doi.org/10.1016/j.ssc.2019.02.002

IF: 1.934

2019-01-01

Solid State Communications

Abstract:Van der Waals (vdW) heterostructure is attaching intensive attention as an unique building block in the construction of future nano-devices. In this work, the MoS2/antimonene vdW heterostructure has been investigated by the first-principles calculations, considering stacking patterns and external electric fields (Eext) effects. It is demonstrated that the MoS2/antimonene heterobilayers possess a type-II band alignment and an indirect band gap of 0.92 eV. Furthermore, the Eext can induce the semiconductor–metal transition of the MoS2/antimonene heterostructure. Interestingly, the band alignment transition from type-II to type-I can be also tuned using the strength and direction of Eext. Our study would open a new avenue for application of ultrathin MoS2/antimonene heterojunction in future nano- and optoelectronics.
Electronic Properties of MTe2/AsI3(M=Mo and W) Van Der Waals Heterostructures

Zixiang Liu,Zhiguo Wang

DOI: https://doi.org/10.1051/matecconf/202338001011

2023-01-01

MATEC Web of Conferences

Abstract:Two dimensional (2D) materials with unique physical or chemical prperties has triggered worldwide interest in the fields of material science, condensed matter physics, and devices physics. Vertically stacking different 2D materials enables the creation of a large variety of van der Waals heterostructures. The van der Waals heterostructures robust the merits of the 2D materials electronic prperties. Using density functional theory calculations, the electronic structure of MTe2/AsI3(M=Mo and W) Van der Waals heterostructures are investigated in this work. The results show by stacking MTe2(M=Mo and W) and AsI3 vertically, a strongly binding vdW heterostructure with a type-II band alignment can be formed, which gives expectation of high multifunctional electronic performance. This theoretical study provides vital insights of 2D materials and their heterostructures which could be potential candidates for future nanoelectronic applications.
Tunable electronic properties and optoelectronic characteristics of MoGe2N4 /SiC van der Waals heterostructure

Ning Yang,Hui Li,Guogang Liu,Yang Yu,Lin Huang,Zhonghui Xu,Xianbo Xiao,Tong Chen

DOI: https://doi.org/10.1088/1361-648x/ad2389

2024-01-30

Journal of Physics Condensed Matter

Abstract:The assembly of van der Waals (vdw) heterostructure with easily regulated electronic properties provides a new way for the expansion of two-dimentional (2D) materials and promotes the development of optoelectronics, sensors, switching devices and other fields. In this work, a systematic investigation of the electronic properties of MoGe2N4/SiC heterostructures using density functional theory (DFT) has been conducted, along with the modulation of electronic properties by vertical strain and the potential application prospects in optoelectronic devices. The results show that MoGe2N4/SiC heterostructure has excellent dynamic and thermal stability and belongs to type-II band alignment semiconductors. This is extremely beneficial for the separation of photo-generating electron-hole pairs, so it has important significance for the development of photovoltaic materials. In addition, under the control of vertical strain, the semiconductor-metal transition occurs in the MoGe2N4/SiC heterostructure when the compressive strain reaches 6%. In the case of compressive strain less than 6% and tensile strain, the MoGe2N4/SiC heterostructure maintains the type-II band alignment semiconductor characteristics. Meanwhile, we find that the MoGe2N4/SiC heterostructure has optical absorption coefficients of up to 105 in the visible and ultraviolet light ranges, which can improve the absorption coefficients of the MoGe2N4 and SiC monolayer in some visible light regions. Finally, the optical conductivity of the MoGe2N4/SiC heterostructure exhibits significant anisotropy, with the armchair direction displaying higher conductivity within the orange light range. In conclusion, the formation of vdW heterostructure by vertically stacking MoGe2N4 and SiC monolayers can effectively improve their electronic and optical properties, which provides a valuable reference for the future development of electronic devices and photovoltaic materials.

physics, condensed matter
Two-dimensional electron gas in MoSi2N4/VSi2N4 heterojunction from first principles

Ruiling Gao,Chao Liu,Le Fang,Bixia Yao,Wei Wu,Qiling Xiao,Shunbo Hu,Yu Liu,Heng Gao,Shixun Cao,Guangsheng Song,Xiangjian Meng,Xiaoshuang Chen,Wei Ren

DOI: https://doi.org/10.1088/0256-307x/39/12/127301

2022-01-01

Chinese Physics Letters

Abstract:Abstract The van der Waals (vdW) layered two-dimensional (2D) materials, which might have high carrier mobility, valley polarization, excellent mechanical properties and air stability, have been widely investigated for years. In this work, we explored the possibility of producing spin-polarized two-dimensional electron gas (2DEG) in the heterojunction composed of insulators MoSi2N4 and VSi2N4 by using first-principles calculations. Due to the charge transfer effect, a 2DEG at the interface of the MoSi2N4/VSi2N4 heterojunction is found. Further, for different stacking of heterojunctions, lattice strain and electric fields can effectively tune the electronic structures and lead to the transition of metal-to-semiconductor. Under compressive strain or electric field parallel to c axis, 2DEG disappears and band gap opening occurs. On the contrary, interlayer electron transfer enforces the system to become metallic under the condition of tensile strain or electric field anti-parallel to c axis. These changes are mainly attributed to the electronic redistribution and orbitals’ reconstruction. In addition, we reveal that MoSi2N4/VSi2N4 lateral heterojunctions of armchair and zigzag edges exhibit different electronic properties, such as a large band gap semiconductor and a metallic state, respectively. Our findings provide insights into the electronic band engineering of MoSi2N4/VSi2N4 heterojunctions and pave the way for the future spintronics applications.

A two-dimensional MoS<sub>2</sub>/C<sub>3</sub>N broken-gap heterostructure, a first principles study

A Two-Dimensional MoS2/C3N Broken-Gap Heterostructure, a First Principles Study

A van der Waals pn heterojunction with organic/inorganic semiconductors

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Geometric, electronic, and optical properties of MoS 2 /WSSe van der Waals heterojunctions: a first-principles study

First-principles study of two-dimensional van der Waals heterojunctions

Effect of Vertical Strain and In-Plane Biaxial Strain on Type-Ii MoSi2N4/Cs3Bi2I9 Van Der Waals Heterostructure

Tunable Band-Structures of MSe2/C3N (M = Mo and W) Van Der Waals Heterojunctions

Synthesis and Spectral Characteristics Investigation of the 2D-2D vdWs Heterostructure Materials

Hybrid van der Waals heterojunction based on two-dimensional materials

Tunable electronic properties and band alignments of MoSi$_2$N$_4$/GaN and MoSi$_2$N$_4$/ZnO van der Waals heterostructures

Electronic, optical and transport properties of van der Waals Transition-metal Dichalcogenides Heterostructures: A First-principle Study

Tunable Band Alignment and Optical Properties in Van Der Waals Heterostructures Based on Two-Dimensional Materials Janus-MoSSe and C3N4

Interfacial Stress Transfer and Fracture in van der Waals Heterostructures

Optical and tuning electronic properties of GeC/MoS2 van der Waals heterostructures by electric field and strain: A first-principles study

Two-Dimensional Electron Gas in MoSi2N4/VSi2N4 Heterojunction by First Principles Calculation

Electronically Coupled 2D Polymer/MoS 2 Heterostructures

Electric Field Effects on the Electronic Structures of MoS2/antimonene Van Der Waals Heterostructure

Electronic Properties of MTe2/AsI3(M=Mo and W) Van Der Waals Heterostructures

Tunable electronic properties and optoelectronic characteristics of MoGe2N4 /SiC van der Waals heterostructure

Two-dimensional electron gas in MoSi<sub>2</sub>N<sub>4</sub>/VSi<sub>2</sub>N<sub>4</sub> heterojunction from first principles