Abstract:Dielectric materials have drawn increasing attention due to their high power density and fast charge-discharge speed. Although satisfactory energy storage performance has been achieved in lead-based ceramics, the exploration of suitable lead-free substitutions is highly desired since the rising environmental concerns caused by lead-based compounds. Herein, we demonstrate that a giant recoverable energy density of 7.01 J cm−3 together with high energy efficiency under 476 kV cm−1, as well as impressive frequency stability (maximum variation < ±3% at 1−100 Hz) and thermal stability (maximum variation < ±10% over 25−120°C) under 320 kV/cm, can be obtained in Lanthanum (La)-modified AgNbO3 ceramics. It is revealed that the long-range antiferroelectric order in AgNbO3 is interrupted by the incorporation of La, resulting in the transformation of micron-scale antiferroelectric domains into antiferroelectric nanodomains with concurrently improved energy density and efficiency. Additionally, the introduction of La content greatly suppresses the ferrielectricity of AgNbO3 and enhances the dielectric breakdown strength up to 494 kV cm−1 versus 178 kV cm−1 for the pure AgNbO3 ceramics. These results not only reveal the high potential of La-modified AgNbO3 ceramics for energy storage applications but also open up a feasible approach of domain engineering to develop new lead-free energy-storage dielectric materials.

Aliovalent A-site engineered AgNbO<sub>3</sub> lead-free antiferroelectric ceramics toward superior energy storage density

Aliovalent A-site engineered AgNbO3 lead-free antiferroelectric ceramics toward superior energy storage density

Correction: Aliovalent A-site engineered AgNbO<sub>3</sub> lead-free antiferroelectric ceramics toward superior energy storage density

Correction: Aliovalent A-site engineered AgNbO3 lead-free antiferroelectric ceramics toward superior energy storage density

High energy density in Ag0.5Na0.5(Nb1-xTax)O3 antiferroelectric ceramics

Aliovalent A-site engineered AgNbO₃ lead-free antiferroelectric ceramics toward superior energy storage density [Erratum:June 2019, v.7(25), p.15450]

Mechanism of enhanced energy storage density in AgNbO3-based lead-free antiferroelectrics

High energy storage density in AgNbO3-based lead-free antiferroelectrics using A/B-site co-doping strategy

Ultrahigh energy-storage density in A-/B-site co-doped AgNbO3 lead-free antiferroelectric ceramics: insight into the origin of antiferroelectricity

Silver Niobate Lead-Free Antiferroelectric Ceramics: Enhancing Energy Storage Density by B-Site Doping.

Lead‐free Ag1−3xLaxNbO3 antiferroelectric ceramics with high‐energy storage density and efficiency

High energy-storage performance of lead-free AgNbO3 antiferroelectric ceramics fabricated via a facile approach

Lead-free AgNbO<sub>3</sub> anti-ferroelectric ceramics with an enhanced energy storage performance using MnO<sub>2</sub> modification

Structure and Energy Storage Performance of Ba-modified AgNbO3 Lead-Free Antiferroelectric Ceramics

Giant energy density and high efficiency achieved in silver niobate-based lead-free antiferroelectric ceramic capacitors via domain engineering

Effect of Lu Doping on the Structure, Electrical Properties and Energy Storage Performance of AgNbO3 Antiferroelectric Ceramics

The energy storage performance of Sm3+ and Hf4+ co-doped AgNbO3 lead-free antiferroelectric ceramic

Energy Storage Properties in Nd-doped AgNbTaO3 Lead-Free Antiferroelectric Ceramics with Nb-site Vacancies

Silver Stoichiometry Engineering: an Alternative Way to Improve Energy Storage Density of AgNbO3-based Antiferroelectric Ceramics

Lead-Free Agnbo3 Anti-Ferroelectric Ceramics With An Enhanced Energy Storage Performance Using Mno2 Modification

Excellent Energy Storage Performance of Nd-Modified Lead-free AgNbO3 Ceramics Via Triple Collaborative Optimization