Highly Uniform Unipolar Resistive Switching Realized by Constructing More Cone-Like Conducting Filaments for Memory and Logic Applications

Shuang Gao,Gang Liu,Run-Wei Li

DOI: https://doi.org/10.1364/isst.2017.isu3b.2

2017-01-01

Abstract:Highly uniform unipolar resistive switching has been obtained by constructing more cone-like conducting filaments via interface optimization and demonstrated very promising for logic-in-memory application.

What problem does this paper attempt to address?

Improving Unipolar Resistive Switching Uniformity with Cone-Shaped Conducting Filaments and Its Logic-In-Memory Application

Shuang Gao,Gang Liu,Qilai Chen,Wuhong Xue,Huali Yang,Jie Shang,Bin Chen,Fei Zeng,Cheng Song,Feng Pan,Run-Wei Li

DOI: https://doi.org/10.1021/acsami.7b19586

IF: 9.5

2018-01-01

ACS Applied Materials & Interfaces

Abstract:Resistive random access memory (RRAM) with inherent logic-in-memory capability exhibits great potential to construct beyond von-Neumann computers. Particularly, unipolar RRAM is more promising because its single polarity operation enables large-scale crossbar logic-in-memory circuits with the highest integration density and simpler peripheral control circuits. However, unipolar RRAM usually exhibits poor switching uniformity because of random activation of conducting filaments and consequently cannot meet the strict uniformity requirement for logic-in-memory application. In this contribution, a new methodology that constructs cone-shaped conducting filaments by using chemically a active metal cathode is proposed to improve unipolar switching uniformity. Such a peculiar metal cathode will react spontaneously with the oxide switching layer to form an interfacial layer, which together with the metal cathode itself can act as a load resistor to prevent the overgrowth of conducting filaments and thus make them more cone like. In this way, the rupture of conducting filaments can be strictly limited to the tip region, making their residual parts favorable locations for subsequent filament growth and thus suppressing their random regeneration. As such, a novel "one switch + one unipolar RRAM cell" hybrid structure is capable to realize all 16 Boolean logic functions for large-scale logic-in-memory circuits.
Controlled Construction of Atomic Point Contact with 16 Quantized Conductance States in Oxide Resistive Switching Memory

Qilai Chen,Gang Liu,Wuhong Xue,Jie Shang,Shuang Gao,Xiaohui Yi,Ying Lu,Xinhui Chen,Minghua Tang,Xuejun Zheng,Run-Wei Li

DOI: https://doi.org/10.1021/acsaelm.9b00191

IF: 4.494

2019-01-01

ACS Applied Electronic Materials

Abstract:A resistive switching device with controlled formation and evolution of conductive filament possesses great capability of being miniaturized to atomic scale for the construction of high-density memory arrays and even in-memory computing architectures. Although the switching mechanism based on ion migration and electrochemistry has been clarified, precise control of the evolution dynamics is still a challenge that hinders the direct application of the memory devices. In this contribution, we propose an effective scanning probe microscope tip-assisted approach for the performance modulation of oxide-based resistive switching devices. The directional migration of oxygen anions inside the hafnium oxide nanofilm is regulated by using the voltage-biased scanning probe microscope (SPM) tip as a microelectrode, so that a single filament would be formed deliberately inside the switching matrix to greatly improve the stability and reliability of the memory device. The variations of the switching parameters, e.g. programming voltages and ON/OFF resistances, have been reduced by at least 33%. More importantly, the elaborate tuning of the filament dimension also gives rise to single atomic point contact in the resistive switching device, producing at least 16 half-integer multiples of quantized conductance states that can be used for multilevel data storage and high-order neuromorphic computing paradigm.
Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory

Kuan-Chang Chang,Tianjiao Dai,Lei Li,Xinnan Lin,Shengdong Zhang,Ying-Chih Lai,Heng-Jui Liu,Yong-En Syu

DOI: https://doi.org/10.1039/d0nr05900e

IF: 6.7

2020-01-01

Nanoscale

Abstract:Considerable efforts have been made to obtain better control of the switching behavior of resistive random access memory (RRAM) devices, such as using modified or multilayer switching materials. Although considerable progress has been made, the reliability and stability of the devices greatly deteriorate due to dispersed electric field caused by low permittivity surrounding materials. By introducing surrounding materials with a relatively higher dielectric constant, the RRAM devices become promising for cost-effective applications by achieving multilevel storage functionality and improved scalability. A device designed by this principle exhibits multiple distinct and non-volatile conductance states. Moreover, the issue of the increasing forming voltage during device scaling is also solved, improving the capacity of the chips and reducing the power dissipation in the process of the device miniaturization. The COMSOL simulation helps to reveal that the enhanced performance is correlated with a more concentrated electric field around the conductive filament, which is favorable for controlling the connection and rupture of the resistive filament.
Controllable Organic Resistive Switching Achieved by One-Step Integration of Cone-Shaped Contact

Haifeng Ling,Mingdong Yi,Masaru Nagai,Linghai Xie,Laiyuan Wang,Bo Hu,Wei Huang

DOI: https://doi.org/10.1002/adma.201701333

IF: 29.4

2017-01-01

Advanced Materials

Abstract:Conductive filaments (CFs)-based resistive random access memory possesses the ability of scaling down to sub-nanoscale with high-density integration architecture, making it the most promising nanoelectronic technology for reclaiming Moore's law. Compared with the extensive study in inorganic switching medium, the scientific challenge now is to understand the growth kinetics of nanoscale CFs in organic polymers, aiming to achieve controllable switching characteristics toward flexible and reliable nonvolatile organic memory. Here, this paper systematically investigates the resistive switching (RS) behaviors based on a widely adopted vertical architecture of Al/organic/indium-tin-oxide (ITO), with poly(9-vinylcarbazole) as the case study. A nanoscale Al filament with a dynamic-gap zone (DGZ) is directly observed using in situ scanning transmission electron microscopy (STEM) , which demonstrates that the RS behaviors are related to the random formation of spliced filaments consisting of Al and oxygen vacancy dual conductive channels growing through carbazole groups. The randomicity of the filament formation can be depressed by introducing a cone-shaped contact via a one-step integration method. The conical electrode can effectively shorten the DGZ and enhance the localized electric field, thus reducing the switching voltage and improving the RS uniformity. This study provides a deeper insight of the multiple filamentary mechanisms for organic RS effect.
Controllable Filament With Electric Field Engineering for Resistive Switching Uniformity

Qingqing Sun,JingJing Gu,Lin Chen,Peng Zhou,Pengfei Wang,Shijin Ding,Davidwei Zhang

DOI: https://doi.org/10.1109/LED.2011.2159770

2011-01-01

Abstract:Variations in SET and RESET voltages during resistive switching cause problems for transition-metal-oxide-based resistive memory applications. The random circuit breaker network model has illustrated that the random formation and rupture of conducting filaments result in this instability. A solution consisting of a carefully designed electric field redistribution is proposed to minimize these variations. This switching behavior occurs in an ultrathin Al2O3 film very near to the anode rather than occurring in a random distribution over a large region. The SET voltage distribution is narrowed by a factor of seven, and consequently, the RESET voltage distribution is confined near a fixed value.
Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials

Yu Li,Shibing Long,Qi Liu,Hangbing Lv,Ming Liu

DOI: https://doi.org/10.1002/smll.201604306

IF: 13.3

2017-01-01

Small

Abstract:Reversible chemical and structural changes induced by ionic motion and reaction in response to electrical stimuli leads to resistive switching effects in metal-insulator-metal structures. Filamentary switching based on the formation and rupture of nanoscale conductive filament has been applied in non-volatile memory and volatile selector devices with low power consumption and fast switching speeds. Before the mass production of resistive switching devices, great efforts are still required to enable stable and reliable switching performances. The conductive filament, a bridge of microscopic metal-insulator-metal structure and macroscopic resistance states, plays an irreplaceable part in resistive switching behavior, as unreliable performance often originates from unstable filament behavior. In this Review, departing from the filamentary switching mechanism and the existing issues, recent advances of the switching performance improvement through the conductive filament modulation are discussed, in the sequence of material modulation, device structure design and switching operation scheme optimization. In particular, two-dimensional (2D) nanomaterials with excellent properties including and beyond graphene, are discussed with emphasis on performance improvement by their active roles as the switching layer, insertion layer, thin electrode, patterned electrode, and edge electrode, etc.
Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

Y. M. Sun,C. Song,J. Yin,L. L. Qiao,R. Wang,Z. Y. Wang,X. Z. Chen,S. Q. Yin,M. S. Saleem,H. Q. Wu,F. Zeng,F. Pan

DOI: https://doi.org/10.1063/1.5098382

IF: 4

2019-01-01

Applied Physics Letters

Abstract:Large fluctuations of key parameters in cation-based resistive random access memory (RRAM), which originate from stochastic growth of metallic conductive filaments, always impose a significant barrier to the practical application of memory devices. Here, we propose an ordinary bilayer oxide structure of Ag/TaOx/TaOy/Pt (x < y) to address this issue and achieve the performance enhancement of memory cells. This memory device is inclined to form nano-cone-shaped filaments under external bias, and the tips of filaments provide an electric field concentration, achieving an effective control of filament growth. Compared with the single-layer device Ag/TaOx/Pt, the bilayer device manifests a larger ON/OFF ratio, much lower operation voltages and RESET currents, a higher response speed, and better uniformity. The insertion of the oxygen-rich layer also brings about the tunability of switching voltages and the elimination of the negative-SET phenomenon. Our experiments might pave the way for high-density emerging memory commercial applications.
Reconfigurable Logic in Nanosecond Cu/GeTe/TiN Filamentary Memristors for Energy-Efficient In-Memory Computing

Miao-Miao Jin,Long Cheng,Yi Li,Si-Yu Hu,Ke Lu,Jia Chen,Nian Duan,Zhuo-Rui Wang,Ya-Xiong Zhou,Chang,Xiang-Shui Miao

DOI: https://doi.org/10.1088/1361-6528/aacf84

IF: 3.5

2018-01-01

Nanotechnology

Abstract:Owing to the capability of integrating the information storage and computing in the same physical location, in-memory computing with memristors has become a research hotspot as a promising route for non von Neumann architecture. However, it is still a challenge to develop high performance devices as well as optimized logic methodologies to realize energy-efficient computing. Herein, filamentary Cu/GeTe/TiN memristor is reported to show satisfactory properties with nanosecond switching speed (<60 ns), low voltage operation (<2 V), high endurance (>10(4) cycles) and good retention (>10(4) s @85 degrees C). It is revealed that the charge carrier conduction mechanisms in high resistance and low resistance states are Schottky emission and hopping transport between the adjacent Cu clusters, respectively, based on the analysis of current-voltage behaviors and resistance-temperature characteristics. An intuitive picture is given to describe the dynamic processes of resistive switching. Moreover, based on the basic material implication (IMP) logic circuit, we proposed a reconfigurable logic method and experimentally implemented IMP, NOT, OR, and COPY logic functions. Design of a one-bit full adder with reduction in computational sequences and its validation in simulation further demonstrate the potential practical application. The results provide important progress towards understanding of resistive switching mechanism and realization of energy-efficient in-memory computing architecture.
A Comprehensive Simulation Study on Metal Conducting Filament Formation in Resistive Switching Memories

Feng Pan,Shong Yin,Subramanian, Vivek

DOI: https://doi.org/10.1109/imw.2011.5873222

2011-01-01

Abstract:The conducting metal filament formation process of a typical resistive switching memory is comprehensively studied using Kinetic Monte Carlo simulation, which includes multiple physical and chemical mechanisms. The characteristics of the forming voltage, forming time and the so called "Voltage-time dilemma" are investigated. In addition filament topographies, which strongly influence device properties, are studied under different device operation conditions. Simulated I-V characteristics are determined and illustrated. Further, studies on filament overgrowth and on-state resistance are presented. Finally, the influence of the size of the device on the forming voltage is simulated.
Filamentation Mechanism of Resistive Switching in Fully Silicided High- $\kappa$ Gate Stacks

Nagarajan Raghavan,Wenhu Liu,Xiang Li,Xing Wu,Michel Bosman,Kin Leong Pey

DOI: https://doi.org/10.1109/led.2011.2107495

IF: 4.8157

2011-01-01

IEEE Electron Device Letters

Abstract:We study the mechanism of filamentation in resistive switching (RS) memory from an electrical perspective using a conventional metal-insulator-semiconductor (MIS) high-κ metal gate transistor test structure and propose the possibility of using the same transistor structure for both logic and RS memory applications. The filament location is measured after every SET transition, and our investigations point to a “pseudorandom” nature of filament nucleation. Migration of highly diffusive nickel from source/drain silicide contacts toward the active silicon channel region transforms the existing MIS stack to MIM, thereby enabling the RS phenomenon.
Recent Advances in Resistive Switching Materials and Devices: from Memories to Memristors

Gang Liu,Yu Chen,Shuang Gao,Bin Zhang,Run-Wei Li,Xiaodong Zhuang

DOI: https://doi.org/10.30919/es8d779

2018-01-01

Engineered Science

Abstract:Resistive switching devices have not only been considered as an emerging candidate for the next generation information storage technology, but also demonstrated great potential for in-memory computing systems with greatly enhanced computation capability.This review focuses on the recent advances in resistive materials and devices.We first describe the electric field-induced filamentary conduction model that accounts for the resistive switching behavior observed in inorganic materials, as well as the novel electric field-engineering strategy that is used to optimize the device structure and the memory performance.The alternative ways of using organic and hybrid materials to construct resistive switching devices are then illustrated.By tuning the charge transfer interaction and solid state electrochemical redox properties in small molecules, polymer, metal-organic framework and organic-inorganic hybrid perovskite materials, bistable and multibit memories, as well as the biomimicking memristors have been fabricated.Finally, we discuss the future development of the resistive switching materials and devices, aiming to clarifying the key issues that hinders its practical applications.
Intrinsic Nanofilamentation in Resistive Switching

Xing Wu,Dongkyu Cha,Michel Bosman,Nagarajan Raghavan,Dmitri B. Migas,Victor E. Borisenko,Xi-Xiang Zhang,Kun Li,Kin-Leong Pey

DOI: https://doi.org/10.1063/1.4794519

IF: 2.877

2013-01-01

Journal of Applied Physics

Abstract:Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.
High-performance Resistive Switching Memory with Embedded Molybdenum Disulfide Quantum Dots

Xinna Yu,Ke Chang,Anhua Dong,Zhikai Gan,Kang'an Jiang,Yibin Ling,Yiru Niu,Diyuan Zheng,Xinyuan Dong,Renzhi Wang,Yizhen Li,Zhuyikang Zhao,Peng Bao,Binbin Liu,Yuhong Cao,Su Hu,Hui Wang

DOI: https://doi.org/10.1063/5.0039654

IF: 4

2021-01-01

Applied Physics Letters

Abstract:With the advent of the big-data era, conventional memory technologies and devices are facing enormous challenges. Resistive random access memory (RRAM) is an emerging memory technology that has aroused widespread interest for its immense potential. However, there remain some problems in resistive switching devices, such as high switching voltages, random voltages distribution, wide variation in resistance states, and poor endurance. In this work, molybdenum disulfide quantum dots are applied to resistive switching devices. The resulting devices exhibit improved performance. They have ultra-low and centralized switching voltages, uniformly distributed resistance states, good endurance, and extremely large on/off ratios. This performance optimization may derive from the convergence of electric field distribution around molybdenum disulfide quantum dots, which enhances the formation of localized conductive filaments. In this Letter, we propose an approach for improving resistive switching properties, significantly facilitating the development of data storage and related applications.
Controllable Formation of Resistive Switching Filaments by Low-Energy H+ Irradiation in Transition-Metal Oxides

Yu Zhang,Song-Lin Li,Jie Li,Hui Deng,Li-Min Cui,Dong-Ning Zheng

DOI: https://doi.org/10.1063/1.4738894

IF: 4

2012-01-01

Applied Physics Letters

Abstract:A concept is demonstrated to controllably form unipolar resistive filaments in pristine insulating oxides by a low-energy H+ irradiation via the ion bombarding effect and reactions in the oxides. In contrast to the conventional electroforming process in an uncontrollable way, our method well controls the density and distribution range of the switching filaments and largely reduces the probability of random occurrence of conducting channels. The memory devices prepared with our method are free of initial electroforming process and exhibit good switching performances. The ion irradiation proved an effective method to improve the performance of resistance random access memories.
Oxide Heterostructure Resistive Memory.

Yuchao Yang,ShinHyun Choi,Wei Lu

DOI: https://doi.org/10.1021/nl401287w

IF: 10.8

2013-01-01

Nano Letters

Abstract:Resistive switching devices are widely believed as a promising candidate for future memory and logic applications. Here we show that by using multilayer oxide heterostructures the switching characteristics can be systematically controlled, ranging from unipolar switching to complementary switching and bipolar switching with linear and nonlinear on-states and high endurance. Each layer can be tailed for a specific function during resistance switching, thus greatly improving the degree of control and flexibility for optimized device performance.
The Strategies Of Filament Control For Improving The Resistive Switching Performance

Teng Li,Hongliang Yu,Stephenie Hiu Yuet Chen,Ye Zhou,Su-Ting Han

DOI: https://doi.org/10.1039/d0tc03639k

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:With the rapid application of artificial intelligence in daily life and work, the traditional von Neumann architecture device faces the limitation of scalability and high energy consumption. These limitations can be overcome by in-memory computing based on analog resistance switch devices, but the resistive switching behavior depends on the formation and rupture of filaments with spatial and temporal variation. According to the filamentary switching mechanisms, conductive filaments play an irreplaceable role in the resistive switching process, and the stochastic filaments are the main cause of nonuniform performances and variation. Therefore, an efficient way to solve these problems is by controlling the filaments. In recent years, researchers have made many efforts to control the filaments, resulting in numerous feasible methods being invented. Herein, departing from the filamentary mechanisms, the strategies of filament control are discussed from the aspects of electrode optimization, switching layer optimization and channel design. Meanwhile, the challenges of promotion in device performance and application in neuromorphic computing and outlook for future research directions are also discussed.
Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

Bin Gao,Bing Sun,Haowei Zhang,Lifeng Liu,Xiaoyan Liu,Ruqi Han,Jinfeng Kang,Bin Yu

DOI: https://doi.org/10.1109/LED.2009.2032308

IF: 4.8157

2009-01-01

IEEE Electron Device Letters

Abstract:A unified model is proposed to elucidate the resistive switching behavior of metal-oxide-based resistive random access memory devices using the concept of electron hopping transport along filamentary conducting paths in dielectric layer. The transport calculation shows that a low-electron-occupied region along the conductive filament (CF) is formed when a critical electric field is applied. The ox...
Modulating the Filament Rupture Degree of Threshold Switching Device for Self-Selective and Low-Current Nonvolatile Memory Application

Xiaolong Zhao,Jiebin Niu,Yang,Xiangheng Xiao,Rui Chen,Zuheng Wu,Ying Zhang,Hangbing Lv,Shibing Long,Qi Liu,Changzhong Jiang,Ming Liu

DOI: https://doi.org/10.1088/1361-6528/ab647d

IF: 3.5

2020-01-01

Nanotechnology

Abstract:Resistive switching devices have tremendous potential for memory, logic, and neuromorphic computing applications. Cation-based resistive switching devices intrinsically show nonvolatile memory characteristics under high compliance current (I CC), while show volatile threshold switching (TS) selector characteristics under low I CC. However, separate researches about cation-based memory or selector are hard to evade the typical current-retention dilemma, which results in the hardship to obtain low-current memory and high-current selector. Here, we propose a novel strategy to realize nonvolatile storage characteristics in a volatile TS device by modulating the rupture degree of conductive filament (CF). Enlarging the rupture degree of the CF with a certain RESET process, as confirmed by transmission electron microscope and energy dispersive spectrometry results, the threshold voltage of the Ag/HfO2/Pt TS devices can be enlarged from 0.9 to 2.8 V. Generation of the voltage difference enables the volatile TS devices the ability of self-selective nonvolatile storage. Increasing the RESET magnitude and shrinking the device size have been proved effective ways to increase the read window of the TS memory (TSM) devices. Evading the limit of the current-retention dilemma, ultra-low energy dissipation can be obtained by decreasing I CC to nA level. With self-selective, low-energy, and potential high-density integration characteristics, the proposed TSM device can act as a potential supplement of novel storage class memories.
Multilevel Resistive Switching With Ionic And Metallic Filaments

Ming Liu,Zine Eddine Abid,Wei Wang,Xiaoli He,Qi Liu,Weihua Guan

DOI: https://doi.org/10.1063/1.3151822

IF: 4

2009-01-01

Applied Physics Letters

Abstract:The resistive random access memory (ReRAM) device with three distinguishable resistance states is fabricated by doping Cu into a portion of the ZrO2 oxide layer of the Ti/ZrO2/n(+)-Si structure. The temperature-dependent measurement results demonstrate that filaments due to ionic trap-controlled space charge limited current conduction and metallic bridge are formed at different voltages. The formation and rupture of these different conducting filamentary paths in parallel are suggested to be responsible for the multilevel switching with the large resistance ratio, which can be used to establish a reliable multilevel ReRAM solution with variation tolerance.
Resistive Switching: Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects (Adv. Mater. 14/2018)

Xiaolong Zhao,Jun Ma,Xiangheng Xiao,Qi Liu,Lin Shao,Di Chen,Sen Liu,Jiebin Niu,Xumeng Zhang,Yan Wang,Rongrong Cao,Wei Wang,Zengfeng Di,Hangbing Lv,Shibing Long,Ming Liu

DOI: https://doi.org/10.1002/adma.201870100

IF: 29.4

2018-01-01

Advanced Materials

Abstract:In article number 1705193, Qi Liu, Zengfeng Di, Ming Liu, and co-workers break the typical current-retention dilemma in cation-based resistive switching (RS) devices for the first time by centralizing/decentralizing the conductive-filament distribution to bidirectionally modulate the conductivefilament stability. Both a fast RS selector, with high on-state current, and low-power-dissipation memory are observed for a one selector-one resistor (1S1R) memory array, which is considered as the most possible practical application scheme for high-density 3D integration of resistiveswitching random access memory (RRAM).

Highly Uniform Unipolar Resistive Switching Realized by Constructing More Cone-Like Conducting Filaments for Memory and Logic Applications

Improving Unipolar Resistive Switching Uniformity with Cone-Shaped Conducting Filaments and Its Logic-In-Memory Application

Controlled Construction of Atomic Point Contact with 16 Quantized Conductance States in Oxide Resistive Switching Memory

Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory

Controllable Organic Resistive Switching Achieved by One-Step Integration of Cone-Shaped Contact

Controllable Filament With Electric Field Engineering for Resistive Switching Uniformity

Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

Reconfigurable Logic in Nanosecond Cu/GeTe/TiN Filamentary Memristors for Energy-Efficient In-Memory Computing

A Comprehensive Simulation Study on Metal Conducting Filament Formation in Resistive Switching Memories

Filamentation Mechanism of Resistive Switching in Fully Silicided High- $\kappa$ Gate Stacks

Recent Advances in Resistive Switching Materials and Devices: from Memories to Memristors

Intrinsic Nanofilamentation in Resistive Switching

High-performance Resistive Switching Memory with Embedded Molybdenum Disulfide Quantum Dots

Controllable Formation of Resistive Switching Filaments by Low-Energy H+ Irradiation in Transition-Metal Oxides

Oxide Heterostructure Resistive Memory.

The Strategies Of Filament Control For Improving The Resistive Switching Performance

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

Modulating the Filament Rupture Degree of Threshold Switching Device for Self-Selective and Low-Current Nonvolatile Memory Application

Multilevel Resistive Switching With Ionic And Metallic Filaments

Resistive Switching: Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects (Adv. Mater. 14/2018)