Abstract:Replicating the computational functionalities and performances of the brain remains one of the biggest challenges for the future of information and communication technologies. Such an ambitious goal requires research efforts from the architecture level to the basic device level (i.e., investigating the opportunities offered by emerging nanotechnologies to build such systems). Nanodevices, or, more precisely, memory or memristive devices, have been proposed for the implementation of synaptic functions, offering the required features and integration in a single component. In this paper, we demonstrate that the basic physics involved in the filamentary switching of electrochemical metallization cells can reproduce important biological synaptic functions that are key mechanisms for information processing and storage. The transition from short- to long-term plasticity has been reported as a direct consequence of filament growth (i.e., increased conductance) in filamentary memory devices. In this paper, we show that a more complex filament shape, such as dendritic paths of variable density and width, can permit the short- and long-term processes to be controlled independently. Our solid-state device is strongly analogous to biological synapses, as indicated by the interpretation of the results from the framework of a phenomenological model developed for biological synapses. We describe a single memristive element containing a rich panel of features, which will be of benefit to future neuromorphic hardware systems.

The Strategies Of Filament Control For Improving The Resistive Switching Performance

Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials

Controllable Filament With Electric Field Engineering for Resistive Switching Uniformity

A Comprehensive Simulation Study on Metal Conducting Filament Formation in Resistive Switching Memories

Progress in the Characterizations and Understanding of Conducting Filaments in Resistive Switching Devices

A carbon conductive filament-induced robust resistive switching behavior for brain-inspired computing

The filaments control for tunning digital resistive switching in data storage application and analog behavior as an artificial synapse with CsPbBr3-based memristor

Filamentary Switching: Synaptic Plasticity through Device Volatility

Nonvolatile Resistive Switching Memories-Characteristics, Mechanisms and Challenges

Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory

Filament-Free Bulk Resistive Memory Enables Deterministic Analogue Switching

Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory Via a Universal Monte Carlo Simulator

On the origin of filamentary resistive switching in oxides-based memristive devices

Observation of conducting filament growth in nanoscale resistive memories

Evolution of Conductive Filament and Its Impact on Reliability Issues in Oxide-Electrolyte Based Resistive Random Access Memory

Guiding the Growth of a Conductive Filament by Nanoindentation to Improve Resistive Switching

Improved uniformity in resistive switching behaviors based on PMMA films with embedded carbon quantum dots

Improving Unipolar Resistive Switching Uniformity with Cone-Shaped Conducting Filaments and Its Logic-In-Memory Application

Investigation on the mechanism and a universal structural design method for Resistive Switching devices

Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

Operando Direct Observation of Filament Formation in Resistive Switching Devices Enabled by a Topological Transformation Molecule